AS4C256M16D3L-12BCNTR - 4Gbit DDR3L SDRAM 96-FBGA | Alliance Memory
Teilenummer: AS4C256M16D3L-12BCNTR ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.1 | $710,00 |
| 500 | $6.5 | $3.250,00 |
| 1.000 | $6 | $6.000,00 |
AS4C256M16D3L-12BCNTR Übersicht
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a reduced supply voltage of 1.35V, compared to standard DDR3's 1.5V, reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 memory family, which uses double-data-rate signaling to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is widely used in mobile devices, embedded systems, and networking equipment where power efficiency is critical.
Key features include a parallel interface with 16-bit data bus, 800 MHz clock speed, 20 ns access time, and support for 1.283V to 1.45V supply voltage. The device is RoHS compliant and lead-free, meeting environmental standards. The 96-FBGA package with 9x13mm dimensions provides a compact footprint suitable for space-constrained PCB designs.
Technically, the AS4C256M16D3L-12BCNTR utilizes advanced DRAM process technology to achieve high density and low power. It supports burst lengths of 8 and 4, on-die termination (ODT), and programmable CAS latency. The device includes auto-refresh and self-refresh modes for power saving. The 1.35V operation reduces I/O power, making it ideal for battery-powered applications.
Typical applications include servers, workstations, networking equipment, and embedded systems requiring high-capacity, low-power memory. The 4Gbit density and 16-bit organization make it suitable for memory expansion in industrial PCs, routers, and test equipment.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and reference voltage (VREF) for reliable operation.
Drop-in-Alternativen für AS4C256M16D3L-12BCNTR – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit AS4C256M16D3L-12BCNTR (gleiche Bauform und Footprint) – abweichend in Package, Supply Voltage, Memory Type, Clock Frequency, Memory Size.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
AS4C256M16D3L-12BINTR
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
AS4C256M16D3L-12BCN
✅ Drop-In✓ Auf Lager
$6 / Stück
Datenblatt ansehen →MT41K256M16HA-125
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$6.3636 / Stück
Datenblatt ansehen →IS43TR16512BL-125K
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
K4B4G1646E-BYMA
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$14.3182 / Stück
Datenblatt ansehen →AS4C256M16D3L-12BCNTR Grenzwerte & elektrische Eigenschaften
| Speichertyp | SDRAM - DDR3L |
| Speichergröße | 4Gbit (256M x 16) |
| Schnittstelle | Parallel |
| Clock Frequency | 800 MHz |
| Access Time | 20 ns |
| Versorgungsspannung | 1.283V ~ 1.45V |
| Betriebstemperatur | 0°C to +95°C |
| Gehäuse | 96-FBGA (9x13mm) |
| Montageart | Surface Mount |
| Datenbusbreite | 16 bit |
| Speicherorganisation | 256M x 16 |
| RoHS-Status | Compliant |
| Lead-Free | Yes |
AS4C256M16D3L-12BCNTR Pin-Konfiguration
| Pin A1 | VDD — Power supply (1.35V) |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin A5 | DQ2 — Data input/output 2 |
| Pin A6 | DQ3 — Data input/output 3 |
| Pin A7 | VDD — Power supply (1.35V) |
| Pin A8 | DQ4 — Data input/output 4 |
| Pin A9 | DQ5 — Data input/output 5 |
| Pin A10 | VSS — Ground |
| Pin A11 | DQ6 — Data input/output 6 |
| Pin A12 | DQ7 — Data input/output 7 |
Typische Anwendungen
AS4C256M16D3L-12BCNTR ist geeignet für 6 Anwendungs: Networking Equipment, Embedded Systems, Servers and Workstations, Test and Measurement, Industrial Automation, Consumer Electronics.
Networking Equipment
The AS4C256M16D3L-12BCNTR provides high-density, low-power memory for routers, switches, and network appliances. Its 4Gbit capacity and 800 MHz clock speed support high-throughput packet processing and buffering. The 1.35V operation reduces power consumption in always-on network devices, while the 96-FBGA package fits compact line cards. The parallel interface simplifies integration with network processors and FPGAs, enabling efficient data transfer for routing tables and packet queues.
Empfohlen
Embedded Systems
This DDR3L SDRAM is ideal for embedded systems requiring large memory footprints, such as industrial PCs, medical devices, and point-of-sale terminals. The 4Gbit density supports complex operating systems and applications, while the 1.35V supply minimizes power dissipation in battery-backed or thermally constrained designs. The 16-bit data bus balances bandwidth and pin count, and the 96-FBGA package allows for compact PCB layouts. The commercial temperature range covers typical indoor environments, and the RoHS compliance meets environmental regulations.
Empfohlen
Servers and Workstations
The AS4C256M16D3L-12BCNTR is suitable for entry-level servers and workstations where high-capacity, low-power memory is needed. Its 4Gbit density and 800 MHz clock speed provide adequate bandwidth for virtualization, database caching, and compute-intensive tasks. The 1.35V operation reduces total system power, contributing to energy-efficient data centers. The parallel interface and 16-bit organization allow flexible memory channel configurations. The 96-FBGA package is standard for DDR3L modules, ensuring compatibility with existing PCB designs.
Empfohlen
Test and Measurement
In test and measurement equipment, the AS4C256M16D3L-12BCNTR provides high-speed data storage for waveform capture, signal analysis, and data logging. The 800 MHz clock and 20 ns access time enable fast data acquisition, while the 4Gbit capacity allows long recording durations. The low 1.35V supply reduces heat generation in benchtop instruments, and the 96-FBGA package fits compact module designs. The commercial temperature range is adequate for laboratory environments, and the RoHS compliance supports green initiatives.
Empfohlen
Industrial Automation
The AS4C256M16D3L-12BCNTR is used in industrial automation for PLCs, robotics, and HMI systems that require reliable, high-capacity memory. The 4Gbit density supports complex control algorithms and data logging, while the 1.35V operation reduces power consumption in 24V-powered systems. The 800 MHz clock speed ensures fast data access for real-time control loops. The 96-FBGA package is robust for industrial environments, and the commercial temperature range covers typical factory floor conditions. The RoHS compliance meets industrial environmental standards.
Empfohlen
Consumer Electronics
This DDR3L SDRAM is suitable for consumer electronics such as smart TVs, set-top boxes, and gaming consoles, where high bandwidth and low power are essential. The 4Gbit capacity supports multimedia streaming and gaming applications, while the 1.35V supply extends battery life in portable devices. The 800 MHz clock speed provides smooth video playback and responsive user interfaces. The 96-FBGA package enables slim device designs, and the commercial temperature range covers typical home use. The RoHS compliance meets consumer safety regulations.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für AS4C256M16D3L-12BCNTR – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | AS4C256M16D3L-12BINTR | AS4C256M16D3L-12BCN | AS4C256M16D3LC-12BCNTR | MT41K256M16HA-125 | IS43TR16512BL-125K | K4B4G1646E-BYMA |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA (9x13mm) | 96-FBGA (9x13mm) - same | 96-FBGA (9x13mm) - same | 96-FBGA (7.5x13.5mm) - different | 96-FBGA (9x13mm) - same | 96-FBGA (9x13mm) - same | 96-FBGA (9x13mm) - same |
| Brand | Alliance Memory | Alliance Memory | Alliance Memory | Alliance Memory | Micron Technology | ISSI | Samsung Electronics |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit | 4Gbit | 4Gbit | 4Gbit |
| Clock Frequency | 800 MHz | 800 MHz | 800 MHz | 800 MHz | 800 MHz | 800 MHz | 800 MHz |
| Supply Voltage | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 1.283V ~ 1.45V | 1.283V ~ 1.45V |
| Operating Temperature | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| Data Bus Width | 16 bit | 16 bit | 16 bit | 16 bit | 16 bit | 16 bit | 16 bit |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Wichtigste Unterscheidungsmerkmale
- Low-voltage operation at 1.35V (vs. Standard DDR3 at 1.5V)
- High-density 4Gbit in 96-FBGA (vs. AS4C256M16D3LC-12BCNTR (7.5x13.5mm))
- Drop-in replacement for standard DDR3L (vs. Cross-brand equivalents)
Designhinweise
Place 0.1uF decoupling capacitors close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the power entry. Follow the layout guidelines in the Alliance Memory datasheet to minimize trace lengths for DQ and address lines, ensuring signal integrity at 800 MHz.
The AS4C256M16D3L-12BCNTR operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 1.35V supply reduces power dissipation, but verify the thermal profile in your system.
Do not exceed the supply voltage range of 1.283V to 1.45V. Ensure the VREF voltage is properly generated and decoupled. Incorrect termination of address/control lines can cause data corruption. Refer to the datasheet for ODT settings.
Compliance-Informationen
RoHS compliant per distributor listings. Lead-free confirmed. Other compliance details not specified in provided data.
