BSD316SNH6327XTSA1 - 30V N-Ch 1.4A MOSFET | Infineon | SOT-363
Teilenummer: BSD316SNH6327XTSA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.42 | $0,42 |
| 10 | $0.36 | $3,60 |
| 100 | $0.24 | $24,00 |
| 500 | $0.18 | $90,00 |
| 1.000 | $0.14 | $140,00 |
| 3.000 | $0.11 | $330,00 |
BSD316SNH6327XTSA1 Übersicht
A small-signal N-channel MOSFET is a voltage-controlled field-effect transistor used for low-current switching, level shifting, and high-impedance analog signal routing. N-channel devices conduct between drain and source when a positive gate-to-source voltage is applied, offering lower on-resistance per unit die area than equivalent P-channel parts. Small-signal MOSFETs sit in the broader power-semiconductor taxonomy of N-channel MOSFET -> enhancement-mode MOSFET -> power MOSFET -> discrete semiconductor, and are typically used in signal paths up to a few amps rather than power conversion stages measured in tens of amps.
Key features include low on-state resistance, fast switching characteristics, and an ESD-protected gate structure typical of Infineon's Small Signal N-channel family. The SOT-363 (also called SC-88) outline is a 6-pin variant of the SOT-363 family that accommodates two independent MOSFETs in dual-source configurations, supporting high-density PCB layouts where board area is at a premium.
The BSD316SNH6327XTSA1 uses a planar DMOS cell structure with optimized gate-oxide design for low gate charge and fast turn-on/turn-off transitions. Its 1.4A continuous current rating is achieved in a 6-pin SOT-363 footprint with thermal resistance optimized for the package outline. AEC-Q101 qualification confirms reliability for automotive-grade applications across the full automotive temperature range.
Typical applications include load switching in automotive body electronics, signal multiplexing in industrial control, level shifters between microcontrollers and higher-voltage peripherals, and high-side or low-side drive stages for relays, LEDs, and small solenoids. The combination of SOT-363 footprint and 1.4A rating positions it for space-constrained designs that need more current than a SOT-23 MOSFET can deliver.
When designing with this device, observe the 500mW power dissipation limit at 25°C ambient and derate linearly for higher temperatures. A continuous ID of 1.4A requires the drain pad copper to be properly designed for heat extraction, and the gate drive voltage should exceed the threshold voltage with margin to ensure full enhancement under all operating conditions.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond the manufacturer datasheet's specification tables, giving procurement and engineering teams a single source for selection, comparison, and supply-chain risk evaluation.
Drop-in-Alternativen für BSD316SNH6327XTSA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit BSD316SNH6327XTSA1 (gleiche Bauform und Footprint) – abweichend in Package.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
BSS214NWH6327XTSA1
✅ Drop-In✓ Auf Lager
$0.15 / Stück
Datenblatt ansehen →BSD316SNH6327
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
BSD316SNH6327XTSA1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | Infineon Technologies |
| Product Family | Small Signal N-Channel MOSFET |
| Polarity | N-Channel |
| Drain-to-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 1.4 A (Ta) |
| Power Dissipation (PD) | 500 mW (Ta=25C) |
| Gehäuse | SOT-363 (PG-SOT363-PO), 6-pin |
| Montageart | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| Operating Mode | Enhancement-mode |
| Lead Plating | Pb-free (lead-free) |
| RoHS-Status | Compliant |
BSD316SNH6327XTSA1 Pin-Konfiguration
| Pin 1 | Source 1 — Source of MOSFET 1 |
| Pin 2 | Gate 1 — Gate of MOSFET 1 |
| Pin 3 | Drain 2 — Drain of MOSFET 2 |
| Pin 4 | Source 2 — Source of MOSFET 2 |
| Pin 5 | Gate 2 — Gate of MOSFET 2 |
| Pin 6 | Drain 1 — Drain of MOSFET 1 |
Sicherer Arbeitsbereich (SOT-363, Ta=25C)
Typische Anwendungen
BSD316SNH6327XTSA1 ist geeignet für 7 Anwendungs: Automotive Load Switching, Signal Multiplexing and Level Shifting, Battery-Powered Portable Devices, Industrial Control Interfaces, LED Driving and Backlight Control, DC-DC Converter Synchronous Rectification, Protection Circuit Reverse Polarity.
Automotive Load Switching
The BSD316SNH6327XTSA1 is well suited for automotive load-switching applications including LED drivers, relay coil drivers, and small solenoid control. Its 30V VDS rating comfortably covers 12V automotive rails plus load-dump transients up to 35V, while the 1.4A continuous current supports typical automotive loads like lamp filaments and small motors. AEC-Q101 qualification confirms the part withstands the -40C to +125C automotive temperature range. Placed in a high-side configuration between the 12V battery and the load, the MOSFET's low on-resistance minimizes power dissipation and thermal rise. Compared to a 2N7002 in SOT-23, the BSD316SNH6327XTSA1 in SOT-363 offers higher current capability in a similar footprint, making it the right choice for body-electronics modules where a SOT-23 part would be marginal.
Empfohlen
Signal Multiplexing and Level Shifting
The BSD316SNH6327XTSA1 enables signal multiplexing and logic-level translation between microcontrollers operating at 3.3V and 5V peripheral circuits. With its enhancement-mode N-channel architecture, the device passes low-level analog or digital signals when the gate is driven high and presents a high-impedance path when off. The SOT-363 footprint allows two such switches in a compact area, supporting analog mux designs for sensor front-ends. The 30V VDS rating also lets the same part switch higher-voltage rails used in industrial sensor interfaces. Compared to a bipolar transistor switch, the MOSFET's high input impedance eliminates base-current loading on the driving GPIO, and its fast switching enables MHz-range multiplexing without significant distortion.
Empfohlen
Battery-Powered Portable Devices
The BSD316SNH6327XTSA1 functions as a power-gating switch in battery-powered portable devices including wearables, IoT sensors, and handheld instruments. Its low gate charge and enhancement-mode behavior mean negligible quiescent current when off, preserving battery life across standby periods. The 1.4A continuous current supports peak loads from radio transceivers, displays, or sensor bursts. The SOT-363 footprint fits space-constrained designs where every square millimeter matters, and its 30V VDS rating provides ample margin above single-cell Li-ion and 5V USB rails. The Pb-free lead plating and RoHS compliance meet consumer electronics environmental requirements for global market access.
Empfohlen
Industrial Control Interfaces
The BSD316SNH6327XTSA1 supports industrial control interfaces including 24V PLC I/O modules, sensor signal conditioning, and isolated signal routing. Its 30V VDS handles 24V industrial bus rails with margin for inductive transients, and the 1.4A current drives opto-coupler LEDs, small relays, and indicator lamps. AEC-Q101 qualification adds thermal and humidity robustness beyond commercial-grade parts, suiting factory-floor and outdoor cabinet installations. Placed at the input of an optocoupler driver stage, the MOSFET translates 3.3V or 5V logic from the controller into 24V-domain switching. Compared to electromechanical relays, the solid-state switching delivers silent operation and >10 billion cycle lifetime without contact wear.
Empfohlen
LED Driving and Backlight Control
The BSD316SNH6327XTSA1 drives LED strings in automotive interior lighting, indicator panels, and small display backlights. With 1.4A continuous current, it directly drives multiple series-connected LEDs at currents from 20mA to several hundred mA per channel. The low on-resistance minimizes voltage drop and self-heating, preserving LED brightness and color accuracy over the full dimming range. PWM dimming at frequencies up to several kHz is supported by the fast switching characteristics. The SOT-363 footprint supports compact multi-channel LED driver PCBs where multiple MOSFETs sit within 10mm of each other. The 30V VDS rating covers 12V and 24V LED strings with substantial transient margin.
Empfohlen
DC-DC Converter Synchronous Rectification
The BSD316SNH6327XTSA1 can serve as the low-side synchronous rectifier in small buck converters up to 1.4A output. While not optimized as a power MOSFET, its low on-resistance and fast switching support switching frequencies up to several hundred kHz in point-of-load regulators. The 30V VDS rating covers common 5V, 12V, and 24V input rails. For higher-current or higher-voltage rails, a dedicated power MOSFET from Infineon's OptiMOS family is recommended, but the BSD316SNH6327XTSA1 fills the gap for low-power auxiliary rails in distributed power architectures.
Empfohlen
Protection Circuit Reverse Polarity
The BSD316SNH6327XTSA1 implements reverse-polarity protection in battery-powered and automotive systems. Placed in the high-side path with its body diode oriented to block reverse current, the MOSFET is fully enhanced during normal operation, providing a low-loss path with minimal voltage drop. During a reverse-polarity event, the gate is pulled below threshold and the part blocks the reverse current, protecting downstream circuitry. The 1.4A continuous current covers most portable device loads, and the 30V VDS rating tolerates typical automotive jump-start transients. Compared to a Schottky diode solution, the MOSFET reduces power dissipation by 80-90% in the high-current path.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für BSD316SNH6327XTSA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | BSS214NWH6327XTSA1 | BSD316SNH6327 |
|---|---|---|---|
| Package | SOT-363 (PG-SOT363-PO) | SOT-363 - same | SOT-363 - same |
| Brand | Infineon | Infineon | Infineon |
| Polarity | N-Channel | N-Channel | N-Channel |
| VDS | 30 V | 20 V | 30 V |
| Continuous Drain Current (Ta) | 1.4 A | 1.5 A | 1.4 A |
| Power Dissipation | 500 mW | 500 mW | 500 mW |
| Automotive Grade | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Wichtigste Unterscheidungsmerkmale
- Higher continuous drain current in the SOT-363 family (vs. 2N7002 (SOT-23))
- AEC-Q101 automotive qualification included by default (vs. Commercial-grade SOT-363 N-channel MOSFETs)
- Pb-free lead plating and RoHS compliance (vs. Legacy SnPb-plated small-signal MOSFETs)
Designhinweise
At 1.4A continuous current, the BSD316SNH6327XTSA1 dissipates up to 500mW in the SOT-363 package, approaching the thermal limit at Ta=25C. The SOT-363 has a relatively high junction-to-ambient thermal resistance (typical theta_JA around 350-400 C/W on a 1 oz 1-inch-square copper pad), so the part must be derated for ambient temperatures above 25C. Estimated: at Ta=85C, the allowable continuous drain current drops to roughly 0.6A based on linear derating to the maximum junction temperature. For continuous loads above 0.7A, attach a small copper thermal pad under the source leads to lower theta_JA. If continuous operation above 1A is required, consider a larger-package MOSFET such as a SOT-223 device instead.
The SOT-363 footprint is small (2.0mm x 2.0mm) and requires careful PCB layout. Use a 1 oz copper pad with thermal vias to the bottom layer to spread heat from the source leads. Keep the gate trace short and away from the drain node to minimize capacitive coupling that could cause false turn-on during high dV/dt transitions. Solder paste should use a stencil aperture matching the SOT-363 land pattern with 0.1-0.15mm thickness for proper reflow without bridging the 0.65mm-pitch leads. According to the Infineon SOT-363 package mechanical drawing, the exposed source pad is on the bottom of the package and should be soldered to a copper pour on the top layer to maximize heat extraction.
Do not exceed the 30V VDS rating under any operating condition including inductive flyback transients from relay coils or motor windings - add a flyback diode or TVS clamp if the load is inductive. The gate threshold voltage is typically 1-2V; ensure the gate drive voltage is well above the maximum VGS(th) over temperature (use 4.5V or 10V VGS to guarantee full enhancement). Do not float the gate - even brief gate floating can cause partial turn-on and self-heating. For high-side switching, ensure the gate voltage is referenced to the source pin and can swing above VIN plus the gate-drive voltage if a PNP or charge-pump bootstrap is used.
Compliance-Informationen
AEC-Q101 qualified (automotive grade). RoHS compliant with Pb-free lead plating per Infineon product family datasheet. Halogen-free status and conflict-minerals compliance not explicitly stated in the provided web data.
