CSD17303Q5 - 30V N-Ch NexFET MOSFET 2.6mOhm | TI
Teilenummer: CSD17303Q5 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $2.45 | $2,45 |
| 10 | $2.2 | $22,00 |
| 100 | $2.09 | $209,00 |
| 500 | $1.88 | $940,00 |
| 1.000 | $1.65 | $1.650,00 |
CSD17303Q5 Übersicht
A power MOSFET is a voltage-controlled semiconductor switch used in the power management hierarchy above gate drivers and below controllers in DC-DC conversion systems. The CSD17303Q5 belongs to TI's NexFET family of optimized MOSFETs for high-efficiency switching power supplies.
Key features include optimization for 5V gate drive, ultra-low total gate charge (Qg) and gate-drain charge (Qgd) for fast, efficient switching, avalanche rating for ruggedness, and low thermal resistance enabled by the VSON-CLIP package with exposed clip-bonded pad. The Pb-free terminal plating is RoHS compliant and halogen free per TI datasheet.
The NexFET silicon process achieves a superior figure of merit (Rds(on) x Qg), reducing both conduction and switching losses. In synchronous buck converters the CSD17303Q5 is typically used as the control FET, where low Qgd minimizes switching transition losses, while its 2.6 mOhm Rds(on) keeps conduction losses low at high output currents. The 30V rating suits 12V and intermediate bus inputs with margin for transients.
Typical applications include notebook point-of-load converters and synchronous buck stages in networking, telecom, and computing systems. The -55C to +150C operating range supports demanding industrial environments.
Design tip: verify Vgs derating when driving below 5V, since Rds(on) rises at reduced gate voltage, and maximize copper area on the drain pad to exploit the low thermal resistance of the VSON-CLIP package. As of 2026-08-30, pricing starts around $2.09 at LCSC.
Drop-in-Alternativen für CSD17303Q5 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit CSD17303Q5 (gleiche Bauform und Footprint) – abweichend in Package, Power Dissipation (Ta).
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
CSD17306Q5A
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
CSD17322Q5A
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
CSD17301Q5
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
CSD18503Q5A
✅ Drop-In✓ Auf Lager
$0.85 / Stück
Datenblatt ansehen →CSD17575Q3
⚡ Gleiches Gehäuse📋 Referenzalternative (nicht im Katalog)
VBQA1302
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
CSD17303Q5 Grenzwerte & elektrische Eigenschaften
| Polarity | N-Channel |
| Vds Drain-Source Voltage | 30 V |
| Id Continuous Drain Current (Ta) | 32 A |
| Id Continuous Drain Current (Tc) | 100 A |
| Rds(on) On-Resistance | 2.6 mOhm |
| Power Dissipation (Ta) | 3.2 W |
| Gate Drive Optimization | 5 V |
| Avalanche Rated | Yes |
| Betriebstemperatur | -55C to +150C |
| Gehäuse | VSON-CLIP (DQH) 8-pin, 5x6 mm |
| Montageart | Surface Mount |
| Terminal Plating | Pb-free |
| RoHS-Status | Compliant |
| Halogenfrei | Yes |
| Technology | NexFET |
CSD17303Q5 Pin-Konfiguration
| Pin 1-3 | GATE — Gate terminal |
| Pin 4 | SOURCE — Source terminal / ground reference |
| Pin 5-8 | DRAIN (Exposed Clip Pad) — Drain connected via exposed clip-bonded pad for current conduction and heat dissipation |
Sicherer Arbeitsbereich (Vds vs Id)
Typische Anwendungen
CSD17303Q5 ist geeignet für 6 Anwendungs: Notebook Point-of-Load Conversion, Networking Switch Power Rails, Computing Server VRM, Industrial Motor and Load Switching, Battery-Powered Portable Devices, Telecom DC-DC Power Modules.
Notebook Point-of-Load Conversion
The CSD17303Q5 fits notebook point-of-load converters where board area is limited and efficiency directly affects battery life. Its 2.6 mOhm Rds(on) keeps conduction losses low at multi-ampere output currents, while ultra-low Qg and Qgd minimize switching losses at the high frequencies used in compact POL designs. Placed as the control FET in a synchronous buck stage driven at 5V gate level, it reduces transition losses compared to standard MOSFETs. The 5x6 mm VSON-CLIP footprint conserves PCB area in thin notebook layouts.
Empfohlen
Networking Switch Power Rails
Networking and telecom equipment uses 12V intermediate buses feeding point-of-load synchronous buck stages. The CSD17303Q5's 30V Vds rating provides transient headroom over 12V inputs, and its avalanche rating adds ruggedness against inductive spikes. With 2.6 mOhm Rds(on), conduction losses stay low at the high continuous currents typical of switch port power. Its low Qgd enables efficient switching at 300 kHz to 1 MHz, and the -55C to +150C range supports telecom environmental requirements.
Empfohlen
Computing Server VRM
In server and computing VRM applications, multiphase synchronous buck converters deliver over 100A to processors. The CSD17303Q5 serves as a control or rectifier FET per phase, where its NexFET figure of merit (Rds(on) x Qg) reduces both conduction and switching losses, directly improving VRM efficiency and thermal headroom. The clip-bonded VSON-CLIP pad gives low thermal resistance into the PCB copper, and the 100A (Tc) rating accommodates pulse and burst loads typical of server power profiles.
Empfohlen
Industrial Motor and Load Switching
The CSD17303Q5 works as a high-side or low-side switch for industrial loads such as relays, heaters, and small DC motors. Its 30V rating suits 12V and 24V industrial rails with transient margin, while avalanche ruggedness handles inductive load energy during turn-off. At 5V gate drive it interfaces directly with logic-level outputs or gate drivers. The 2.6 mOhm Rds(on) minimizes heat in continuous-duty switching, and the wide -55C to +150C operating range tolerates industrial enclosures.
Empfohlen
Battery-Powered Portable Devices
Portable and battery-powered systems benefit from the CSD17303Q5's low gate charge, which reduces gate-drive losses and improves light-load efficiency in power-path and load-switch circuits. Its 30V rating covers multi-cell battery stacks with margin, and the low Rds(on) of 2.6 mOhm minimizes voltage drop and power loss during high-current bursts. The compact 5x6 mm surface-mount package fits space-constrained handheld designs, and Pb-free RoHS-compliant plating supports consumer environmental compliance requirements.
Empfohlen
Telecom DC-DC Power Modules
Telecom power modules operating from -48V-derived intermediate buses use the CSD17303Q5 as a switching element in brick and module designs. Its high 100A (Tc) capability and low thermal resistance let designers push power density in module packages. The 30V rating covers 12V intermediate bus topologies, and the NexFET process's low Qgd supports the high switching frequencies needed to shrink magnetics. Halogen-free construction aligns with telecom environmental standards, and the wide temperature range suits outdoor plant equipment.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für CSD17303Q5 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | CSD17306Q5A | CSD17322Q5A | CSD17301Q5 | VBQA1302 |
|---|---|---|---|---|---|
| Package | VSON-CLIP (DQH) 5x6 mm | VSON-CLIP 5x6 mm - same | VSON-CLIP 5x6 mm - same | VSON-CLIP 5x6 mm - same | SON 5x6 mm - same |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Will Semiconductor (VBsemi) |
| Vds Rating | 30 V | 30 V | 30 V | 30 V | 30 V |
Wichtigste Unterscheidungsmerkmale
- Ultra-low Qgd minimizes switching loss (vs. CSD17301Q5)
- 5V gate drive optimization (vs. VBQA1302)
- Clip-bonded VSON-CLIP thermal package (vs. CSD17575Q3)
Designhinweise
The VSON-CLIP (DQH) package achieves low thermal resistance through a clip-bonded exposed drain pad. Route the drain to a top-layer copper pour with at least 1 square inch of copper and a 4x4 via array stitching to internal/ground planes. At 3.2W dissipation (Ta), insufficient copper will cause the junction to exceed the 150C maximum; compute theta-JA per your board stackup using the TI datasheet thermal table.
The 2.6 mOhm Rds(on) is specified at optimized 5V gate drive. If your controller drives the gate at 4.5V or lower, consult the Rds(on) vs Vgs curve in the TI datasheet and derate conduction loss calculations accordingly. In synchronous buck use as control FET, minimize gate loop inductance to exploit the low Qgd.
Place the gate driver within 10 mm of the GATE pins and use a dedicated low-impedance gate return to the SOURCE pin. Keep the drain power loop (input capacitor to drain pad) as small as possible to limit parasitic inductance and voltage ringing on the 30V rail. Refer to TI synchronous buck layout application notes for reference patterns.
Compliance-Informationen
Pb-free terminal plating, RoHS compliant, halogen free per TI datasheet. REACH and conflict minerals status not stated in provided data.
