CXDB4ABAM-MK - 8Gb LPDDR4X SDRAM 3733MHz | CXMT
Teilenummer: CXDB4ABAM-MK ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $32.7273 | $32,73 |
| 10 | $23.6364 | $236,36 |
| 100 | $20.9091 | $2.090,91 |
| 500 | $20 | $10.000,00 |
| 1.000 | $19.0909 | $19.090,90 |
CXDB4ABAM-MK Übersicht
LPDDR4X (Low Power Double Data Rate 4X) is a type of synchronous dynamic random-access memory (SDRAM) designed for mobile and embedded systems. It is an evolution of LPDDR4, offering higher data rates and lower power consumption through reduced I/O voltage (0.6V). LPDDR4X is part of the broader DRAM memory hierarchy, which includes DDR4, DDR5, and LPDDR5, and is specifically optimized for power-sensitive applications such as smartphones, tablets, and IoT devices.
Key features of the CXDB4ABAM-MK include a 3733 MHz data rate, 8Gb density, and support for dual-channel operation. The device operates from a 1.8V VDD1 and 1.1V VDD2 power supply, with a VDDQ of 0.6V for the I/O, reducing power consumption by up to 20% compared to LPDDR4. It supports various operating modes including active, standby, and deep power-down, enabling efficient power management. The package is RoHS compliant, meeting environmental standards.
The CXDB4ABAM-MK utilizes advanced process technology to achieve high speed and low power. It features on-die termination (ODT) for improved signal integrity and supports a 16n prefetch architecture, which enhances data throughput. The device includes a temperature-compensated self-refresh (TCSR) mechanism to maintain data integrity across a wide temperature range. The 200-ball FBGA package provides excellent thermal dissipation and is suitable for space-constrained designs.
Typical applications include smartphones, tablets, set-top boxes, and IoT devices. In smartphones, the high data rate enables smooth multitasking and immersive VR experiences. In set-top boxes, it supports high-definition video streaming and fast app loading. The low power consumption extends battery life in portable devices.
When designing with this device, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The device requires a stable power supply and careful PCB layout to maintain signal integrity at 3733 MHz. Refer to the datasheet for detailed layout guidelines.
Drop-in-Alternativen für CXDB4ABAM-MK – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
H5AN8G6NAFR-UHC
✓ Auf Lager
$5.7422 / Stück
Datenblatt ansehen →CXDB4ABAM
✓ Auf Lager
$19.0909 / Stück
Datenblatt ansehen →K4F8E304HB-MGCJ
✓ Auf Lager
$2.55 / Stück
Datenblatt ansehen →MT53B256M32D1NP-062
✓ Auf Lager
$8.9 / Stück
Datenblatt ansehen →NT6AN512M32AV-1G
✓ Auf Lager
$7.2 / Stück
Datenblatt ansehen →CXDB4ABAM-MK Grenzwerte & elektrische Eigenschaften
| Speichertyp | LPDDR4X SDRAM |
| Density | 8Gb |
| Datenrate | 3733 MHz |
| Gehäuse | BGA-200 (15x10x0.8 mm) |
| Supply Voltage (VDD1) | 1.8V |
| Supply Voltage (VDD2) | 1.1V |
| I/O Voltage (VDDQ) | 0.6V |
| RoHS | Compliant |
| Montageart | Surface Mount |
| Anzahl der Pins | 200 |
| Lead-Free | Yes |
CXDB4ABAM-MK Pin-Konfiguration
| Pin A1 | VDD1 — Core power supply 1.8V |
| Pin A2 | VSS — Ground |
| Pin B1 | DQ0 — Data I/O 0 |
| Pin B2 | DQ1 — Data I/O 1 |
| Pin C1 | VDD2 — Core power supply 1.1V |
| Pin C2 | VSSQ — I/O ground |
| Pin D1 | CK_t — Clock positive |
| Pin D2 | CK_c — Clock negative |
| Pin E1 | CS — Chip select |
| Pin E2 | CA0 — Command/Address 0 |
| Pin F1 | CA1 — Command/Address 1 |
| Pin F2 | CA2 — Command/Address 2 |
Typische Anwendungen
CXDB4ABAM-MK ist geeignet für 6 Anwendungs: Smartphones, Tablets, Set-Top Boxes, IoT Devices, VR Headsets, Automotive Infotainment.
Smartphones
The CXDB4ABAM-MK's 3733 MHz data rate and low power consumption enable smooth multitasking and immersive VR experiences in smartphones. Its 8Gb density supports high-resolution displays and demanding apps. The LPDDR4X interface reduces power draw, extending battery life. The compact BGA-200 package fits space-constrained phone designs.
Empfohlen
Tablets
Tablets require high memory bandwidth for video streaming and gaming. The CXDB4ABAM-MK delivers 3733 MHz speed and 8Gb capacity, ensuring smooth performance. Its low power consumption is critical for battery-powered tablets. The 200-ball FBGA package allows thin form factors. The device supports dual-channel operation for increased throughput.
Empfohlen
Set-Top Boxes
Set-top boxes need high-speed memory for HD video decoding and app loading. The CXDB4ABAM-MK's 3733 MHz data rate ensures fast data transfer. Its 8Gb density supports multiple streams. The low power consumption reduces heat generation. The BGA-200 package is suitable for compact set-top box designs.
Empfohlen
IoT Devices
IoT devices require low power and reliable memory. The CXDB4ABAM-MK's LPDDR4X interface minimizes power consumption, extending battery life. Its 3733 MHz speed supports real-time data processing. The 8Gb density provides ample storage for sensor data. The compact package is ideal for small IoT modules.
Empfohlen
VR Headsets
VR headsets demand high bandwidth and low latency. The CXDB4ABAM-MK's 3733 MHz data rate delivers the required throughput for immersive experiences. Its low power consumption is essential for battery-operated headsets. The 8Gb density supports high-resolution displays. The BGA-200 package enables compact headset designs.
Empfohlen
Automotive Infotainment
Automotive infotainment systems require reliable, high-speed memory. The CXDB4ABAM-MK's 3733 MHz speed supports navigation and multimedia. Its low power consumption reduces heat in the cabin. The 8Gb density handles multiple applications. The device's temperature-compensated self-refresh ensures data integrity in varying temperatures.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für CXDB4ABAM-MK – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | CXDB4ABAM | K4F8E304HB-MGCJ | H5AN8G6NAFR-UHC |
|---|---|---|---|---|
| Package | BGA-200 | BGA-200 | BGA-200 | BGA-200 |
| Brand | CXMT | CXMT | Samsung | SK Hynix |
| Density | 8Gb | 8Gb | 8Gb | 8Gb |
| I/O Voltage | 0.6V | 0.6V | 0.6V | 0.6V |
| Supply Voltage (VDD1) | 1.8V | 1.8V | 1.8V | 1.8V |
| Supply Voltage (VDD2) | 1.1V | 1.1V | 1.1V | 1.1V |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Wichtigste Unterscheidungsmerkmale
- 3733 MHz data rate (vs. CXDB4ABAM)
- Low power consumption (vs. K4F8E304HB-MGCJ)
- Cost-effective (vs. H5AN8G6NAFR-UHC)
Designhinweise
For high-speed LPDDR4X signals at 3733 MHz, maintain controlled impedance of 50 ohms for single-ended and 100 ohms differential for clock signals. Keep trace lengths matched within 0.1mm for data and address buses. Use ground planes beneath the memory to minimize noise.
Decouple VDD1 (1.8V) and VDD2 (1.1V) with 0.1uF and 1uF capacitors placed as close to the pins as possible. Use a 4.7uF bulk capacitor on the power rail. Ensure low-impedance power delivery to maintain signal integrity at high speeds.
The BGA-200 package has a thermal resistance that requires adequate PCB copper for heat dissipation. Provide thermal vias under the package to the ground plane. For high ambient temperature applications, consider airflow or a heatsink to keep junction temperature within limits.
Compliance-Informationen
RoHS compliant per JLCPCB listing. Other compliance data not available.
