CXDB4ABAM-MK - 8Gb LPDDR4X SDRAM 3733MHz | CXMT
Référence : CXDB4ABAM-MK ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $32.7273 | $32,73 |
| 10 | $23.6364 | $236,36 |
| 100 | $20.9091 | $2 090,91 |
| 500 | $20 | $10 000,00 |
| 1 000 | $19.0909 | $19 090,90 |
CXDB4ABAM-MK Présentation
LPDDR4X (Low Power Double Data Rate 4X) is a type of synchronous dynamic random-access memory (SDRAM) designed for mobile and embedded systems. It is an evolution of LPDDR4, offering higher data rates and lower power consumption through reduced I/O voltage (0.6V). LPDDR4X is part of the broader DRAM memory hierarchy, which includes DDR4, DDR5, and LPDDR5, and is specifically optimized for power-sensitive applications such as smartphones, tablets, and IoT devices.
Key features of the CXDB4ABAM-MK include a 3733 MHz data rate, 8Gb density, and support for dual-channel operation. The device operates from a 1.8V VDD1 and 1.1V VDD2 power supply, with a VDDQ of 0.6V for the I/O, reducing power consumption by up to 20% compared to LPDDR4. It supports various operating modes including active, standby, and deep power-down, enabling efficient power management. The package is RoHS compliant, meeting environmental standards.
The CXDB4ABAM-MK utilizes advanced process technology to achieve high speed and low power. It features on-die termination (ODT) for improved signal integrity and supports a 16n prefetch architecture, which enhances data throughput. The device includes a temperature-compensated self-refresh (TCSR) mechanism to maintain data integrity across a wide temperature range. The 200-ball FBGA package provides excellent thermal dissipation and is suitable for space-constrained designs.
Typical applications include smartphones, tablets, set-top boxes, and IoT devices. In smartphones, the high data rate enables smooth multitasking and immersive VR experiences. In set-top boxes, it supports high-definition video streaming and fast app loading. The low power consumption extends battery life in portable devices.
When designing with this device, ensure proper decoupling capacitors are placed near the power pins to minimize noise. The device requires a stable power supply and careful PCB layout to maintain signal integrity at 3733 MHz. Refer to the datasheet for detailed layout guidelines.
Alternatives de remplacement direct pour CXDB4ABAM-MK — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5AN8G6NAFR-UHC
✓ En stock
$5.7422 / unité
Voir la fiche technique →CXDB4ABAM
✓ En stock
$19.0909 / unité
Voir la fiche technique →K4F8E304HB-MGCJ
✓ En stock
$2.55 / unité
Voir la fiche technique →MT53B256M32D1NP-062
✓ En stock
$8.9 / unité
Voir la fiche technique →NT6AN512M32AV-1G
✓ En stock
$7.2 / unité
Voir la fiche technique →CXDB4ABAM-MK Valeurs maximales et caractéristiques électriques
| Type de mémoire | LPDDR4X SDRAM |
| Density | 8Gb |
| Débit de données | 3733 MHz |
| Boîtier | BGA-200 (15x10x0.8 mm) |
| Supply Voltage (VDD1) | 1.8V |
| Supply Voltage (VDD2) | 1.1V |
| I/O Voltage (VDDQ) | 0.6V |
| RoHS | Compliant |
| Type de montage | Surface Mount |
| Nombre de broches | 200 |
| Lead-Free | Yes |
Configuration des broches de CXDB4ABAM-MK
| Broche A1 | VDD1 — Core power supply 1.8V |
| Broche A2 | VSS — Ground |
| Broche B1 | DQ0 — Data I/O 0 |
| Broche B2 | DQ1 — Data I/O 1 |
| Broche C1 | VDD2 — Core power supply 1.1V |
| Broche C2 | VSSQ — I/O ground |
| Broche D1 | CK_t — Clock positive |
| Broche D2 | CK_c — Clock negative |
| Broche E1 | CS — Chip select |
| Broche E2 | CA0 — Command/Address 0 |
| Broche F1 | CA1 — Command/Address 1 |
| Broche F2 | CA2 — Command/Address 2 |
Applications typiques
CXDB4ABAM-MK convient pour 6 applications: Smartphones, Tablets, Set-Top Boxes, IoT Devices, VR Headsets, Automotive Infotainment.
Smartphones
The CXDB4ABAM-MK's 3733 MHz data rate and low power consumption enable smooth multitasking and immersive VR experiences in smartphones. Its 8Gb density supports high-resolution displays and demanding apps. The LPDDR4X interface reduces power draw, extending battery life. The compact BGA-200 package fits space-constrained phone designs.
Recommandé
Tablets
Tablets require high memory bandwidth for video streaming and gaming. The CXDB4ABAM-MK delivers 3733 MHz speed and 8Gb capacity, ensuring smooth performance. Its low power consumption is critical for battery-powered tablets. The 200-ball FBGA package allows thin form factors. The device supports dual-channel operation for increased throughput.
Recommandé
Set-Top Boxes
Set-top boxes need high-speed memory for HD video decoding and app loading. The CXDB4ABAM-MK's 3733 MHz data rate ensures fast data transfer. Its 8Gb density supports multiple streams. The low power consumption reduces heat generation. The BGA-200 package is suitable for compact set-top box designs.
Recommandé
IoT Devices
IoT devices require low power and reliable memory. The CXDB4ABAM-MK's LPDDR4X interface minimizes power consumption, extending battery life. Its 3733 MHz speed supports real-time data processing. The 8Gb density provides ample storage for sensor data. The compact package is ideal for small IoT modules.
Recommandé
VR Headsets
VR headsets demand high bandwidth and low latency. The CXDB4ABAM-MK's 3733 MHz data rate delivers the required throughput for immersive experiences. Its low power consumption is essential for battery-operated headsets. The 8Gb density supports high-resolution displays. The BGA-200 package enables compact headset designs.
Recommandé
Automotive Infotainment
Automotive infotainment systems require reliable, high-speed memory. The CXDB4ABAM-MK's 3733 MHz speed supports navigation and multimedia. Its low power consumption reduces heat in the cabin. The 8Gb density handles multiple applications. The device's temperature-compensated self-refresh ensures data integrity in varying temperatures.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour CXDB4ABAM-MK — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | CXDB4ABAM | K4F8E304HB-MGCJ | H5AN8G6NAFR-UHC |
|---|---|---|---|---|
| Package | BGA-200 | BGA-200 | BGA-200 | BGA-200 |
| Brand | CXMT | CXMT | Samsung | SK Hynix |
| Density | 8Gb | 8Gb | 8Gb | 8Gb |
| I/O Voltage | 0.6V | 0.6V | 0.6V | 0.6V |
| Supply Voltage (VDD1) | 1.8V | 1.8V | 1.8V | 1.8V |
| Supply Voltage (VDD2) | 1.1V | 1.1V | 1.1V | 1.1V |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Principaux différenciateurs
- 3733 MHz data rate (vs CXDB4ABAM)
- Low power consumption (vs K4F8E304HB-MGCJ)
- Cost-effective (vs H5AN8G6NAFR-UHC)
Notes de conception
For high-speed LPDDR4X signals at 3733 MHz, maintain controlled impedance of 50 ohms for single-ended and 100 ohms differential for clock signals. Keep trace lengths matched within 0.1mm for data and address buses. Use ground planes beneath the memory to minimize noise.
Decouple VDD1 (1.8V) and VDD2 (1.1V) with 0.1uF and 1uF capacitors placed as close to the pins as possible. Use a 4.7uF bulk capacitor on the power rail. Ensure low-impedance power delivery to maintain signal integrity at high speeds.
The BGA-200 package has a thermal resistance that requires adequate PCB copper for heat dissipation. Provide thermal vias under the package to the ground plane. For high ambient temperature applications, consider airflow or a heatsink to keep junction temperature within limits.
Informations de conformité
RoHS compliant per JLCPCB listing. Other compliance data not available.
