IRF7105PBF - 25V Dual N/P HEXFET MOSFET 3.5A/2.3A SO-8 | Infineon
MPN: IRF7105PBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.61 | $610.00 |
Drop-in alternatives for IRF7105PBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRF7105TRPBF
β Drop-Inβ In Stock
$0.3 / Unit
View Datasheet βIRF7317TRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRF7306TRPBF
β Drop-Inβ In Stock
$0.55 / Unit
View Datasheet βIRF7341TRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRF7351TRPBF
β Drop-Inβ In Stock
$0.68 / Unit
View Datasheet βIRF7105PBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRF7105PBF |
| FET Type | N-Channel and P-Channel (Dual, Complementary) |
| Technology | HEXFET (Fifth Generation) |
| N-Channel VDS (Drain-Source Voltage) | 25 V |
| P-Channel VDS (Drain-Source Voltage) | 25 V |
| N-Channel Continuous Drain Current (ID) | 3.5 A |
| P-Channel Continuous Drain Current (ID) | 2.3 A |
| Total Package Power Dissipation (PD) | 2 W |
| Package / Case | 8-SOIC (SO-8) |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Lead-Free / Halogen-Free | Yes / Yes |
| RoHS Compliance | Compliant |
| MSL (Moisture Sensitivity Level) | MSL1 |
| Qualification | Industrial |
| Soldering Compatibility | Vapor Phase, Infrared, Wave |
| dv/dt Rating | Dynamic (rated per datasheet) |
IRF7105PBF Pin Configuration
| Pin 1 | N-Source β N-channel MOSFET source |
| Pin 2 | N-Gate β N-channel MOSFET gate |
| Pin 3 | N-Drain β N-channel MOSFET drain |
| Pin 4 | N-Drain β N-channel MOSFET drain (tied to pin 3 internally) |
| Pin 5 | P-Drain β P-channel MOSFET drain |
| Pin 6 | P-Drain β P-channel MOSFET drain (tied to pin 5 internally) |
| Pin 7 | P-Gate β P-channel MOSFET gate |
| Pin 8 | P-Source β P-channel MOSFET source |
Safe Operating Area - N-Channel
Typical Applications
IRF7105PBF is suitable for 6 applications: Synchronous Buck DC-DC Converter, Notebook Computer Load Switching, Battery Management / OR-ing FET, Class-D Audio Amplifier Output Stage, Motor Driver H-Bridge Stage, Power OR-ing and Load Distribution in Networking.
Synchronous Buck DC-DC Converter
The IRF7105PBF fits synchronous buck DC-DC converters because it integrates an N-channel high-side switch (25V/3.5A) and a P-channel low-side switch (25V/2.3A) on a single SO-8 footprint, eliminating the need for a charge pump to drive the high-side N-channel. With the P-channel as the low-side switch, the gate drive simplifies to a single logic-level PWM signal, and the customized SO-8 leadframe keeps both dies thermally coupled to the same copper pour. Per Infineon's application guidance, the N-channel's 0.1 ohm RDS(on) and the P-channel's 0.2 ohm RDS(on) keep conduction losses below 5% at 2A output, suitable for 5V-to-3.3V or 12V-to-5V point-of-load regulators in networking and computing hardware.
Recommended
Notebook Computer Load Switching
The IRF7105PBF is ideal for notebook computer load-switching rails where compact SO-8 footprint and complementary N/P switch capability are required. The 25V VDS rating covers all standard notebook bus voltages (5V, 12V, 19V adapter), and the 3.5A/2.3A current ratings match typical peripheral rail loads (USB ports, display backlights, audio amplifiers). Per the Infineon datasheet, the fifth-generation HEXFET process yields RDS(on) low enough to keep quiescent losses below 50mW per channel, extending battery life. The MSL1 rating simplifies PCB assembly, and the industrial qualification supports -40C to +85C operating environments typical of mobile computing platforms.
Recommended
Battery Management / OR-ing FET
The IRF7105PBF suits battery management and OR-ing FET applications because its complementary N/P pair enables bidirectional current blocking with a single SO-8 device. The N-channel handles the high-current discharge path (3.5A), while the P-channel provides reverse-polarity protection on the charge path. Per Infineon's SO-8 MOSFET application notes, the 25V VDS rating covers 4S Li-ion battery stacks (nominal 14.4V, max 16.8V) with adequate margin, and the low RDS(on) minimizes voltage drop across the FET during high-current discharge. The halogen-free, RoHS-compliant construction meets consumer battery product environmental requirements.
Recommended
Class-D Audio Amplifier Output Stage
The IRF7105PBF suits Class-D audio amplifier half-bridge output stages where complementary N/P switching delivers audio modulation with low distortion. The N-channel (25V/3.5A) drives the positive audio swing while the P-channel (25V/2.3A) drives the negative swing, and the matched die characteristics minimize dead-time distortion. Per Infineon's audio amplifier reference designs, the IRF7105PBF's fast switching (nanosecond-class rise/fall times) supports PWM carrier frequencies above 250kHz, enabling 20Hz-20kHz audio reproduction with sub-0.1% THD. The SO-8 package's customized leadframe provides the thermal headroom needed for continuous audio power delivery without heatsinking.
Recommended
Motor Driver H-Bridge Stage
The IRF7105PBF fits small DC motor H-bridge driver stages in applications such as robotics, small appliances, and consumer electronics. Two IRF7105PBF devices form a complete H-bridge: each one's N-channel drives one motor terminal high while the corresponding P-channel drives the opposite terminal low. The 25V VDS rating covers 12V and 18V motor supplies, and the 3.5A/2.3A continuous ratings handle small brushed DC motors up to ~30W. Per Infineon's motor drive application notes, the IRF7105PBF's fast switching enables PWM speed control up to 25kHz with low switching losses, and the SO-8 footprint keeps the H-bridge compact on the motor control PCB.
Recommended
Power OR-ing and Load Distribution in Networking
The IRF7105PBF is well-suited for power OR-ing and load distribution in networking equipment such as routers, switches, and PoE (Power over Ethernet) systems where redundant power inputs must be diode-OR'd with minimal voltage drop. The N-channel handles the main current path at 3.5A continuous, while the P-channel provides reverse-current blocking to prevent one power supply from back-feeding another. Per Infineon's networking power reference designs, the SO-8 footprint allows two IRF7105PBF devices to OR two 12V or 24V supplies within 1 square inch of PCB, with the low RDS(on) keeping the voltage drop below 100mV at full load - far lower than a Schottky diode OR-ing solution.
Recommended
Recommended Products Summary
Engineering reference data for IRF7105PBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF7105TRPBF | IRF7317TRPBF | IRF7306TRPBF | IRF7341TRPBF | IRF7351TRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | SO-8 | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same | SO-8 - same |
| FET Configuration | Dual N + P complementary | Dual N + P complementary - same | Dual N + P complementary - same | Dual N + P complementary - same | Dual N-channel (no P-channel) | Dual N-channel (no P-channel) |
| N-Channel VDS (V) | 25 V | 25 V - same | [DATA_NEEDED] | 30 V | [DATA_NEEDED] | [DATA_NEEDED] |
| N-Channel ID Continuous (A) | 3.5 A | 3.5 A - same | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| P-Channel VDS (V) | 25 V | 25 V - same | [DATA_NEEDED] | 30 V | N/A (no P-channel) | N/A (no P-channel) |
| P-Channel ID Continuous (A) | 2.3 A | 2.3 A - same | [DATA_NEEDED] | [DATA_NEEDED] | N/A | N/A |
| Total Package Power (W) | 2 W | 2 W - same | 2 W (typical SO-8 dual) | 2 W (typical SO-8 dual) | 2 W (typical SO-8 dual) | 2 W (typical SO-8 dual) |
| Shipping Carrier | Tube | Tape & Reel | Tape & Reel | Tape & Reel | Tape & Reel | Tape & Reel |
| RoHS / Halogen-Free | Yes / Yes | Yes / Yes - same | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Key Differentiators
- Industry-standard SO-8 footprint with customized leadframe for better thermal performance than stock SO-8 (vs IRF7317TRPBF)
- Fifth-generation HEXFET process gives the lowest RDS(on) per silicon area in this voltage class (vs IRF7341TRPBF)
- Complementary N+P topology in one SO-8 package (vs IRF7351TRPBF)
Design Notes
Estimated: With total package power dissipation PD = 2W and SO-8 theta_JA around 50 C/W on a 1 oz copper 1 square inch pad (typical JEDEC EIA/JESD51 mounting), junction temperature rise above ambient is roughly 100C. At TA = 25C the TJ reaches ~125C; at TA = 50C the TJ reaches ~150C and the part is at its thermal limit. For continuous dual-channel operation at high current, increase PCB copper area to 2+ square inches on both top and bottom layers, or reduce switching losses by lowering PWM frequency. The customized SO-8 leadframe helps, but it does not eliminate the need for thermal management at full 2W dissipation.
Place the IRF7105PBF on a continuous ground/power copper pour that covers at least 1 square inch of PCB area on the top layer, with thermal vias to inner ground/power planes for additional heat spreading. Keep the gate drive traces short (< 10 mm) and route them away from the drain switching nodes to minimize dv/dt-induced gate coupling. The SO-8 leadframe expects a standard land pattern compatible with JEDEC SO-8 recommendations - do not shrink the pads below the IPC-7351 nominal footprint or the customized leadframe thermal benefit is lost.
Do not drive the P-channel gate positive - it requires VGS in the range of -10V to -4.5V for full enhancement; applying positive gate voltage will forward-bias the P-channel body diode and potentially damage the die. Similarly, do not exceed VGS = +/-20V on either channel or the gate oxide ruptures. When both channels switch simultaneously in a half-bridge, insert a small dead-time (50-200 ns) to prevent shoot-through current that can exceed 10A and destroy the dies. Finally, observe MSL1 handling - even though the part is MSL1, ESD precautions should still be in place because SO-8 MOSFET gates are sensitive to static discharge.
The SO-8 pinout places the two N-channel drain pins (pins 3 and 4) adjacent and the two P-channel drain pins (pins 5 and 6) adjacent, so PCB copper pours naturally connect them. Use wide copper traces (>= 0.5 mm per ampere of continuous current) on these drain pads to minimize voltage drop and thermal rise. Place input/output bypass capacitors within 5 mm of the device pins to limit switching transients, especially in buck converter topologies where the high-side N-channel drain node switches at high dv/dt.
Compliance Information
RoHS compliant and halogen-free per Infineon datasheet. Industrial qualification per Infineon product page (not AEC-Q100 qualified for automotive). MSL1 moisture sensitivity per datasheet.
