IRF7309TRPBF vs IRF7319TRPBF Vergleich
Detaillierter Direktvergleich von IRF7309TRPBF von Infineon und IRF7319TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF7309TRPBF | IRF7319TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,35 | $0,62 |
| Configuration | Dual N-Channel + P-Channel (Complementary) | N-Channel + P-Channel (complementary half-bridge) |
| Polarity | N+P | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (N-channel, TA=25C) | 4 A | — |
| Continuous Drain Current (P-channel, TA=25C) | 3 A | — |
| On-Resistance (N-channel, max) | 50 mOhm | — |
| On-Resistance (P-channel, max) | [DATA_NEEDED: RDS(on) P-channel value] | — |
| Power Dissipation (TA=25C) | 1.4 W | — |
| Technology | IR HEXFET Generation V | IR MOSFET / Fifth Generation HEXFET |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | [DATA_NEEDED: VGS(th) typ/min/max] |
| Betriebstemperaturbereich | -55C to +150C (TJ) | -55C to +150C (junction) |
| Gehäuse | 8-SO (SOIC-8) | — |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL-1 (unlimited floor life per JEDEC J-STD-020) | — |
| Lead-Free Status | Yes (TRPBF suffix = Pb-free) | — |
| RoHS-Status | Compliant | — |
| Packaging | Tape & Reel | Tape & Reel (TR suffix) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Product Type | — | Dual MOSFET Array (N-channel + P-channel) |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current N-channel (ID) | — | 6.5 A |
| Continuous Drain Current P-channel (ID) | — | 4.9 A |
| RDS(on) Max N-channel | — | 29 mOhm (per Infineon product page) |
| RDS(on) Max P-channel | — | [DATA_NEEDED: P-channel RDS(on) max] |
| Total Power Dissipation (PD) | — | 2 W |
| Thermal Resistance Junction-to-Ambient N-ch | — | 120 C/W (steady state) |
| Thermal Resistance Junction-to-Ambient P-ch | — | 110 C/W (steady state) |
| Package Type | — | 8-SOIC (SO-8) |
| Lead-Free / RoHS | — | Yes (PBF suffix = Pb-free) |