IRLTS6342TRPBF - 30V 8.3A N-Channel Logic-Level MOSFET | Infineon
Teilenummer: IRLTS6342TRPBF ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.42 | $0,42 |
| 10 | $0.36 | $3,60 |
| 100 | $0.28 | $28,00 |
| 500 | $0.22 | $110,00 |
| 1.000 | $0.19 | $190,00 |
| 3.000 | $0.16 | $480,00 |
IRLTS6342TRPBF Übersicht
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate terminal to control current flow between the drain and source terminals. Logic-level MOSFETs are a sub-category specifically optimized to fully turn on with gate drive voltages as low as 2.5 V, eliminating the need for a gate driver IC in low-voltage systems. In the broader taxonomy, the IRLTS6342 belongs to N-channel enhancement-mode MOSFETs, which sit within the discrete transistor family, the power semiconductor hierarchy, and ultimately the semiconductor device category.
Key features include a typical on-resistance that allows high-efficiency switching with minimal conduction loss, a low total gate charge of 11 nC at 4.5 V VGS that reduces driver losses, and an industry-standard TSOP-6 footprint that is multi-vendor compatible. The MSL1 moisture sensitivity rating and JEDEC qualification ensure robust manufacturability for consumer-grade products.
The IRLTS6342 employs a trench-based IR MOSFET cell structure that achieves a low figure-of-merit (RDS(on) x Qg), which translates directly into lower switching and conduction losses in high-frequency DC-DC converters and load-switch circuits. The device also features an intrinsic body diode, supporting use in synchronous rectification and freewheeling applications.
Typical applications include battery-operated DC motor inverters, low-side load switches in portable electronics, synchronous rectification in buck converters, battery protection circuits, and USB power management. Its logic-level gate makes it especially well-suited to direct connection to microcontrollers and battery cells.
When designing with this MOSFET, ensure the gate drive rise/fall times are adequate for the switching frequency, and account for SOA limits during linear-mode operation such as hot-swap or inrush limiting. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone.
Drop-in-Alternativen für IRLTS6342TRPBF – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IRLTS6342TRPBF
✅ Drop-In✓ Auf Lager
$0.16 / Stück
Datenblatt ansehen →IRLML6342TRPBF
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
IRLMS6802TRPBF
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
VB7322
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
DMG3415U-7
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
SI2302CDS-T1-GE3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IRLTS6342TRPBF Grenzwerte & elektrische Eigenschaften
| FET Type | N-Channel MOSFET |
| Technology | IR MOSFET (HEXFET) |
| Drain-to-Source Voltage (VDS) | 30 V |
| Gate-to-Source Voltage (VGS) | ±12 V (max) |
| Continuous Drain Current (ID) | 8.3 A (Ta) |
| On-Resistance (RDS(on)) max | 17.5 mOhm @ VGS = 4.5 V |
| On-Resistance (RDS(on)) | 22 mOhm @ VGS = 2.5 V |
| Total Gate Charge (Qg) | 11 nC @ VGS = 4.5 V |
| Gate Threshold Voltage (VGS(th)) | 1.1 V |
| Input Capacitance (Ciss) | 1.01 nF |
| Output Capacitance (Coss) | 96 pF |
| Reverse Transfer Capacitance (Crss) | 70 pF |
| Power Dissipation (PD) | 2 W (Ta) |
| Betriebstemperaturbereich | -55 C to +150 C |
| Gehäuse | TSOP-6 (Micro 6) |
| Montageart | Surface Mount |
| MSL-Level | MSL1 |
| Qualification | JEDEC, Consumer |
| RoHS-Status | Compliant (Pb-free, Br-free, Halogen-free) |
IRLTS6342TRPBF Pin-Konfiguration
| Pin 1 | Source — Source (internally connected to pin 3) |
| Pin 2 | Gate — Gate drive input (logic-level) |
| Pin 3 | Source — Source (internally connected to pin 1) |
| Pin 4 | Drain — Drain (internally connected to pins 5, 6) |
| Pin 5 | Drain — Drain (internally connected to pins 4, 6) |
| Pin 6 | Drain — Drain (internally connected to pins 4, 5) |
Sicherer Arbeitsbereich (DC, TA = 25 C)
Typische Anwendungen
IRLTS6342TRPBF ist geeignet für 6 Anwendungs: Battery-Operated DC Motor Inverter, Low-Side Load Switch in Portable Electronics, Synchronous Rectification in Buck Converters, Battery Protection Circuit (Low-Side FET), USB Power Management and VBUS Load Switch, LED Driver High-Side Switch (Low-Voltage).
Battery-Operated DC Motor Inverter
The IRLTS6342TRPBF is designed for low-voltage DC motor inverter circuits in battery-operated equipment such as cordless tools, small drones, and robotics. Its 30 V VDS rating comfortably exceeds the typical 8.4 V (2S Li-ion) or 12.6 V (3S Li-ion) battery bus with substantial transient headroom. The 17.5 mOhm RDS(on) at VGS = 4.5 V allows the device to switch up to 8.3 A continuously with low conduction loss, while the 11 nC total gate charge keeps driver losses low at PWM frequencies up to 100 kHz. Driven directly from a microcontroller's PWM output at 3.3 V, it enables bidirectional H-bridge topologies for brushed DC motors and half-bridge drives for brushless DC motors in compact form factors.
Empfohlen
Low-Side Load Switch in Portable Electronics
In portable and battery-powered devices, the IRLTS6342TRPBF serves as a low-side load switch to disconnect subsystems (GPS, BLE radio, sensors) during sleep mode to extend battery life. Its logic-level gate threshold of 1.1 V and full enhancement at 2.5 V VGS allows direct connection to a microcontroller GPIO without a separate gate driver IC. The 17.5 mOhm on-resistance minimizes voltage drop across the switch, preserving supply headroom for downstream regulators. The TSOP-6 package occupies less than 9 mm² of PCB area, critical for wearables and ultra-compact designs. Infineon's IR MOSFET technology ensures fast switching and robust avalanche capability for inrush events during load connection.
Empfohlen
Synchronous Rectification in Buck Converters
As the low-side synchronous rectifier in buck converters up to 8 A output, the IRLTS6342TRPBF replaces the conventional Schottky diode to achieve efficiencies above 95 percent. With a body diode and 30 V VDS rating, it handles the switching transitions in continuous-conduction-mode operation across 12 V input rails. The 96 pF output capacitance and 70 pF reverse-transfer capacitance reduce dead-time losses, while the 11 nC gate charge at 4.5 V VGS minimizes the energy required from the bootstrap driver. Designers pair it with a dedicated gate driver (e.g., UCC27211) or a controller with integrated low-side driver for sub-100 ns switching transitions.
Empfohlen
Battery Protection Circuit (Low-Side FET)
The IRLTS6342TRPBF is used as the low-side protection MOSFET in lithium-ion battery management systems (BMS) for single-cell or 2S packs, where its 30 V VDS rating provides ample margin over the maximum cell voltage. In a fault condition (overcurrent, short circuit, over-discharge), the gate is pulled to ground to disconnect the load. The logic-level gate allows the protection IC to drive the MOSFET directly without an intermediate driver stage. Its 8.3 A continuous rating handles the discharge currents of typical consumer electronics and small power tools. TSOP-6 packaging is ideal for the compact PCB layouts of battery packs and protection modules.
Empfohlen
USB Power Management and VBUS Load Switch
In USB Type-C and USB-PD applications, the IRLTS6342TRPBF acts as a VBUS load switch or ORing FET to manage power flow between multiple sources. Its 30 V VDS rating handles the 20 V maximum USB-PD voltage with adequate derating, while the 17.5 mOhm RDS(on) at VGS = 4.5 V keeps voltage drop below 50 mV at 3 A. The logic-level gate allows direct GPIO control from a USB Type-C port controller without an external driver. Combined with its fast switching speed, it supports the hot-swap transients required during source-sink role swaps in DRP (dual-role port) applications.
Empfohlen
LED Driver High-Side Switch (Low-Voltage)
The IRLTS6342TRPBF functions as a high-side constant-current driver switch for LED strings in 12 V automotive interior lighting, decorative LED strips, and indicator panels. Operating as a saturated switch driven by a constant-current controller, its 17.5 mOhm RDS(on) provides headroom for current-sense resistors in the 100-500 mA range. The 30 V VDS rating handles inductive transients from the LED load, while its logic-level gate simplifies PWM dimming directly from a microcontroller. Its small TSOP-6 footprint enables high-density LED driver PCBs with minimal thermal impact at typical LED currents.
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Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IRLTS6342TRPBF – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IRLML6342TRPBF | IRLMS6802TRPBF | VB7322 | DMG3415U-7 | SI2302CDS-T1-GE3 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | VBsemi | Diodes Incorporated | Vishay Intertechnology |
| Package | TSOP-6 | TSOP-6 | TSOP-6 | SOT-23-6 | TSOP-6 | TSOP-6 |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 20 V | 30 V | 20 V | 20 V |
| Continuous Drain Current (ID) | 8.3 A | 5.7 A | 6.0 A | 8.0 A (typical) | 4.0 A | 2.6 A |
| Logic-Level Gate (2.5 V drive) | Yes | Yes | Yes | Yes | Yes | Yes |
Wichtigste Unterscheidungsmerkmale
- Higher continuous drain current than competing TSOP-6 logic-level MOSFETs (vs. DMG3415U-7 (Diodes Incorporated))
- 30 V VDS vs 20 V for typical TSOP-6 N-channel competitors (vs. SI2302CDS-T1-GE3 (Vishay))
- Lower on-resistance per area than P-channel equivalents (vs. BSS84 (Infineon, P-channel))
- Wider distributor availability with multi-vendor sourcing (vs. VB7322 (VBsemi, China))
Designhinweise
At ID = 8.3 A and RDS(on) = 17.5 mOhm, conduction loss is approximately 1.2 W (estimated: I² x RDS(on) = 8.3² x 0.0175). Combined with switching losses at typical 100 kHz operation, total power dissipation approaches the 2 W package limit. Use at least 100 mm² of PCB copper under the TSOP-6 drain tab to keep junction temperature rise below 50 C. For continuous operation above 5 A, consider active cooling or a larger package such as SO-8.
The TSOP-6 drain pins (4, 5, 6) are internally bonded and serve as the primary thermal path to the PCB. Use a continuous top-layer copper pour connected to the drain, with multiple thermal vias to inner layers for heat spreading. According to Infineon's TSOP-6 footprint recommendations, a 30 mm² copper pad yields approximately 75 C/W thermal resistance. Place the gate drive trace away from drain switching nodes to minimize dv/dt-induced false triggering.
Do not exceed the maximum VGS rating of ±12 V, even momentarily - gate oxide rupture destroys the device. Add a 10 kOhm gate-source resistor to ensure the MOSFET stays off when the controller is in reset or unpowered. For PWM applications above 50 kHz, verify the gate driver can source/sink the Qg = 11 nC in the required transition time, otherwise switching losses will dominate. Finally, ensure the maximum drain current is derated for TA above 25 C using the thermal resistance curve.
Minimize loop inductance in the source-return path by placing input bypass capacitors directly between drain and source pads with the shortest possible trace length. For buck topologies using this MOSFET as the low-side sync FET, keep the boot-strap capacitor connection within 5 mm of the high-side drain. Avoid routing sensitive analog signals (e.g., current-sense amplifiers) across the drain switching node without proper guarding or shielding.
Compliance-Informationen
RoHS compliant per Infineon product page (no Pb, no Br, no halogen). JEDEC qualified, MSL1. Not AEC-Q100 qualified for automotive; consult Infineon automotive-grade parts for that use case.
