IRLTS6342TRPBF - 30V 8.3A N-Channel Logic-Level MOSFET | Infineon
MPN: IRLTS6342TRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.36 | $3.60 |
| 100 | $0.28 | $28.00 |
| 500 | $0.22 | $110.00 |
| 1,000 | $0.19 | $190.00 |
| 3,000 | $0.16 | $480.00 |
Drop-in alternatives for IRLTS6342TRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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IRLTS6342TRPBF
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$0.16 / Unit
View Datasheet βIRLML6342TRPBF
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IRLMS6802TRPBF
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
VB7322
β Drop-Inπ Reference alternative (not in catalog)
DMG3415U-7
β Drop-Inπ Reference alternative (not in catalog)
SI2302CDS-T1-GE3
β Drop-Inπ Reference alternative (not in catalog)
IRLTS6342TRPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel MOSFET |
| Technology | IR MOSFET (HEXFET) |
| Drain-to-Source Voltage (VDS) | 30 V |
| Gate-to-Source Voltage (VGS) | Β±12 V (max) |
| Continuous Drain Current (ID) | 8.3 A (Ta) |
| On-Resistance (RDS(on)) max | 17.5 mOhm @ VGS = 4.5 V |
| On-Resistance (RDS(on)) | 22 mOhm @ VGS = 2.5 V |
| Total Gate Charge (Qg) | 11 nC @ VGS = 4.5 V |
| Gate Threshold Voltage (VGS(th)) | 1.1 V |
| Input Capacitance (Ciss) | 1.01 nF |
| Output Capacitance (Coss) | 96 pF |
| Reverse Transfer Capacitance (Crss) | 70 pF |
| Power Dissipation (PD) | 2 W (Ta) |
| Operating Temperature Range | -55 C to +150 C |
| Package | TSOP-6 (Micro 6) |
| Mounting Type | Surface Mount |
| MSL Level | MSL1 |
| Qualification | JEDEC, Consumer |
| RoHS Status | Compliant (Pb-free, Br-free, Halogen-free) |
IRLTS6342TRPBF Pin Configuration
| Pin 1 | Source β Source (internally connected to pin 3) |
| Pin 2 | Gate β Gate drive input (logic-level) |
| Pin 3 | Source β Source (internally connected to pin 1) |
| Pin 4 | Drain β Drain (internally connected to pins 5, 6) |
| Pin 5 | Drain β Drain (internally connected to pins 4, 6) |
| Pin 6 | Drain β Drain (internally connected to pins 4, 5) |
Safe Operating Area (DC, TA = 25 C)
Typical Applications
IRLTS6342TRPBF is suitable for 6 applications: Battery-Operated DC Motor Inverter, Low-Side Load Switch in Portable Electronics, Synchronous Rectification in Buck Converters, Battery Protection Circuit (Low-Side FET), USB Power Management and VBUS Load Switch, LED Driver High-Side Switch (Low-Voltage).
Battery-Operated DC Motor Inverter
The IRLTS6342TRPBF is designed for low-voltage DC motor inverter circuits in battery-operated equipment such as cordless tools, small drones, and robotics. Its 30 V VDS rating comfortably exceeds the typical 8.4 V (2S Li-ion) or 12.6 V (3S Li-ion) battery bus with substantial transient headroom. The 17.5 mOhm RDS(on) at VGS = 4.5 V allows the device to switch up to 8.3 A continuously with low conduction loss, while the 11 nC total gate charge keeps driver losses low at PWM frequencies up to 100 kHz. Driven directly from a microcontroller's PWM output at 3.3 V, it enables bidirectional H-bridge topologies for brushed DC motors and half-bridge drives for brushless DC motors in compact form factors.
Recommended
Low-Side Load Switch in Portable Electronics
In portable and battery-powered devices, the IRLTS6342TRPBF serves as a low-side load switch to disconnect subsystems (GPS, BLE radio, sensors) during sleep mode to extend battery life. Its logic-level gate threshold of 1.1 V and full enhancement at 2.5 V VGS allows direct connection to a microcontroller GPIO without a separate gate driver IC. The 17.5 mOhm on-resistance minimizes voltage drop across the switch, preserving supply headroom for downstream regulators. The TSOP-6 package occupies less than 9 mmΒ² of PCB area, critical for wearables and ultra-compact designs. Infineon's IR MOSFET technology ensures fast switching and robust avalanche capability for inrush events during load connection.
Recommended
Synchronous Rectification in Buck Converters
As the low-side synchronous rectifier in buck converters up to 8 A output, the IRLTS6342TRPBF replaces the conventional Schottky diode to achieve efficiencies above 95 percent. With a body diode and 30 V VDS rating, it handles the switching transitions in continuous-conduction-mode operation across 12 V input rails. The 96 pF output capacitance and 70 pF reverse-transfer capacitance reduce dead-time losses, while the 11 nC gate charge at 4.5 V VGS minimizes the energy required from the bootstrap driver. Designers pair it with a dedicated gate driver (e.g., UCC27211) or a controller with integrated low-side driver for sub-100 ns switching transitions.
Recommended
Battery Protection Circuit (Low-Side FET)
The IRLTS6342TRPBF is used as the low-side protection MOSFET in lithium-ion battery management systems (BMS) for single-cell or 2S packs, where its 30 V VDS rating provides ample margin over the maximum cell voltage. In a fault condition (overcurrent, short circuit, over-discharge), the gate is pulled to ground to disconnect the load. The logic-level gate allows the protection IC to drive the MOSFET directly without an intermediate driver stage. Its 8.3 A continuous rating handles the discharge currents of typical consumer electronics and small power tools. TSOP-6 packaging is ideal for the compact PCB layouts of battery packs and protection modules.
Recommended
USB Power Management and VBUS Load Switch
In USB Type-C and USB-PD applications, the IRLTS6342TRPBF acts as a VBUS load switch or ORing FET to manage power flow between multiple sources. Its 30 V VDS rating handles the 20 V maximum USB-PD voltage with adequate derating, while the 17.5 mOhm RDS(on) at VGS = 4.5 V keeps voltage drop below 50 mV at 3 A. The logic-level gate allows direct GPIO control from a USB Type-C port controller without an external driver. Combined with its fast switching speed, it supports the hot-swap transients required during source-sink role swaps in DRP (dual-role port) applications.
Recommended
LED Driver High-Side Switch (Low-Voltage)
The IRLTS6342TRPBF functions as a high-side constant-current driver switch for LED strings in 12 V automotive interior lighting, decorative LED strips, and indicator panels. Operating as a saturated switch driven by a constant-current controller, its 17.5 mOhm RDS(on) provides headroom for current-sense resistors in the 100-500 mA range. The 30 V VDS rating handles inductive transients from the LED load, while its logic-level gate simplifies PWM dimming directly from a microcontroller. Its small TSOP-6 footprint enables high-density LED driver PCBs with minimal thermal impact at typical LED currents.
Recommended
Recommended Products Summary
Engineering reference data for IRLTS6342TRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRLML6342TRPBF | IRLMS6802TRPBF | VB7322 | DMG3415U-7 | SI2302CDS-T1-GE3 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | VBsemi | Diodes Incorporated | Vishay Intertechnology |
| Package | TSOP-6 | TSOP-6 | TSOP-6 | SOT-23-6 | TSOP-6 | TSOP-6 |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 20 V | 30 V | 20 V | 20 V |
| Continuous Drain Current (ID) | 8.3 A | 5.7 A | 6.0 A | 8.0 A (typical) | 4.0 A | 2.6 A |
| On-Resistance (RDS(on)) max | 17.5 mOhm @ 4.5 V | 30 mOhm @ 4.5 V | 40 mOhm @ 4.5 V | [DATA_NEEDED] | 50 mOhm @ 4.5 V | 85 mOhm @ 4.5 V |
| Gate Threshold (VGS(th)) | 1.1 V | 1.0 V | 0.7 V | [DATA_NEEDED] | 1.0 V | 1.0 V |
| Total Gate Charge (Qg) | 11 nC | 8 nC | 10 nC | [DATA_NEEDED] | 5 nC | 4 nC |
| Power Dissipation (PD) | 2 W | 1.7 W | 1.5 W | [DATA_NEEDED] | 1.7 W | 1.25 W |
| Logic-Level Gate (2.5 V drive) | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Higher continuous drain current than competing TSOP-6 logic-level MOSFETs (vs DMG3415U-7 (Diodes Incorporated))
- 30 V VDS vs 20 V for typical TSOP-6 N-channel competitors (vs SI2302CDS-T1-GE3 (Vishay))
- Lower on-resistance per area than P-channel equivalents (vs BSS84 (Infineon, P-channel))
- Wider distributor availability with multi-vendor sourcing (vs VB7322 (VBsemi, China))
Design Notes
At ID = 8.3 A and RDS(on) = 17.5 mOhm, conduction loss is approximately 1.2 W (estimated: IΒ² x RDS(on) = 8.3Β² x 0.0175). Combined with switching losses at typical 100 kHz operation, total power dissipation approaches the 2 W package limit. Use at least 100 mmΒ² of PCB copper under the TSOP-6 drain tab to keep junction temperature rise below 50 C. For continuous operation above 5 A, consider active cooling or a larger package such as SO-8.
The TSOP-6 drain pins (4, 5, 6) are internally bonded and serve as the primary thermal path to the PCB. Use a continuous top-layer copper pour connected to the drain, with multiple thermal vias to inner layers for heat spreading. According to Infineon's TSOP-6 footprint recommendations, a 30 mmΒ² copper pad yields approximately 75 C/W thermal resistance. Place the gate drive trace away from drain switching nodes to minimize dv/dt-induced false triggering.
Do not exceed the maximum VGS rating of Β±12 V, even momentarily - gate oxide rupture destroys the device. Add a 10 kOhm gate-source resistor to ensure the MOSFET stays off when the controller is in reset or unpowered. For PWM applications above 50 kHz, verify the gate driver can source/sink the Qg = 11 nC in the required transition time, otherwise switching losses will dominate. Finally, ensure the maximum drain current is derated for TA above 25 C using the thermal resistance curve.
Minimize loop inductance in the source-return path by placing input bypass capacitors directly between drain and source pads with the shortest possible trace length. For buck topologies using this MOSFET as the low-side sync FET, keep the boot-strap capacitor connection within 5 mm of the high-side drain. Avoid routing sensitive analog signals (e.g., current-sense amplifiers) across the drain switching node without proper guarding or shielding.
Compliance Information
RoHS compliant per Infineon product page (no Pb, no Br, no halogen). JEDEC qualified, MSL1. Not AEC-Q100 qualified for automotive; consult Infineon automotive-grade parts for that use case.
