K3KL9L90CM-MGCT - 64Gb LPDDR5X 7500Mbps x32 DRAM | Samsung
Teilenummer: K3KL9L90CM-MGCT ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $45.31 | $45,31 |
| 10 | $43.05 | $430,50 |
| 100 | $40.9 | $4.090,00 |
| 500 | $38.85 | $19.425,00 |
| 1.000 | $36.91 | $36.910,00 |
K3KL9L90CM-MGCT Übersicht
LPDDR5X (Low Power Double Data Rate 5X) is an enhanced evolution of the LPDDR5 standard defined by JEDEC, targeting dramatically higher bandwidth with lower operating voltage. It sits at the top of the mobile DRAM hierarchy (LPDDR4X -> LPDDR5 -> LPDDR5X) and serves as the main-system-memory technology for smartphones, tablets, laptops, AI accelerators, and automotive infotainment platforms. As volatile memory, it provides fast working storage for a processor but must be re-initialized at every power cycle.
Key features of this device include the 64 Gbit density per die (8 GByte per package in x32 organization), 7500 Mbps pin speed for approximately 300 Gbps of aggregate bandwidth per 32-bit channel, and LPDDR5X-class low supply voltages (VDDQ 500 mV core interface domain with 900 mV/1.05 V core rails and 1.8 V I/O and power domains per the JLCPCB listing). The industrial-grade operating range of -25C to +85C supports demanding embedded deployments.
Architecturally, the device implements LPDDR5X signaling with dynamic voltage scaling, deep sleep modes, and per-bank refresh schemes inherited from LPDDR5, enabling platforms compliant with JEDEC JESD209-5B-class requirements to exploit full 7500 Mbps operation. Command/address training and DFE-based receiver equalization sustain signal integrity at high data rates over standard PCB stackups.
Typical applications include AI edge-compute modules, high-performance smartphone and tablet main memory, industrial controllers requiring embedded logging, computing/COM express modules, and firmware boot and data-storage subsystems that pair DRAM with NAND.
Design consideration: LPDDR5X at 7500 Mbps requires strict fly-by termination topology, length-matched routing, and careful power-domain isolation of the 500 mV VDDQ rail; memory-controller training quality directly determines achievable speed bin.
This page consolidates verified distributor stock, drop-in same-family alternatives, and practical sourcing guidance not found in the manufacturer datasheet.
Drop-in-Alternativen für K3KL9L90CM-MGCT – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit K3KL9L90CM-MGCT (gleiche Bauform und Footprint) – abweichend in Package, Interface, Memory Type, Density, Data Rate.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
K3KL3L30CM-BGCU
✅ Drop-In✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K3KL3L30CM-BGCT
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K3KL8L80CM-MGCT
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K3KL9L90CM-MGCT Grenzwerte & elektrische Eigenschaften
| Speichertyp | LPDDR5X SDRAM (DRAM) |
| Speichergröße | 64 Gbit (8 GByte) |
| Memory Organization | x32 |
| Maximum Data Rate | 7500 Mbps |
| Schnittstelle | LPDDR5X |
| Supply Voltages | 500 mV / 900 mV / 1.05 V / 1.8 V |
| VDDQ | 500 mV |
| Betriebstemperatur | -25C to +85C |
| Gehäuse | FBGA-315 (BGA-315) |
| Ball Pitch | 0.8 mm |
| Montageart | Surface Mount |
| RoHS-Status | Compliant (per JLCPCB listing) |
| Product Status | Active |
| Typical Applications | Data storage, firmware boot, embedded logging, industrial controllers, computing modules |
| Memory Standard | JEDEC LPDDR5X-class (JESD209-5B family) |
K3KL9L90CM-MGCT fbga-315 (bga-315) Pinbelegungsleitfaden
Pinbelegung für K3KL9L90CM-MGCT (fbga-315 (bga-315)-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für K3KL9L90CM-MGCT.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
K3KL9L90CM-MGCT ist geeignet für 6 Anwendungs: AI Edge Compute Modules, Smartphone and Tablet Main Memory, Industrial Controllers and Embedded Logging, Computing Modules (COM Express / SoM), Firmware Boot and Data Storage Subsystems, Replacement Sourcing and Legacy Redesign.
AI Edge Compute Modules
The K3KL9L90CM-MGCT fits AI edge-compute designs because its 64 Gbit density and 7500 Mbps x32 interface deliver roughly 300 Gbps of per-channel bandwidth, matching the memory-hungry working-set requirements of on-device neural inference. In a typical SoM design, one or two of these packages sit directly under or adjacent to the AI SoC on a fly-by LPDDR5X bus, powered from a dedicated 500 mV VDDQ rail with 1.8 V and 1.05 V support domains. The -25C to +85C industrial range allows fanless edge enclosures, while the 315-ball 0.8 mm-pitch FBGA keeps routing compact on 8-10 layer stackups.
Empfohlen
Smartphone and Tablet Main Memory
LPDDR5X is the mainstream mobile main-memory technology, and the 64 Gbit x32 K3KL9L90CM-MGCT aligns with flagship smartphone DRAM configurations of 8 GByte and above. Its 7500 Mbps pin speed supports the memory bandwidth demanded by large-camera ISP pipelines and multitasking operating systems, while LPDDR5X low-voltage operation (500 mV VDDQ) reduces memory-subsystem power versus LPDDR5 at equivalent speed - Samsung advertises roughly 20% better power efficiency for the family. The -25C to +85C range and RoHS-compliant FBGA-315 package suit high-volume mobile assembly with standard reflow profiling.
Empfohlen
Industrial Controllers and Embedded Logging
Industrial controllers benefit from the K3KL9L90CM-MGCT combination of large volatile working memory and an industrial -25C to +85C operating range, per the Samsung product overview that explicitly targets industrial controllers, embedded logging, and firmware boot. In these designs the DRAM buffers process data and event logs before commit to NAND, and the 7500 Mbps x32 interface keeps real-time control loops responsive under heavy logging traffic. Designers should implement LPDDR5X deep-sleep and self-refresh modes to minimize standby power in always-on PLC-class equipment.
Empfohlen
Computing Modules (COM Express / SoM)
Computer-on-module vendors use packaged LPDDR5X dies like the K3KL9L90CM-MGCT to deliver 8-16 GByte memory options on a single carrier-compatible footprint. The 315-ball FBGA with 0.8 mm ball pitch mounts on 8-12 layer module PCBs using standard HDI processes, and the x32 organization allows one- or two-package channel topologies to scale capacity without changing the module connector. At 7500 Mbps, module vendors must budget strict length matching and reference-plane integrity; the resulting ~300 Gbps per channel bandwidth supports x86 and ARM compute modules for network appliances and edge servers.
Empfohlen
Firmware Boot and Data Storage Subsystems
The Samsung product overview lists data storage, firmware boot, and replacement sourcing as target uses for the K3KL9L90CM-MGCT. In boot-centric architectures the DRAM acts as the execution workspace where compressed firmware images are decompressed and run at 7500 Mbps-class bandwidth, shortening cold-boot times versus lower-speed LPDDR4X. Paired with NAND devices, the LPDDR5X device buffers page-mapping tables and write coalescing caches; its 64 Gbit capacity is sufficient for storage controllers that manage multi-terabyte flash arrays, and the industrial temperature range suits storage appliances in unconditioned environments.
Empfohlen
Replacement Sourcing and Legacy Redesign
Because open-market distributors (Wolfchip, icDirectory, Fusion Worldwide, Win Source) carry substantial K3KL9L90CM-MGCT stock - 30250 pcs reported as of Aug 31, 2026 - the part is a practical replacement-sourcing target for platforms whose original LPDDR5X supplier is allocated or discontinued. The identical 315-ball footprint and 0.8 mm pitch across the Samsung K3KL9L90CM family means PCBs designed around one variant can accept siblings after density-strap verification. This page consolidates verified stock and drop-in family members to shorten shortage-resolution cycles for end-of-life platform maintenance.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für K3KL9L90CM-MGCT – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | K3KL3L30CM-BGCU | K3KL3L30CM-BGCT | K3KL8L80CM-MGCT |
|---|---|---|---|---|
| Package | FBGA-315 (BGA-315) | BGA (x64 organization package) | BGA (sibling speed bin) | FBGA-315 (BGA-315) - same |
| Brand | Samsung Electronics | Samsung Semiconductor | Samsung Semiconductor | Samsung Semiconductor |
| Memory Size | 64 Gbit | 64 Gbit | 64 Gbit | 32 Gbit |
| Memory Organization | x32 | x64 | x32 | x32 |
| Memory Type | LPDDR5X DRAM | LPDDR5X DRAM | LPDDR5X DRAM | LPDDR5X DRAM |
| Lifecycle Status | Active | Active | Active | Active |
Wichtigste Unterscheidungsmerkmale
- Maximum density per package in family (vs. K3KL8L80CM-MGCT)
- Narrower x32 organization simplifies single-channel designs (vs. K3KL3L30CM-BGCU)
- Industrial temperature range (vs. K3KL8L80CM-MGCT)
Designhinweise
At 7500 Mbps, LPDDR5X routing demands length-matched fly-by command/address topology and controlled-impedance data lanes. Keep data-group skews within +/-2 ps and use ODT (on-die termination) settings from the Samsung datasheet for the 7500 Mbps bin. Receiver DFE and CA training in the SoC memory controller must be enabled; skipping per-byte training calibration is the most common cause of failure to reach full speed bin.
The K3KL9L90CM-MGCT requires four supply domains: 1.8 V (VDD2/VDD1 auxiliaries per JLCPCB listing), 1.05 V and 900 mV core rails, and a 500 mV VDDQ rail. Sequence VDD2 first, then VDDQ/core, per LPDDR5X power-up requirements. The 500 mV rail carries the highest transient currents at 7500 Mbps - budget bulk and 100 nF per-ball-cluster decoupling and verify rail droop during simultaneous read/write bursts.
Use an 8-12 layer HDI stackup with solid reference planes under all LPDDR5X nets; the 0.8 mm ball pitch of the 315-ball FBGA allows via-in-pad escape on 4 mil traces. Avoid splitting the VDDQ reference plane under data lanes. Follow Samsung LPDDR5X package layout guidelines for ball-map fanout and keep the DRAM within 100 mm of the SoC when possible to hold eye margins at 7500 Mbps.
Compliance-Informationen
RoHS compliance marked per JLCPCB listing. Lead-free consistent with RoHS BGA solder-ball construction. Obtain official Samsung material declarations from the Samsung compliance portal for lot-specific REACH and halogen-free statements.
