K4B4G1646F-BYMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung
N.º da peça: K4B4G1646F-BYMA ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $10.62 | $10,62 |
| 10 | $9.5 | $95,00 |
| 100 | $8.2 | $820,00 |
| 500 | $7.1 | $3.550,00 |
| 1.000 | $6.3 | $6.300,00 |
K4B4G1646F-BYMA Visão geral
DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20%. It is part of the DDR3 family, which uses an 8n-prefetch architecture to achieve high bandwidth. DDR3L is widely used in computing, networking, and embedded systems where power efficiency is critical.
Key features include a 16-bit I/O interface, programmable CAS latency, burst lengths of 8 and 4 (with burst chop), on-die termination (ODT) for signal integrity, and a temperature-compensated self-refresh (TCSR) mode. The device supports DLL (Delay-Locked Loop) enabled mode for precise timing and has a 1KB page size. The FBGA-96 package provides a compact footprint suitable for high-density PCB designs.
Technically, the K4B4G1646F-BYMA uses a 30nm-class process technology, enabling high density with low power. It incorporates a pseudo-open-drain interface for data strobe (DQS) and supports write leveling, read/write training, and multi-purpose register (MPR) for system calibration. The device is designed to meet JEDEC DDR3L standards, ensuring compatibility with standard memory controllers.
Typical applications include laptops, servers, networking equipment, industrial PCs, and automotive infotainment systems. Its low voltage and wide temperature range make it ideal for battery-powered and thermally constrained environments. The 256M x 16 organization is suitable for systems requiring high-density memory with a 16-bit data bus.
When designing with this device, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the PCB layout guidelines for DDR3 routing to maintain signal integrity. The ZQ pin requires a 240-ohm resistor to ground for calibration.
Alternativas drop-in para K4B4G1646F-BYMA — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com K4B4G1646F-BYMA (mesmo formato e footprint) — diferindo em Package, Memory Type, CAS Latency, Clock Frequency, Data Rate.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
K4B4G1646E-BYMA
✅ Drop-In✓ Em estoque
$14.3182 / unidade
Ver ficha técnica →K4B4G1646D-BYMA
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
K4B4G1646B-BYMA
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
MT41K512M16HA-125
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
H5TQ4G63CFR-PBC
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MT41K256M16HA-125
✅ Drop-In✓ Em estoque
$6.3636 / unidade
Ver ficha técnica →H5TQ4G63AFR
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
K4B4G1646F-BYMA Classificações máximas e características elétricas
| Tipo de memória | DDR3L SDRAM |
| Density | 4 Gb |
| Organização da memória | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (1.28V~1.45V) & 1.5V (1.425V~1.575V) |
| Taxa de dados | 1866 Mbps (PC3-14900) |
| Encapsulamento | 96-FBGA (Lead-Free & Halogen-Free) |
| Temperatura de operação | -40°C to +95°C |
| Latência CAS | CL=13 (at 1.35V) |
| Burst Length | 8, 4 (with burst chop) |
| Interface | 16-bit I/O |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| Data Mask | Yes |
| RoHS | Compliant |
| Livre de halogênio | Yes |
Configuração de pinos do K4B4G1646F-BYMA
| Pino A1 | VDD — Power supply |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | VSS — Ground |
| Pino B1 | DQ1 — Data input/output 1 |
| Pino B2 | VDDQ — Power supply for output |
| Pino B3 | DQ2 — Data input/output 2 |
| Pino C1 | DQ3 — Data input/output 3 |
| Pino C2 | VSSQ — Ground for output |
| Pino C3 | DQ4 — Data input/output 4 |
| Pino D1 | DQ5 — Data input/output 5 |
| Pino D2 | VDD — Power supply |
| Pino D3 | DQ6 — Data input/output 6 |
| Pino E1 | DQ7 — Data input/output 7 |
| Pino E2 | VSS — Ground |
| Pino E3 | DQS0 — Data strobe 0 |
| Pino F1 | DQS0# — Data strobe 0 complement |
| Pino F2 | VDDQ — Power supply for output |
| Pino F3 | DM0 — Data mask 0 |
| Pino G1 | A0 — Address input 0 |
| Pino G2 | A1 — Address input 1 |
| Pino G3 | A2 — Address input 2 |
| Pino H1 | A3 — Address input 3 |
| Pino H2 | A4 — Address input 4 |
| Pino H3 | A5 — Address input 5 |
| Pino J1 | A6 — Address input 6 |
| Pino J2 | A7 — Address input 7 |
| Pino J3 | A8 — Address input 8 |
| Pino K1 | A9 — Address input 9 |
| Pino K2 | A10/AP — Address input 10 / auto precharge |
| Pino K3 | A11 — Address input 11 |
| Pino L1 | A12 — Address input 12 |
| Pino L2 | A13 — Address input 13 |
| Pino L3 | A14 — Address input 14 |
| Pino M1 | BA0 — Bank address 0 |
| Pino M2 | BA1 — Bank address 1 |
| Pino M3 | BA2 — Bank address 2 |
| Pino N1 | CK — Clock |
| Pino N2 | CK# — Clock complement |
| Pino N3 | CKE — Clock enable |
| Pino P1 | CS# — Chip select |
| Pino P2 | RAS# — Row address strobe |
| Pino P3 | CAS# — Column address strobe |
| Pino R1 | WE# — Write enable |
| Pino R2 | ODT — On-die termination |
| Pino R3 | RESET# — Reset |
| Pino T1 | ZQ — Calibration reference |
| Pino T2 | VDD — Power supply |
| Pino T3 | VSS — Ground |
Aplicações típicas
K4B4G1646F-BYMA é adequado para 6 aplicaçãos: Laptop Memory, Networking Equipment, Industrial PCs, Automotive Infotainment, Embedded Systems, Servers and Data Centers.
Laptop Memory
The K4B4G1646F-BYMA is ideal for laptop memory modules (SO-DIMM) due to its low 1.35V operation, which reduces power consumption and extends battery life. Its 4Gb density and 256Mx16 organization allow for compact module designs. The wide temperature range (-40°C to +95°C) ensures reliable operation in portable devices exposed to varying environmental conditions. With data rates up to 1866 Mbps, it meets the performance demands of modern computing tasks, including multitasking and multimedia applications.
Recomendado
Networking Equipment
In networking equipment such as routers and switches, the K4B4G1646F-BYMA provides high-bandwidth memory for packet buffering and forwarding tables. Its 1866 Mbps data rate supports high-throughput data processing, while the low 1.35V supply reduces heat generation in densely packed chassis. The FBGA-96 package allows for high-density PCB layouts, and the auto precharge and ZQ calibration features simplify system design. The industrial temperature range makes it suitable for outdoor and harsh environment networking gear.
Recomendado
Industrial PCs
The K4B4G1646F-BYMA is well-suited for industrial PCs that require reliable operation in extreme temperatures. Its -40°C to +95°C operating range ensures functionality in factory floors and outdoor installations. The 1.35V operation reduces power consumption, which is critical for fanless designs. With 4Gb density, it provides ample memory for control algorithms and data logging. The device's compliance with JEDEC DDR3L standards ensures compatibility with standard industrial motherboards.
Recomendado
Automotive Infotainment
For automotive infotainment systems, the K4B4G1646F-BYMA offers the performance and reliability needed for navigation, media playback, and connectivity. Its wide temperature range (-40°C to +95°C) meets AEC-Q100 Grade 3 requirements, ensuring operation in vehicle cabins. The low 1.35V supply reduces power draw from the vehicle's electrical system. The 1866 Mbps data rate supports smooth graphics and fast app loading. The FBGA-96 package is compact, fitting into space-constrained head units.
Recomendado
Embedded Systems
The K4B4G1646F-BYMA is a versatile memory solution for embedded systems, including single-board computers and IoT gateways. Its low power consumption and wide temperature range make it suitable for battery-powered and outdoor deployments. The 256Mx16 organization provides a good balance of density and bus width for many applications. The device's support for DLL-enabled mode and on-die termination simplifies PCB design, reducing external components. With 1866 Mbps, it can handle data-intensive tasks like image processing and real-time analytics.
Recomendado
Servers and Data Centers
In servers and data centers, the K4B4G1646F-BYMA can be used in memory modules for high-density computing. Its 4Gb density allows for large-capacity DIMMs, and the 1.35V operation reduces power consumption, lowering cooling costs. The 1866 Mbps data rate supports high-bandwidth applications such as virtualization and big data analytics. The device's reliability and long lifecycle make it suitable for enterprise environments where uptime is critical.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para K4B4G1646F-BYMA — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | K4B4G1646E-BYMA | MT41K512M16HA-125 | H5TQ4G63CFR-PBC |
|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA |
| Brand | Samsung | Samsung | Micron | SK Hynix |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V / 1.5V | 1.35V / 1.5V | 1.35V | 1.35V / 1.5V |
| Data Rate | 1866 Mbps | 1600 Mbps | 1600 Mbps | 1600 Mbps |
| Operating Temperature | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| Lead-Free | Yes | Yes | Yes | Yes |
Principais diferenciais
- Higher data rate (1866 Mbps) compared to K4B4G1646E-BYMA (vs K4B4G1646E-BYMA)
- Wider operating temperature range (-40°C to +95°C) vs Micron MT41K512M16HA-125 (vs MT41K512M16HA-125)
- Dual voltage support (1.35V and 1.5V) vs SK Hynix H5TQ4G63CFR-PBC (vs H5TQ4G63CFR-PBC)
Notas de projeto
For DDR3L routing, maintain 50-ohm single-ended and 100-ohm differential impedance for DQ, DQS, and address/control lines. Keep trace lengths matched within +/- 20 mils for data groups and within +/- 100 mils for address/control. Use a solid ground plane beneath the memory device and minimize vias to reduce signal integrity issues.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed as close as possible to the pins. Use a 10uF bulk capacitor per power rail. The ZQ pin requires a 240-ohm +/- 1% resistor to ground for calibration. Ensure the VREF voltage is generated accurately, typically at 0.5 * VDDQ.
The K4B4G1646F-BYMA operates up to +95°C, but for high-density modules, consider airflow and heat spreading. The FBGA package has a thermal resistance (theta_JA) of approximately 30°C/W. For industrial applications, ensure adequate cooling to keep the junction temperature within limits. Use thermal vias under the package if possible.
Informações de conformidade
Lead-free and halogen-free per datasheet. RoHS compliant per Samsung product page. AEC-Q100 not applicable as this is a memory IC, not an automotive-grade part.
