MRF6S9130HSR3 - 27W 880MHz RF Power MOSFET | NXP Semiconductors
Teilenummer: MRF6S9130HSR3 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $95 | $95,00 |
| 10 | $88.5 | $885,00 |
| 100 | $78 | $7.800,00 |
| 500 | $70.2 | $35.100,00 |
| 1.000 | $65 | $65.000,00 |
MRF6S9130HSR3 Übersicht
A radio-frequency power MOSFET (LDMOS) is a lateral double-diffused metal-oxide-semiconductor transistor optimized for high-frequency, high-power operation in the 100 MHz to 30 GHz range. LDMOS devices dominate cellular base-station power amplifier (PA) designs because they combine high RF power density, reasonable gain, and straightforward 28 V or 50 V drain biasing. The MRF6S9130HSR3 sits within the LDMOS -> RF power transistor -> discrete semiconductor -> power management hierarchy.
Key differentiating features include 19.2 dB typical power gain at 880 MHz, 27 W average output power for N-CDMA single-carrier waveforms, and the NI-780S hermetic ceramic flange package that provides a low thermal resistance path from die to heatsink. The HSR3 suffix denotes a tape-and-reel shipping form factor rather than the HR3 bolt-down flange variant. The part was originally released by Freescale Semiconductor and migrated to NXP after the 2015 acquisition; PCN12895 covers MRF6S9160-series migration to the MRFE6S9160 family.
Typical applications include 880 MHz N-CDMA cellular base-station PAs, GSM and GSM EDGE driver/final stages in multicarrier amplifiers, and other sub-1 GHz industrial RF power blocks. The 28 V bias and high gain reduce the number of driver stages required, simplifying PA lineups.
When designing with this part, ensure adequate drain bias decoupling with low-ESR ceramic capacitors placed within 5 mm of the lead, and provide a substantial copper or aluminum heatsink rated for the calculated Pdiss (for 27 W Pout at roughly 50% efficiency, internal dissipation approaches 27 W).
Drop-in-Alternativen für MRF6S9130HSR3 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MRF6S9130HSR3 (gleiche Bauform und Footprint) – abweichend in Mounting Type, Manufacturer, Package / Case, Technology, Transistor Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRF6S9130HR3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF6S9160HR3
✅ Drop-In✓ Auf Lager
$510 / Stück
Datenblatt ansehen →MRF6S9160HSR3
✅ Drop-In✓ Auf Lager
$92.4 / Stück
Datenblatt ansehen →MRF6S9125NR1
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRFE6S9160HR3
✅ Drop-In✓ Auf Lager
$25.2 / Stück
Datenblatt ansehen →MRF6S9130HSR3 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Status | Active |
| Transistortyp | Lateral N-Channel RF Power MOSFET (LDMOS) |
| Operating Frequency | 880 MHz |
| Drain-Source Voltage (Vdss) Max | 68 V |
| Typical Quiescent Current (Idq) | 950 mA |
| Output Power (Pout) Avg | 27 W (N-CDMA single-carrier) |
| Power Gain (Gps) | 19.2 dB typical |
| Supply Voltage (Vdd) Recommended | 28 V |
| Gehäuse / Bauform | NI-780S (CASE 465-06, Style 1) ceramic flange |
| Montageart | Chassis / flange mount with screw-down |
| Pin-Anzahl | 3 |
| Style | Style 1 |
| Technology | LDMOS (laterally diffused MOS) |
| RoHS-Status | Compliant |
| Lead-Free | Yes |
| Packing | Tape & Reel (HSR3 suffix) |
| Primary Applications | N-CDMA, GSM, GSM EDGE base station PAs, 880-960 MHz multicarrier amplifiers |
MRF6S9130HSR3 Pin-Konfiguration
| Pin 1 | Drain — RF output / drain bias (connected to flange) |
| Pin 2 | Gate — RF input / gate bias |
| Pin 3 | Source — Source / RF ground (bolted to flange) |
Sicherer Arbeitsbereich (DC)
Typische Anwendungen
MRF6S9130HSR3 ist geeignet für 6 Anwendungs: 880 MHz N-CDMA Base Station Final PA, GSM / GSM EDGE Multicarrier Driver Amplifier, Industrial / Scientific 900 MHz RF Power Block, Repeater / Booster PA Stage, Public-Safety 800/900 MHz P25 / TETRA PA, Test & Measurement RF Power Amplifier Module.
880 MHz N-CDMA Base Station Final PA
The MRF6S9130HSR3 is purpose-built for 880 MHz N-CDMA cellular base-station final power amplifier stages, where its 27 W average Pout and 19.2 dB gain minimize the number of driver stages required in the lineup. The LDMOS transistor operates from a 28 V drain supply, providing an optimum trade-off between RF power density, N-CDMA linearity, and ruggedness under load mismatch. Placed at the output of the PA chain with input/output matching networks tuned for 880 MHz, the device delivers full Pout with appropriate gain compression; unlike GaN devices, it adds no exotic biasing requirements and integrates easily into existing Freescale/NXP reference designs.
Empfohlen
GSM / GSM EDGE Multicarrier Driver Amplifier
The MRF6S9130HSR3 functions as a driver or intermediate gain block in 900 MHz GSM EDGE base-station multicarrier amplifiers, where the LDMOS gap linearity is well-suited to the GMSK/8-PSK modulation envelope. With 19.2 dB of typical gain at 880-915 MHz, a single stage can deliver enough drive to a higher-power final LDMOS; the ceramic NI-780S flange keeps junction temperature manageable even in confined MTBF-bound fan-cooled enclosures. Designed-in line with NXP base-station reference designs, the MRF6S9130HSR3 multicarrier capability makes it a workhorse for cost-sensitive 900 MHz GSM infrastructure.
Empfohlen
Industrial / Scientific 900 MHz RF Power Block
Industrial RF applications at 900 MHz - such as ISM-band RF generators, plasma drivers, and scientific particle-accelerator RF amplifiers - benefit from the MRF6S9130HSR3's robust 28 V LDMOS architecture and ceramic NI-780S flange. The 27 W continuous-wave RF power capability, combined with the inherent LDMOS ruggedness under severe load mismatch (high VSWR), makes the device suitable for industrial duty cycles where reliability outweighs the need for ultimate linearity. The flange-mount package bolts directly to a machined heatsink for continuous full-power operation in factory-floor or laboratory equipment.
Empfohlen
Repeater / Booster PA Stage
Cellular signal repeaters and bi-directional amplifiers (BDAs) operating in the 880-915 MHz uplink band often use the MRF6S9130HSR3 as a Class-D PA building block. The 19.2 dB gain and 27 W Pout provide the headroom needed to drive a moderate-power final stage or feed a bandpass-filtered output combiner. The 28 V supply rail matches typical repeater rack PSUs, simplifying the LDMOS bias network. NXP's MRF6S9130H.pdf reference design provides tested PCB layouts and component layout that accelerate repeater-BDA development.
Empfohlen
Public-Safety 800/900 MHz P25 / TETRA PA
Land Mobile Radio systems using P25, TETRA, and DMR waveforms at 800/900 MHz can leverage the MRF6S9130HSR3 as a high-power PA stage due to its high linearity, high gain, and 28 V rugged LDMOS design. The 19.2 dB typical gain reduces the number of cascaded gain blocks needed to reach the target transmit power, and the ceramic NI-780S flange provides the thermal headroom required for high-duty-cycle public-safety transmissions. Compared to narrowband bipolar parts, the LDMOS gap offers wider instantaneous bandwidth and improved intermodulation performance for mission-critical comms.
Empfohlen
Test & Measurement RF Power Amplifier Module
Laboratory RF test amplifiers and ATE (Automated Test Equipment) signal sources use the MRF6S9130HSR3 as a known-good 27 W RF power building block at 880 MHz. The well-characterized S-parameters and load-pull data published by NXP simplify test-fixture design, and the rugged LDMOS withstands the accidental load-mismatch events common in development labs. The ceramic NI-780S flange bolts to a standard test-bench heatsink, making it easy to integrate into modular rack-mount RF amplifier chassis for EMC, wireless-compliance, and radar test applications.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF6S9130HSR3 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF6S9130HR3 | MRF6S9160HR3 | MRF6S9160HSR3 | MRF6S9125NR1 | MRFE6S9160HR3 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780S (CASE 465-06, Style 1) | NI-780S (CASE 465-06, Style 1) - same | NI-780S (CASE 465-06, Style 1) - same | NI-780S (CASE 465-06, Style 1) - same | NI-780S (CASE 465-06, Style 1) - same | NI-780S (CASE 465-06, Style 1) - same |
| Operating Frequency | 880 MHz | 880 MHz | 960 MHz | 960 MHz | 880 MHz | 960 MHz |
| Output Power (Pout) Avg | 27 W | 27 W | 35 W | 35 W | 25 W | 35 W |
| Power Gain (Gps) | 19.2 dB | 19.2 dB | 19 dB | 19 dB | 18.5 dB | 19 dB |
| Drain Supply Voltage | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Vdss Max | 68 V | 68 V | 68 V | 68 V | 68 V | 65 V |
| Packing | Tape & Reel (HSR3) | Tray (HR3) | Tray (HR3) | Tape & Reel (HSR3) | Tape & Reel (NR1) | Tray (HR3) |
Wichtigste Unterscheidungsmerkmale
- Factory-tape-and-reel form factor for high-volume SMT-compatible production (vs. MRF6S9130HR3)
- Purpose-tuned 880 MHz N-CDMA frequency response vs higher-frequency 960 MHz variants (vs. MRF6S9160HSR3)
- Higher output power available in the same NI-780S package with the 9160 family (vs. MRF6S9160HSR3)
Designhinweise
Estimated: at 27 W Pout with 50% drain efficiency, the MRF6S9130HSR3 dissipates approximately 27 W internally. The NI-780S ceramic flange has a typical RthJC of about 0.65 C/W; to keep Tj below 150 C with a 25 C ambient, the heatsink-to-case thermal resistance must remain below 4.6 C/W. Use a machined aluminum heatsink with thermal compound and torque the mounting screws to the datasheet-specified value.
Place drain-bias decoupling capacitors (100 nF and 10 uF minimum) within 5 mm of the drain lead. Use low-ESR ceramic (X7R/X5R) capacitors and minimize loop area for the RF ground return. The source lead is internally connected to the flange - use multiple source-ground vias under the package footprint to minimize common-lead inductance.
Do not exceed Vdss of 68 V - any overvoltage from inductive kickback during load-mismatch events will permanently damage the LDMOS die. Add a TVS diode or transient suppressor across the drain if the application includes antennas that can create high VSWR. Ensure the gate-bias network prevents exceeding the maximum Vgs rating of +/-20 V; any ESD event on the gate will destroy the device.
Compliance-Informationen
RoHS and lead-free per NXP product page. AEC-Q100 not applicable for RF power MOSFET. Conflict-minerals compliant per NXP policy.
