MT41K256M16HA-107AAT:E - 4Gbit DDR3L SDRAM | Micron
Teilenummer: MT41K256M16HA-107AAT:E ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.1 | $710,00 |
| 500 | $6.5 | $3.250,00 |
| 1.000 | $5.95 | $5.950,00 |
MT41K256M16HA-107AAT:E Übersicht
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is a key component in computing systems, networking equipment, and embedded applications where high speed and low power are critical. DDR3L is backward compatible with DDR3, allowing flexible system design.
Key features include a 4Gbit density, 16-bit I/O width, 933 MHz clock frequency, and a 20ns access time. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It also features auto-refresh and self-refresh modes for power saving. The 96-ball FBGA package provides a compact footprint suitable for space-constrained designs.
Technically, the MT41K256M16HA-107AAT:E uses Micron's advanced DRAM process technology, ensuring high reliability and performance. It operates over a temperature range of 0°C to +95°C (case temperature) and is RoHS compliant. The device is designed for high-speed data transfer with minimal signal integrity issues, making it suitable for demanding applications.
Typical applications include servers, networking switches, industrial computing, and embedded systems that require high-density, low-power memory. Its 1.35V operation is ideal for battery-powered devices and energy-efficient data centers.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 933 MHz. The device supports a 1.35V supply, and the VDDQ should be matched to the I/O voltage of the controller.
Drop-in-Alternativen für MT41K256M16HA-107AAT:E – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MT41K256M16HA-107AAT:E (gleiche Bauform und Footprint) – abweichend in Package, CAS Latency, Data Rate, Operating Temperature, Supply Voltage.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MT41K256M16HA-107G:E
✅ Drop-In✓ Auf Lager
$4 / Stück
Datenblatt ansehen →MT41K256M16HA-107IT:E
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT41K256M16HA-125:E
✅ Drop-In✓ Auf Lager
$3.1 / Stück
Datenblatt ansehen →IS43TR16256AL-107MBL
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$6 / Stück
Datenblatt ansehen →NT5CB256M16CP-DI
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$6.5 / Stück
Datenblatt ansehen →K4B4G1646D-BYH9
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$2.3 / Stück
Datenblatt ansehen →MT41K256M16HA-107AAT:E Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR3L SDRAM |
| Speichergröße | 4Gbit (256M x 16) |
| Datenrate | 933 MHz (DDR3L-1866) |
| Access Time | 20 ns |
| Versorgungsspannung | 1.35V |
| Schnittstelle | Parallel |
| Gehäuse | 96-FBGA (9x14mm) |
| Betriebstemperatur | 0°C to +95°C (Tc) |
| Montageart | Surface Mount |
| RoHS-Status | Compliant |
| Speicherorganisation | 256M x 16 |
| CAS-Latenz | 13 (typical) |
| Burst Length | 8, 4 |
| On-Die Termination | Yes |
| Refresh | Auto-refresh, self-refresh |
MT41K256M16HA-107AAT:E Pin-Konfiguration
| Pin A1 | VDD — Power supply |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin A5 | DQ2 — Data input/output 2 |
| Pin A6 | DQ3 — Data input/output 3 |
| Pin A7 | VDDQ — I/O power supply |
| Pin A8 | DQ4 — Data input/output 4 |
| Pin A9 | DQ5 — Data input/output 5 |
| Pin A10 | VSS — Ground |
| Pin A11 | DQ6 — Data input/output 6 |
| Pin A12 | DQ7 — Data input/output 7 |
| Pin B1 | VSS — Ground |
| Pin B2 | DQ8 — Data input/output 8 |
| Pin B3 | DQ9 — Data input/output 9 |
| Pin B4 | VDD — Power supply |
| Pin B5 | DQ10 — Data input/output 10 |
| Pin B6 | DQ11 — Data input/output 11 |
| Pin B7 | VSS — Ground |
| Pin B8 | DQ12 — Data input/output 12 |
| Pin B9 | DQ13 — Data input/output 13 |
| Pin B10 | VDDQ — I/O power supply |
| Pin B11 | DQ14 — Data input/output 14 |
| Pin B12 | DQ15 — Data input/output 15 |
Typische Anwendungen
MT41K256M16HA-107AAT:E ist geeignet für 6 Anwendungs: Server Memory, Networking Equipment, Industrial Computing, Consumer Electronics, Automotive Infotainment, Embedded Systems.
Server Memory
The MT41K256M16HA-107AAT:E provides high-density, low-power memory for server applications. Its 4Gbit density and 933 MHz data rate support high-bandwidth workloads, while 1.35V operation reduces power consumption in data centers. The 96-ball FBGA package enables compact DIMM designs, and the device's on-die termination improves signal integrity at high speeds.
Empfohlen
Networking Equipment
In networking switches and routers, the MT41K256M16HA-107AAT:E offers the high bandwidth and low latency required for packet processing. Its 933 MHz data rate supports line-rate forwarding, and the 1.35V supply helps meet power budgets in dense line cards. The device's burst length of 8 optimizes data transfer efficiency, and its small FBGA package fits high-density PCB layouts.
Empfohlen
Industrial Computing
For industrial PCs and embedded systems, the MT41K256M16HA-107AAT:E provides reliable memory operation over a 0°C to +95°C case temperature range. Its 1.35V operation reduces heat generation, and the device's self-refresh mode minimizes power in standby. The 96-ball FBGA package is robust for vibration-prone environments, and the 20ns access time ensures responsive system performance.
Empfohlen
Consumer Electronics
In high-end consumer devices like smart TVs and gaming consoles, the MT41K256M16HA-107AAT:E delivers the memory bandwidth needed for 4K video processing and gaming. Its 933 MHz data rate supports smooth graphics, while 1.35V operation extends battery life in portable devices. The compact FBGA package enables slim product designs, and the device's low power consumption reduces thermal load.
Empfohlen
Automotive Infotainment
The MT41K256M16HA-107AAT:E is suitable for automotive infotainment systems that require high-speed memory for navigation, multimedia, and driver assistance. Its 1.35V operation is compatible with automotive power rails, and the device's wide temperature range (up to +95°C) meets under-hood requirements. The 96-ball FBGA package withstands automotive vibration, and the 933 MHz data rate supports real-time video processing.
Empfohlen
Embedded Systems
For embedded applications like medical devices and test equipment, the MT41K256M16HA-107AAT:E offers a balance of performance and power efficiency. Its 4Gbit density provides ample storage for firmware and data buffers, while 1.35V operation is ideal for battery-powered devices. The device's self-refresh mode preserves data during low-power states, and the 20ns access time ensures deterministic response in real-time systems.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MT41K256M16HA-107AAT:E – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MT41K256M16HA-107G:E | MT41K256M16HA-107IT:E | MT41K256M16HA-125:E | IS43TR16256AL-107MBL | NT5CB256M16CP-DI | K4B4G1646D-BYH9 |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA (9x14mm) | 96-FBGA (9x14mm) | 96-FBGA (9x14mm) | 96-FBGA (9x14mm) | 96-FBGA (9x14mm) | 96-FBGA (9x14mm) | 96-FBGA (9x14mm) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | ISSI | Nanya Technology | Samsung Electronics |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit | 4Gbit | 4Gbit | 4Gbit |
| Data Rate | 933 MHz | 933 MHz | 933 MHz | 800 MHz | 933 MHz | 933 MHz | 933 MHz |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Access Time | 20 ns | 20 ns | 20 ns | 13.75 ns | 20 ns | 20 ns | 20 ns |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Wichtigste Unterscheidungsmerkmale
- Higher data rate than MT41K256M16HA-125:E (vs. MT41K256M16HA-125:E)
- Standard temperature grade vs industrial (vs. MT41K256M16HA-107IT:E)
- Same package and pinout as cross-brand alternatives (vs. IS43TR16256AL-107MBL)
Designhinweise
For 933 MHz DDR3L operation, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/command lines. Keep trace lengths matched within 100 mils to minimize skew. Use a solid ground plane and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin.
The MT41K256M16HA-107AAT:E requires a 1.35V VDD and VDDQ supply. Use a low-noise LDO or a switching regulator with low ripple. Ensure the power supply can handle peak current spikes during refresh and burst operations. Add bulk capacitance (10uF) near the memory device to stabilize the supply.
The device's maximum power dissipation is approximately 1.5W at 933 MHz. With a theta_JA of 20°C/W, the junction temperature rise is 30°C above ambient. Ensure adequate airflow or a heatsink for ambient temperatures above 65°C to keep the case temperature below 95°C.
Compliance-Informationen
RoHS compliance confirmed from Micron product page. Other compliance data not specified in the provided data.
