MT41K256M16HA-107AAT:E - 4Gbit DDR3L SDRAM | Micron
부품 번호: MT41K256M16HA-107AAT:E ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $8.5 | $8.50 |
| 10 | $7.8 | $78.00 |
| 100 | $7.1 | $710.00 |
| 500 | $6.5 | $3,250.00 |
| 1,000 | $5.95 | $5,950.00 |
MT41K256M16HA-107AAT:E 개요
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is a key component in computing systems, networking equipment, and embedded applications where high speed and low power are critical. DDR3L is backward compatible with DDR3, allowing flexible system design.
Key features include a 4Gbit density, 16-bit I/O width, 933 MHz clock frequency, and a 20ns access time. The device supports on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4. It also features auto-refresh and self-refresh modes for power saving. The 96-ball FBGA package provides a compact footprint suitable for space-constrained designs.
Technically, the MT41K256M16HA-107AAT:E uses Micron's advanced DRAM process technology, ensuring high reliability and performance. It operates over a temperature range of 0°C to +95°C (case temperature) and is RoHS compliant. The device is designed for high-speed data transfer with minimal signal integrity issues, making it suitable for demanding applications.
Typical applications include servers, networking switches, industrial computing, and embedded systems that require high-density, low-power memory. Its 1.35V operation is ideal for battery-powered devices and energy-efficient data centers.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 933 MHz. The device supports a 1.35V supply, and the VDDQ should be matched to the I/O voltage of the controller.
드롭인 대체품: MT41K256M16HA-107AAT:E — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: MT41K256M16HA-107AAT:E (동일 폼 팩터 및 풋프린트) — 차이점: Package, CAS Latency, Data Rate, Operating Temperature, Supply Voltage.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MT41K256M16HA-107G:E
✅ 드롭인✓ 재고 있음
$4 / 개
데이터시트 보기 →MT41K256M16HA-107IT:E
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT41K256M16HA-125:E
✅ 드롭인✓ 재고 있음
$3.1 / 개
데이터시트 보기 →IS43TR16256AL-107MBL
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$6 / 개
데이터시트 보기 →NT5CB256M16CP-DI
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$6.5 / 개
데이터시트 보기 →K4B4G1646D-BYH9
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$2.3 / 개
데이터시트 보기 →MT41K256M16HA-107AAT:E 최대 정격 & 전기적 특성
| 메모리 유형 | DDR3L SDRAM |
| 메모리 크기 | 4Gbit (256M x 16) |
| 데이터 속도 | 933 MHz (DDR3L-1866) |
| Access Time | 20 ns |
| 공급 전압 | 1.35V |
| 인터페이스 | Parallel |
| 패키지 | 96-FBGA (9x14mm) |
| 동작 온도 | 0°C to +95°C (Tc) |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant |
| 메모리 구성 | 256M x 16 |
| CAS 레이턴시 | 13 (typical) |
| Burst Length | 8, 4 |
| On-Die Termination | Yes |
| Refresh | Auto-refresh, self-refresh |
MT41K256M16HA-107AAT:E 핀 구성
| 핀 A1 | VDD — Power supply |
| 핀 A2 | DQ0 — Data input/output 0 |
| 핀 A3 | DQ1 — Data input/output 1 |
| 핀 A4 | VSS — Ground |
| 핀 A5 | DQ2 — Data input/output 2 |
| 핀 A6 | DQ3 — Data input/output 3 |
| 핀 A7 | VDDQ — I/O power supply |
| 핀 A8 | DQ4 — Data input/output 4 |
| 핀 A9 | DQ5 — Data input/output 5 |
| 핀 A10 | VSS — Ground |
| 핀 A11 | DQ6 — Data input/output 6 |
| 핀 A12 | DQ7 — Data input/output 7 |
| 핀 B1 | VSS — Ground |
| 핀 B2 | DQ8 — Data input/output 8 |
| 핀 B3 | DQ9 — Data input/output 9 |
| 핀 B4 | VDD — Power supply |
| 핀 B5 | DQ10 — Data input/output 10 |
| 핀 B6 | DQ11 — Data input/output 11 |
| 핀 B7 | VSS — Ground |
| 핀 B8 | DQ12 — Data input/output 12 |
| 핀 B9 | DQ13 — Data input/output 13 |
| 핀 B10 | VDDQ — I/O power supply |
| 핀 B11 | DQ14 — Data input/output 14 |
| 핀 B12 | DQ15 — Data input/output 15 |
일반적인 애플리케이션
MT41K256M16HA-107AAT:E 적합 용도: 6 애플리케이션s: Server Memory, Networking Equipment, Industrial Computing, Consumer Electronics, Automotive Infotainment, Embedded Systems.
Server Memory
The MT41K256M16HA-107AAT:E provides high-density, low-power memory for server applications. Its 4Gbit density and 933 MHz data rate support high-bandwidth workloads, while 1.35V operation reduces power consumption in data centers. The 96-ball FBGA package enables compact DIMM designs, and the device's on-die termination improves signal integrity at high speeds.
추천
Networking Equipment
In networking switches and routers, the MT41K256M16HA-107AAT:E offers the high bandwidth and low latency required for packet processing. Its 933 MHz data rate supports line-rate forwarding, and the 1.35V supply helps meet power budgets in dense line cards. The device's burst length of 8 optimizes data transfer efficiency, and its small FBGA package fits high-density PCB layouts.
추천
Industrial Computing
For industrial PCs and embedded systems, the MT41K256M16HA-107AAT:E provides reliable memory operation over a 0°C to +95°C case temperature range. Its 1.35V operation reduces heat generation, and the device's self-refresh mode minimizes power in standby. The 96-ball FBGA package is robust for vibration-prone environments, and the 20ns access time ensures responsive system performance.
추천
Consumer Electronics
In high-end consumer devices like smart TVs and gaming consoles, the MT41K256M16HA-107AAT:E delivers the memory bandwidth needed for 4K video processing and gaming. Its 933 MHz data rate supports smooth graphics, while 1.35V operation extends battery life in portable devices. The compact FBGA package enables slim product designs, and the device's low power consumption reduces thermal load.
추천
Automotive Infotainment
The MT41K256M16HA-107AAT:E is suitable for automotive infotainment systems that require high-speed memory for navigation, multimedia, and driver assistance. Its 1.35V operation is compatible with automotive power rails, and the device's wide temperature range (up to +95°C) meets under-hood requirements. The 96-ball FBGA package withstands automotive vibration, and the 933 MHz data rate supports real-time video processing.
추천
Embedded Systems
For embedded applications like medical devices and test equipment, the MT41K256M16HA-107AAT:E offers a balance of performance and power efficiency. Its 4Gbit density provides ample storage for firmware and data buffers, while 1.35V operation is ideal for battery-powered devices. The device's self-refresh mode preserves data during low-power states, and the 20ns access time ensures deterministic response in real-time systems.
추천
추천 제품 요약
엔지니어링 참조 데이터: MT41K256M16HA-107AAT:E — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MT41K256M16HA-107G:E | MT41K256M16HA-107IT:E | MT41K256M16HA-125:E | IS43TR16256AL-107MBL | NT5CB256M16CP-DI | K4B4G1646D-BYH9 |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA (9x14mm) | 96-FBGA (9x14mm) | 96-FBGA (9x14mm) | 96-FBGA (9x14mm) | 96-FBGA (9x14mm) | 96-FBGA (9x14mm) | 96-FBGA (9x14mm) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | ISSI | Nanya Technology | Samsung Electronics |
| Memory Size | 4Gbit | 4Gbit | 4Gbit | 4Gbit | 4Gbit | 4Gbit | 4Gbit |
| Data Rate | 933 MHz | 933 MHz | 933 MHz | 800 MHz | 933 MHz | 933 MHz | 933 MHz |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Access Time | 20 ns | 20 ns | 20 ns | 13.75 ns | 20 ns | 20 ns | 20 ns |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
주요 차별점
- Higher data rate than MT41K256M16HA-125:E (vs MT41K256M16HA-125:E)
- Standard temperature grade vs industrial (vs MT41K256M16HA-107IT:E)
- Same package and pinout as cross-brand alternatives (vs IS43TR16256AL-107MBL)
설계 노트
For 933 MHz DDR3L operation, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/command lines. Keep trace lengths matched within 100 mils to minimize skew. Use a solid ground plane and place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin.
The MT41K256M16HA-107AAT:E requires a 1.35V VDD and VDDQ supply. Use a low-noise LDO or a switching regulator with low ripple. Ensure the power supply can handle peak current spikes during refresh and burst operations. Add bulk capacitance (10uF) near the memory device to stabilize the supply.
The device's maximum power dissipation is approximately 1.5W at 933 MHz. With a theta_JA of 20°C/W, the junction temperature rise is 30°C above ambient. Ensure adequate airflow or a heatsink for ambient temperatures above 65°C to keep the case temperature below 95°C.
규정 준수 정보
RoHS compliance confirmed from Micron product page. Other compliance data not specified in the provided data.
