MT53E384M32D2DS-046 - 12Gb LPDDR4 SDRAM 2.133GHz | Micron
Teilenummer: MT53E384M32D2DS-046 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $18.5 | $18,50 |
| 10 | $17.2 | $172,00 |
| 100 | $15.8 | $1.580,00 |
| 500 | $14.6 | $7.300,00 |
| 1.000 | $13.4 | $13.400,00 |
MT53E384M32D2DS-046 Übersicht
LPDDR4 (Low Power Double Data Rate 4) is a JEDEC-defined mobile DRAM standard optimized for low operating voltage and high bandwidth. Within the memory hierarchy, LPDDR4 sits under the SDRAM family of volatile memory ICs and is widely used as main system memory in automotive SoC platforms, mobile devices, and embedded processors that require high throughput with limited power budget.
Key features of the MT53E384M32D2DS include a 12Gbit density in a single-die x32 organization, 1.1V core supply operation, and double-die package (DDP) construction as identified by the D2 die designation. The device is AEC-Q100 qualified and specifically designated by Micron as automotive grade, per the AUT speed-grade suffix in the ordering part number.
Technically, this LPDDR4 device uses a 200-ball fine-pitch ball grid array (WFBGA) footprint of 10 mm x 14.5 mm, which concentrates a high pin count (address, data, DQS strobes, and power) into a compact area. The 046 speed grade denotes operation at the 4266 MT/s data-rate bin (2.133 GHz clock), the highest commonly used LPDDR4 speed bin. The :E suffix denotes Micron's current die revision, an important consideration for firmware and driver compatibility in long-lifecycle automotive programs.
Typical applications include automotive ADAS and infotainment main memory, telematics and gateway modules, industrial vision systems, and high-performance embedded computing where 12 Gbit of volatile memory at 2.133 GHz clock is required alongside AEC-Q100 qualification.
When designing with this component, ensure the memory controller supports the LPDDR4 DDP (double-die package) configuration and the 046 speed bin timing parameters, and follow Micron's layout guidelines for length-matched LPDDR4 fly-by routing and VDDQ decoupling.
This page synthesizes distributor pricing, drop-in same-family alternatives, and practical design notes not found in the manufacturer datasheet, with pricing as of 2026-09-02.
Drop-in-Alternativen für MT53E384M32D2DS-046 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MT53E384M32D2DS-046 (gleiche Bauform und Footprint) – abweichend in Speed Grade, Memory Type, Clock Frequency, Density, Organization.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MT53E384M32D2DS-046 AIT:E
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT53E384M32D2DS-046 AAT:E
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT53E384M32D2DS-046 WT:E
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MT53E384M32D2DS-053 WT:E
✅ Drop-In✓ Auf Lager
$11.3 / Stück
Datenblatt ansehen →MT53E256M32D2DS-046
✅ Drop-In✓ Auf Lager
$9.1 / Stück
Datenblatt ansehen →MT53E384M32D2DS-046 Grenzwerte & elektrische Eigenschaften
| Speichertyp | LPDDR4 SDRAM (Mobile DRAM) |
| Memory Organization | 384M x 32 |
| Density | 12 Gbit |
| Clock Frequency | 2.133 GHz |
| Speed Grade | -046 (4266 MT/s class) |
| Versorgungsspannung | 1.1 V |
| Gehäuse | 200-WFBGA (10 x 14.5 mm) |
| Montageart | Surface Mount |
| Die Configuration | DDP (Double Die Package) |
| Qualification | AEC-Q100, automotive grade (AUT suffix) |
| Die Revision | :E |
| Access Type | Parallel |
| Memory Category | Volatile DRAM |
MT53E384M32D2DS-046 200-wfbga (10 x 14.5 mm) Pinbelegungsleitfaden
Pinbelegung für MT53E384M32D2DS-046 (200-wfbga (10 x 14.5 mm)-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für MT53E384M32D2DS-046.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
MT53E384M32D2DS-046 ist geeignet für 6 Anwendungs: Automotive ADAS Main Memory, Automotive Infotainment and Cockpit, Telematics and Gateway Modules, Industrial Machine Vision, High-Performance Embedded Computing, Medical Imaging and Diagnostics.
Automotive ADAS Main Memory
The MT53E384M32D2DS-046 provides 12Gbit of main memory for ADAS domain controllers, where camera and radar sensor fusion pipelines demand sustained bandwidth. Its 2.133 GHz clock and 384M x 32 organization supply the read throughput that image-processing SoCs require for object detection and path planning. Because the part is AEC-Q100 qualified and carries Micron's automotive designation, it meets the quality expectations of tier-one automotive programs. It is placed as the SoC's LPDDR4 main memory with fly-by routing to the controller; the -046 speed bin ensures timing margin at full controller frequency, while the 1.1V rail keeps memory subsystem power within the thermal budget of sealed automotive enclosures.
Empfohlen
Automotive Infotainment and Cockpit
Digital cockpit and infotainment head units run multiple displays, navigation, and audio streams concurrently, making 12Gbit of LPDDR4 a common main-memory sizing. The MT53E384M32D2DS-046 fits these designs with its 4266 MT/s class bandwidth for GPU frame buffers and its 200-WFBGA (10 x 14.5 mm) outline that fits dense PCB regions near the SoC. AEC-Q100 qualification covers the elevated in-cabin temperature environment. In a typical implementation, the LPDDR4 sits on the SoC memory bus with 1.1V supplied from the PMIC; frame-buffer workloads benefit from the -046 speed bin, and the DDP construction delivers the density without increasing PCB footprint relative to single-die options.
Empfohlen
Telematics and Gateway Modules
Telematics control units and vehicle network gateways aggregate CAN, Ethernet, and cellular traffic, requiring memory that can buffer bursts from multiple interfaces. The MT53E384M32D2DS-046 provides 12Gbit capacity for protocol stacks, OTA update staging, and V2X application data, while its automotive qualification satisfies OEM component approval processes. Its LPDDR4 interface offers far higher bandwidth than legacy LPDDR2/LPDDR3 at lower per-bit power, which matters for always-on telematics that draw power in parked vehicles. Designers typically pair it with an automotive SoC's memory controller and provision the -046 bin so firmware can raise memory frequency in high-load conditions without a redesign.
Empfohlen
Industrial Machine Vision
Industrial vision systems stream multi-megapixel sensor frames into memory for defect inspection and robot guidance. The MT53E384M32D2DS-046's 2.133 GHz clock and 12Gbit capacity allow several frames to be buffered while the processing pipeline works, preventing frame drops in continuous inspection lines. The WT:E grade variant of the same die covers extended industrial temperature requirements, letting one PCB design serve both automotive-adjacent and industrial builds. On the board, the LPDDR4 is placed close to the vision-processing SoC with length-matched traces; the 1.1V supply and LPDDR4 power-down modes reduce idle power between inspection cycles in duty-cycled production equipment.
Empfohlen
High-Performance Embedded Computing
Embedded computing modules and SOMs (system-on-modules) for edge AI inference require dense, fast volatile memory within a small footprint. The MT53E384M32D2DS-046 delivers 12Gbit in a 10 x 14.5 mm 200-ball package, one of the densest LPDDR4 footprints in its class, making it a standard fit for edge inference accelerators processing neural network workloads. The -046 speed bin supplies the bandwidth that keeps NPUs and image signal processors fed with feature maps and weights. Module designers mount the device on the SOM underside or adjacent to the processor; the DDP configuration achieves 12Gbit with a single footprint, and :E die revision firmware support should be validated across the module's production lifetime.
Empfohlen
Medical Imaging and Diagnostics
Portable medical imaging devices such as ultrasound and handheld diagnostics need high-bandwidth memory to acquire, buffer, and process scan data in real time. The MT53E384M32D2DS-046 provides 12Gbit for frame buffering and beamforming pipelines, and its 1.1V LPDDR4 rail extends battery-operated run time compared to older DDR generations. The compact 200-WFBGA package suits handheld probe electronics where board area is constrained by ergonomics. Designs use the LPDDR4 controller integrated in the imaging SoC; the -046 speed bin supports real-time Doppler and 3D reconstruction workloads. Note that this part's automotive designation does not replace the manufacturer's medical qualification process - verify program-specific quality requirements separately.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MT53E384M32D2DS-046 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MT53E384M32D2DS-046 AIT:E | MT53E384M32D2DS-053 WT:E | MT53E256M32D2DS-046 |
|---|---|---|---|---|
| Package | 200-WFBGA (10 x 14.5 mm) | 200-WFBGA (10 x 14.5 mm) - same | 200-WFBGA (10 x 14.5 mm) - same | 200-WFBGA (10 x 14.5 mm) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Density | 12 Gbit | 12 Gbit | 12 Gbit | 8 Gbit |
| Organization | 384M x 32 | 384M x 32 | 384M x 32 | 256M x 32 |
| Speed Grade | -046 | -046 | -053 | -046 |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Typical Application | Automotive ADAS / infotainment main memory | Automotive ADAS main memory | Industrial embedded computing | Cost-optimized mobile/embedded memory |
Wichtigste Unterscheidungsmerkmale
- Highest common LPDDR4 speed bin in same footprint (vs. MT53E384M32D2DS-053 WT:E)
- Automotive designation with AEC-Q100 qualification (vs. MT53E256M32D2DS-046)
- 12Gbit in a compact 10 x 14.5 mm footprint (vs. MT53E1G32D2FW-046)
Designhinweise
LPDDR4 routing in the 200-ball WFBGA (10 x 14.5 mm) footprint demands strict length matching: keep DQS-to-DM/DQ skew within the controller specification (typically a few picoseconds of intra-byte skew budget), and route address/command in fly-by topology with balanced stubs. Place the MT53E384M32D2DS-046 within a few centimeters of the SoC, avoid crossing plane splits under data groups, and use solid adjacent ground planes. Follow Micron's LPDDR4 layout application guidance in the 200-ball datasheet for exact trace impedance (typically 50 ohm single-ended / 100 ohm differential for DQS pairs).
The device operates from a 1.1V LPDDR4 supply. Provide separate, low-impedance VDD and VDDQ decoupling networks close to the package balls: bulk capacitance near the PMIC plus an array of small ceramic capacitors at each supply ball group. Verify your PMIC LPDDR4 rail supports the peak IDD of the -046 speed bin at 2.133 GHz, including simultaneous read/write bursts. Estimated: even at modest utilization, memory subsystem current on this die class can reach the hundreds-of-mA range, so copper thickness and via stitching on power planes should be sized accordingly before thermal sign-off.
Verify die-revision and speed-bin support in your SoC memory controller firmware before substitution: the -046 (2.133 GHz) and -053 parts are pin-compatible but require different timing register sets, and the :E die revision may require updated initialization sequences versus earlier revisions. Automotive suffixes (AUT, AIT, AAT) and industrial suffixes (WT) denote qualification tiers of the same die - do not substitute across qualification tiers in automotive builds without OEM approval. Finally, Micron's datasheet disclaimer warns against using non-automotive-designated parts in automotive applications; this part's AUT designation is what permits automotive use.
Compliance-Informationen
AEC-Q100 qualification confirmed via distributor listings (Microchip USA, DigiKey) and Micron automotive designation (AUT suffix). RoHS/REACH/lead-free status not confirmed in reviewed data - verify via Micron Material Declaration for the exact ordering PN.
