Micron Technology

MT53E384M32D2DS-046 - 12Gb LPDDR4 SDRAM 2.133GHz | Micron

MPN: MT53E384M32D2DS-046 βœ“ Active
In Stock Ships in 1-3 business days
1.1 V Vdss 200-WFBGA (10 x 14.5 mm) Package 2.133 GHz Speed LPDDR4 SDRAM (Mobile DRAM) Memory
From $13.4 USD / Unit
MOQ: 1 |
Price updated: 2026-09-01
Volume Pricing
Qty Unit Price Extended
1 $18.5 $18.50
10 $17.2 $172.00
100 $15.8 $1,580.00
500 $14.6 $7,300.00
1,000 $13.4 $13,400.00
ℹ️ All prices are in USD

Drop-in alternatives for MT53E384M32D2DS-046 β€” same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool β€” Select alternative parts for side-by-side comparison:

MT53E384M32D2DS-046 AIT:E

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πŸ“¦ 200-WFBGA (10 x 14.5 mm)
alternate automotive temperature/grade tier suffix, identical 12Gbit 384M x 32 die, 2.133 GHz clock

πŸ“‹ Reference alternative (not in catalog)

MT53E384M32D2DS-046 AAT:E

βœ… Drop-In
πŸ“¦ 200-WFBGA (10 x 14.5 mm)
alternate automotive grade suffix (AAT), same density/speed/package, 7-distributor availability per Octopart

πŸ“‹ Reference alternative (not in catalog)

MT53E384M32D2DS-046 WT:E

βœ… Drop-In
πŸ“¦ 200-WFBGA (10 x 14.5 mm)
industrial/wide-temperature grade suffix, identical die and pinout

πŸ“‹ Reference alternative (not in catalog)

MT53E384M32D2DS-053 WT:E

βœ… Drop-In
Micron Technology
πŸ“¦ 200-WFBGA (10 x 14.5 mm)
Mobile LPDDR4 SDRAM Β· 12 Gbit Β· 384M x 32 Β· 1866 Mbps (1.866 GHz) Β· -053 Β· DDP (Double Die Package) Β· 200-WFBGA (10 x 14.5 mm) Β· Surface Mount

βœ“ In Stock

$11.3 / Unit

View Datasheet β†’

MT53E256M32D2DS-046

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Micron Technology
πŸ“¦ 200-WFBGA (10 x 14.5 mm)
LPDDR4 SDRAM (Mobile DRAM) Β· 8 Gbit Β· 256M x 32 Β· 2133 MHz Β· [DATA_NEEDED: data rate] Β· 1.1 V Β· [DATA_NEEDED: VDDQ voltage] Β· 200-WFBGA (10 x 14.5 mm)

βœ“ In Stock

$9.1 / Unit

View Datasheet β†’

MT53E384M32D2DS-046 Maximum Ratings & Electrical Characteristics

Memory Type LPDDR4 SDRAM (Mobile DRAM)
Memory Organization 384M x 32
Density 12 Gbit
Clock Frequency 2.133 GHz
Speed Grade -046 (4266 MT/s class)
Supply Voltage 1.1 V
Package 200-WFBGA (10 x 14.5 mm)
Mounting Type Surface Mount
Die Configuration DDP (Double Die Package)
Qualification AEC-Q100, automotive grade (AUT suffix)
Die Revision :E
Access Type Parallel
Memory Category Volatile DRAM

MT53E384M32D2DS-046 200-wfbga (10 x 14.5 mm) Pin Configuration Guide

Complete pinout information for MT53E384M32D2DS-046 (200-wfbga (10 x 14.5 mm) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

200-wfbga (10 x 14.5 mm) package pinout diagram for MT53E384M32D2DS-046

No detailed pinout data available for MT53E384M32D2DS-046.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for MT53E384M32D2DS-046 Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

MT53E384M32D2DS-046 is suitable for 6 applications: Automotive ADAS Main Memory, Automotive Infotainment and Cockpit, Telematics and Gateway Modules, Industrial Machine Vision, High-Performance Embedded Computing, Medical Imaging and Diagnostics.

πŸš—

Automotive ADAS Main Memory

The MT53E384M32D2DS-046 provides 12Gbit of main memory for ADAS domain controllers, where camera and radar sensor fusion pipelines demand sustained bandwidth. Its 2.133 GHz clock and 384M x 32 organization supply the read throughput that image-processing SoCs require for object detection and path planning. Because the part is AEC-Q100 qualified and carries Micron's automotive designation, it meets the quality expectations of tier-one automotive programs. It is placed as the SoC's LPDDR4 main memory with fly-by routing to the controller; the -046 speed bin ensures timing margin at full controller frequency, while the 1.1V rail keeps memory subsystem power within the thermal budget of sealed automotive enclosures.

πŸ“Ί

Automotive Infotainment and Cockpit

Digital cockpit and infotainment head units run multiple displays, navigation, and audio streams concurrently, making 12Gbit of LPDDR4 a common main-memory sizing. The MT53E384M32D2DS-046 fits these designs with its 4266 MT/s class bandwidth for GPU frame buffers and its 200-WFBGA (10 x 14.5 mm) outline that fits dense PCB regions near the SoC. AEC-Q100 qualification covers the elevated in-cabin temperature environment. In a typical implementation, the LPDDR4 sits on the SoC memory bus with 1.1V supplied from the PMIC; frame-buffer workloads benefit from the -046 speed bin, and the DDP construction delivers the density without increasing PCB footprint relative to single-die options.

🌐

Telematics and Gateway Modules

Telematics control units and vehicle network gateways aggregate CAN, Ethernet, and cellular traffic, requiring memory that can buffer bursts from multiple interfaces. The MT53E384M32D2DS-046 provides 12Gbit capacity for protocol stacks, OTA update staging, and V2X application data, while its automotive qualification satisfies OEM component approval processes. Its LPDDR4 interface offers far higher bandwidth than legacy LPDDR2/LPDDR3 at lower per-bit power, which matters for always-on telematics that draw power in parked vehicles. Designers typically pair it with an automotive SoC's memory controller and provision the -046 bin so firmware can raise memory frequency in high-load conditions without a redesign.

🏭

Industrial Machine Vision

Industrial vision systems stream multi-megapixel sensor frames into memory for defect inspection and robot guidance. The MT53E384M32D2DS-046's 2.133 GHz clock and 12Gbit capacity allow several frames to be buffered while the processing pipeline works, preventing frame drops in continuous inspection lines. The WT:E grade variant of the same die covers extended industrial temperature requirements, letting one PCB design serve both automotive-adjacent and industrial builds. On the board, the LPDDR4 is placed close to the vision-processing SoC with length-matched traces; the 1.1V supply and LPDDR4 power-down modes reduce idle power between inspection cycles in duty-cycled production equipment.

πŸ–₯️

High-Performance Embedded Computing

Embedded computing modules and SOMs (system-on-modules) for edge AI inference require dense, fast volatile memory within a small footprint. The MT53E384M32D2DS-046 delivers 12Gbit in a 10 x 14.5 mm 200-ball package, one of the densest LPDDR4 footprints in its class, making it a standard fit for edge inference accelerators processing neural network workloads. The -046 speed bin supplies the bandwidth that keeps NPUs and image signal processors fed with feature maps and weights. Module designers mount the device on the SOM underside or adjacent to the processor; the DDP configuration achieves 12Gbit with a single footprint, and :E die revision firmware support should be validated across the module's production lifetime.

πŸ’Š

Medical Imaging and Diagnostics

Portable medical imaging devices such as ultrasound and handheld diagnostics need high-bandwidth memory to acquire, buffer, and process scan data in real time. The MT53E384M32D2DS-046 provides 12Gbit for frame buffering and beamforming pipelines, and its 1.1V LPDDR4 rail extends battery-operated run time compared to older DDR generations. The compact 200-WFBGA package suits handheld probe electronics where board area is constrained by ergonomics. Designs use the LPDDR4 controller integrated in the imaging SoC; the -046 speed bin supports real-time Doppler and 3D reconstruction workloads. Note that this part's automotive designation does not replace the manufacturer's medical qualification process - verify program-specific quality requirements separately.

What is the MT53E384M32D2DS-046 and what are its key specifications?
The MT53E384M32D2DS-046 is a Micron 12Gbit automotive-grade LPDDR4 SDRAM organized as 384M x 32. It operates at a 2.133 GHz clock, uses a 1.1V supply, and is housed in a 200-ball WFBGA (10 x 14.5 mm) package. According to Micron's part detail page and distributor listings, it is AEC-Q100 qualified and uses a double-die package (DDP) construction with the :E die revision.
Where can I buy MT53E384M32D2DS-046 online and what is the price?
The MT53E384M32D2DS-046 AUT:E is available from major distributors including DigiKey (ships today per listing), Mouser, and secondary distributors such as Ampheo and Avaq. Octopart lists the AAT:E variant across 7 distributors for price comparison. Pricing on this page is quoted as of 2026-09-02; for volume quotes above 1000 units, request a quote from XAIPART for current market pricing on this automotive LPDDR4 component.
Is MT53E384M32D2DS-046 in stock and what is the lead time?
Stock varies by speed-grade suffix: DigiKey lists the AUT:E variant as buy-now, ships today, and icDirectory reported 17,700 pcs of the AAT:E TR variant in stock as of July 2026. Exact lead times change frequently for automotive-grade LPDDR4 due to allocation cycles. Confirm current inventory and lead time with your distributor or request a quote from XAIPART before committing to a production schedule.
What is the difference between MT53E384M32D2DS-046 AUT:E and AIT:E?
Both are the same 12Gbit LPDDR4 die in the same 200-WFBGA package; the middle letter indicates the operating temperature/grade tier within Micron's automotive ordering scheme (A-U-T versus A-I-T). The AUT:E is the standard automotive-grade option listed as ships-today at DigiKey, while the AIT:E is the companion industrial/automotive temperature tier. Both share identical density (384M x 32), 2.133 GHz clock, and AEC-Q100 qualification, making them footprint-compatible substitutes subject to your temperature requirements.
MT53E384M32D2DS-046 vs MT53E384M32D2DS-053 - which should I choose?
The difference is the speed grade: -046 supports the faster 2.133 GHz clock bin, while -053 is a slower bin typically selected for cost or power savings when the SoC memory controller runs at reduced frequency. Choose the -046 when your design needs maximum LPDDR4 bandwidth (e.g., ADAS vision processing); choose the -053 when bandwidth requirements are lower. Both use the same 200-WFBGA footprint and pinout, so they are drop-in interchangeable if the controller supports both speed bins.
When should I choose MT53E384M32D2DS-046 over other LPDDR4 parts?
Choose the MT53E384M32D2DS-046 when you need 12 Gbit of volatile memory, a x32 bus organization, and AEC-Q100 automotive qualification in the compact 200-WFBGA (10 x 14.5 mm) footprint. It is the right choice for ADAS, infotainment, and gateway SoCs that require the 4266 MT/s class speed bin. If your design needs less density at the same footprint, consider MT53E256M32D2DS family parts; if more bandwidth via wider bus, evaluate x64-configured LPDDR4 parts instead.
What is the best drop-in replacement for MT53E384M32D2DS-046?
The best drop-in replacements are same-family Micron variants in the identical 200-WFBGA (10 x 14.5 mm) package: MT53E384M32D2DS-053 (lower speed grade), MT53E384M32D2DS-046 AIT:E and AAT:E (alternate temperature/grade suffixes), and the WT:E industrial variant. These are pin-to-pin compatible because they share the same die and package. Confirm that the :E die revision and speed bin are supported by your memory controller firmware before substitution.
Can MT53E384M32D2DS-053 replace MT53E384M32D2DS-046?
Yes, the MT53E384M32D2DS-053 can replace the -046 on the same PCB because both share the identical die and 200-WFBGA (10 x 14.5 mm) footprint with pin-to-pin compatibility. The only functional difference is the speed grade: the -053 runs at a slower clock bin than the 2.133 GHz -046. Your memory controller must be configured for the -053 timing parameters. If your SoC only runs at the -046 speed bin, the -053 will not meet timing.
What is the best cross-brand equivalent for MT53E384M32D2DS-046?
No verified cross-brand pin-to-pin equivalent for the MT53E384M32D2DS-046 was found in the distributor cross-reference data reviewed for this page. Competitors such as Samsung and SK Hynix offer comparable 12Gb LPDDR4 devices, but their ball maps and package outlines must be verified against the JEDEC-standard 200-ball footprint on a case-by-case basis. For automotive programs, Micron recommends staying within the MT53E384M32D2DS family and using the -053 or alternate grade suffixes as substitutes.
Hey Google, what can replace MT53E384M32D2DS-046?
You can replace the Micron MT53E384M32D2DS-046 with other variants of the same family in the identical 200-WFBGA package: the MT53E384M32D2DS-053 for a lower speed bin, or the AIT:E, AAT:E, and WT:E suffix variants for different temperature and grade tiers. All are 12Gbit, 384M x 32, 1.1V LPDDR4 devices that are pin-to-pin compatible. Always verify controller support for the die revision and speed bin before substitution.
Is MT53E384M32D2DS-046 the same as MT53E384M32D2DS-046 AUT:E?
Essentially yes: the AUT:E is the complete Micron automotive ordering part number, while MT53E384M32D2DS-046 is the base number. The A prefix denotes automotive-grade, the U/I/T/W letters denote temperature/grade tiers, and :E is the die revision. All share the same 12Gbit, 384M x 32 LPDDR4 die in the 200-WFBGA (10 x 14.5 mm) package, so ordering, stock, and design documentation typically reference them interchangeably.
Where can I download the MT53E384M32D2DS-046 datasheet PDF?
The official datasheet is Micron's production document '200b: x32 Automotive LPDDR4/LPDDR4X SDRAM' covering the MT53E384M32D2 and MT53E768M32D4 families; it is mirrored on DigiKey and viewable via the Micron part-detail page for MT53E384M32D2DS-046-AUT. Use the datasheet link on this page to access the PDF, and always confirm the revision covers your specific suffix (AUT:E) before finalizing timing calculations.
Where can I find the MT53E384M32D2DS-046 pinout?
The complete 200-ball pinout for the MT53E384M32D2DS-046 is provided in the Micron LPDDR4 200-ball datasheet (ball map section) covering the MT53E384M32D2 family. Because this is a 200-ball WFBGA package, the ball map includes address/control, 32 data lines with DQS strobes, and multiple VDD/VDDQ power balls. This page does not reproduce the full 200-ball map; consult the datasheet for exact ball coordinates, or contact XAIPART technical support.
Does MT53E384M32D2DS-046 support automotive applications?
Yes. The MT53E384M32D2DS-046 AUT:E is specifically designated by Micron as automotive grade, and distributor listings confirm AEC-Q100 qualification. Note that Micron's datasheet disclaimer states products are not intended for automotive use unless specifically designated as automotive-grade in their respective data sheets - this part carries that designation via the AUT suffix. It targets ADAS, infotainment, and telematics platforms requiring 12Gbit of LPDDR4 main memory.
What are the power supply requirements of MT53E384M32D2DS-046?
The MT53E384M32D2DS-046 operates from a 1.1V supply per distributor specifications, consistent with the LPDDR4 standard's low-voltage rail. In practice, LPDDR4 designs provide separate 1.1V VDD and VDDQ rails with dedicated decoupling, and many SoC platforms use an integrated PMIC LPDDR4 rail. Consult the Micron 200-ball LPDDR4 datasheet for the exact per-ball supply definitions, IDD specifications, and power-down/self-refresh current figures for your power budget analysis.
Is the MT53E384M32D2DS-046 RoHS compliant and lead-free?
Micron's current-generation LPDDR4 products are generally RoHS compliant and lead-free, but the specific compliance status for the MT53E384M32D2DS-046 AUT:E was not confirmed in the data reviewed for this page, so it is marked unknown here. Verify compliance on the official Micron part-detail page or the distributor product page, which carry Material Declaration and RoHS/REACH certificates for the exact ordering part number before release to production.

Engineering reference data for MT53E384M32D2DS-046 β€” comparison, design guidance, and compliance information.

Selection Guide

Choose the MT53E384M32D2DS-046 AUT:E when your automotive SoC needs 12Gbit of main memory at the fastest common LPDDR4 speed bin in the 200-WFBGA (10 x 14.5 mm) footprint - typical for ADAS and infotainment platforms. Choose the -053 WT:E if your controller runs at a lower frequency and you want the same die at reduced cost, accepting lower bandwidth. Choose the WT:E or AIT:E/AAT:E suffix variants of the same -046 die when your program requires a different temperature or qualification tier - all share the identical pinout. If 12Gbit exceeds your capacity need, MT53E256M32D2DS-046 reduces cost with 8Gbit in the same footprint, but verify its qualification status and density fit. If you need substantially more memory, step up to the 32Gbit MT53E1G32D2FW-046 in the larger TFBGA package. Trade-off summary: this part maximizes bandwidth-per-square-millimeter in its class; alternatives trade speed, density, or qualification tier for cost.

Comparison with Alternatives

Parameter This Product MT53E384M32D2DS-046 AIT:E MT53E384M32D2DS-053 WT:E MT53E256M32D2DS-046
Package 200-WFBGA (10 x 14.5 mm) 200-WFBGA (10 x 14.5 mm) - same 200-WFBGA (10 x 14.5 mm) - same 200-WFBGA (10 x 14.5 mm) - same
Brand Micron Technology Micron Technology Micron Technology Micron Technology
Density 12 Gbit 12 Gbit 12 Gbit 8 Gbit
Organization 384M x 32 384M x 32 384M x 32 256M x 32
Clock Frequency 2.133 GHz 2.133 GHz [DATA_NEEDED] 2.133 GHz
Speed Grade -046 -046 -053 -046
Supply Voltage 1.1 V 1.1 V 1.1 V 1.1 V
Automotive Qualification AEC-Q100 (AUT suffix) AEC-Q100 (automotive suffix) WT (industrial/wide-temp) [DATA_NEEDED]
Die Revision :E :E :E [DATA_NEEDED]
Typical Application Automotive ADAS / infotainment main memory Automotive ADAS main memory Industrial embedded computing Cost-optimized mobile/embedded memory

Key Differentiators

  • Highest common LPDDR4 speed bin in same footprint (vs MT53E384M32D2DS-053 WT:E)
  • Automotive designation with AEC-Q100 qualification (vs MT53E256M32D2DS-046)
  • 12Gbit in a compact 10 x 14.5 mm footprint (vs MT53E1G32D2FW-046)

Design Notes

LPDDR4 routing in the 200-ball WFBGA (10 x 14.5 mm) footprint demands strict length matching: keep DQS-to-DM/DQ skew within the controller specification (typically a few picoseconds of intra-byte skew budget), and route address/command in fly-by topology with balanced stubs. Place the MT53E384M32D2DS-046 within a few centimeters of the SoC, avoid crossing plane splits under data groups, and use solid adjacent ground planes. Follow Micron's LPDDR4 layout application guidance in the 200-ball datasheet for exact trace impedance (typically 50 ohm single-ended / 100 ohm differential for DQS pairs).

The device operates from a 1.1V LPDDR4 supply. Provide separate, low-impedance VDD and VDDQ decoupling networks close to the package balls: bulk capacitance near the PMIC plus an array of small ceramic capacitors at each supply ball group. Verify your PMIC LPDDR4 rail supports the peak IDD of the -046 speed bin at 2.133 GHz, including simultaneous read/write bursts. Estimated: even at modest utilization, memory subsystem current on this die class can reach the hundreds-of-mA range, so copper thickness and via stitching on power planes should be sized accordingly before thermal sign-off.

Verify die-revision and speed-bin support in your SoC memory controller firmware before substitution: the -046 (2.133 GHz) and -053 parts are pin-compatible but require different timing register sets, and the :E die revision may require updated initialization sequences versus earlier revisions. Automotive suffixes (AUT, AIT, AAT) and industrial suffixes (WT) denote qualification tiers of the same die - do not substitute across qualification tiers in automotive builds without OEM approval. Finally, Micron's datasheet disclaimer warns against using non-automotive-designated parts in automotive applications; this part's AUT designation is what permits automotive use.

Compliance Information

RoHS
Unknown
REACH
Unknown
AEC-Q100
Qualified
Lead Free
Unknown
Halogen Free
Unknown
Conflict Minerals
Unknown

AEC-Q100 qualification confirmed via distributor listings (Microchip USA, DigiKey) and Micron automotive designation (AUT suffix). RoHS/REACH/lead-free status not confirmed in reviewed data - verify via Micron Material Declaration for the exact ordering PN.

Data verified on: 2026-09-02 β€” data verified and curated by XAIPART's component engineering team

Related Searches

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Related Components & Terms

Micron Technology MT53E384M32D2DS-046 MT53E384M32D2DS-053 MT53E256M32D2DS-046 MT53E1G32D2FW-046 LPDDR4 Low Power Double Data Rate 4 SDRAM DRAM volatile memory IC 200-WFBGA fine-pitch ball grid array AEC-Q100 DDP (Double Die Package) automotive memory ADAS infotainment memory controller JEDEC LPDDR4 standard RoHS 4266 MT/s speed bin 1.1V supply voltage
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