MT53E384M32D2DS-046 - 12Gb LPDDR4 SDRAM 2.133GHz | Micron
N.º de pieza: MT53E384M32D2DS-046 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $18.5 | $18,50 |
| 10 | $17.2 | $172,00 |
| 100 | $15.8 | $1.580,00 |
| 500 | $14.6 | $7.300,00 |
| 1.000 | $13.4 | $13.400,00 |
MT53E384M32D2DS-046 Descripción general
LPDDR4 (Low Power Double Data Rate 4) is a JEDEC-defined mobile DRAM standard optimized for low operating voltage and high bandwidth. Within the memory hierarchy, LPDDR4 sits under the SDRAM family of volatile memory ICs and is widely used as main system memory in automotive SoC platforms, mobile devices, and embedded processors that require high throughput with limited power budget.
Key features of the MT53E384M32D2DS include a 12Gbit density in a single-die x32 organization, 1.1V core supply operation, and double-die package (DDP) construction as identified by the D2 die designation. The device is AEC-Q100 qualified and specifically designated by Micron as automotive grade, per the AUT speed-grade suffix in the ordering part number.
Technically, this LPDDR4 device uses a 200-ball fine-pitch ball grid array (WFBGA) footprint of 10 mm x 14.5 mm, which concentrates a high pin count (address, data, DQS strobes, and power) into a compact area. The 046 speed grade denotes operation at the 4266 MT/s data-rate bin (2.133 GHz clock), the highest commonly used LPDDR4 speed bin. The :E suffix denotes Micron's current die revision, an important consideration for firmware and driver compatibility in long-lifecycle automotive programs.
Typical applications include automotive ADAS and infotainment main memory, telematics and gateway modules, industrial vision systems, and high-performance embedded computing where 12 Gbit of volatile memory at 2.133 GHz clock is required alongside AEC-Q100 qualification.
When designing with this component, ensure the memory controller supports the LPDDR4 DDP (double-die package) configuration and the 046 speed bin timing parameters, and follow Micron's layout guidelines for length-matched LPDDR4 fly-by routing and VDDQ decoupling.
This page synthesizes distributor pricing, drop-in same-family alternatives, and practical design notes not found in the manufacturer datasheet, with pricing as of 2026-09-02.
Alternativas directas para MT53E384M32D2DS-046 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MT53E384M32D2DS-046 (mismo factor de forma y huella) — difiere en Speed Grade, Memory Type, Clock Frequency, Density, Organization.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MT53E384M32D2DS-046 AIT:E
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MT53E384M32D2DS-046 AAT:E
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MT53E384M32D2DS-046 WT:E
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MT53E384M32D2DS-053 WT:E
✅ Sustitución directa✓ En stock
$11.3 / unidad
Ver hoja de datos →MT53E256M32D2DS-046
✅ Sustitución directa✓ En stock
$9.1 / unidad
Ver hoja de datos →MT53E384M32D2DS-046 Valores máximos y características eléctricas
| Tipo de memoria | LPDDR4 SDRAM (Mobile DRAM) |
| Memory Organization | 384M x 32 |
| Density | 12 Gbit |
| Clock Frequency | 2.133 GHz |
| Speed Grade | -046 (4266 MT/s class) |
| Tensión de alimentación | 1.1 V |
| Encapsulado | 200-WFBGA (10 x 14.5 mm) |
| Tipo de montaje | Surface Mount |
| Die Configuration | DDP (Double Die Package) |
| Qualification | AEC-Q100, automotive grade (AUT suffix) |
| Die Revision | :E |
| Access Type | Parallel |
| Memory Category | Volatile DRAM |
Guía de configuración de pines de MT53E384M32D2DS-046 200-wfbga (10 x 14.5 mm)
Configuración de pines para MT53E384M32D2DS-046 (encapsulado 200-wfbga (10 x 14.5 mm)). Este CI digital incluye GPIO, interfaces de comunicación (UART, SPI, I2C) y pines de alimentación. Consulte la hoja de datos del fabricante para conocer las funciones alternativas de los pines y las opciones de configuración. Esencial para el diseño de sistemas embebidos y el diseño de PCB.
No hay datos detallados de patillaje disponibles para MT53E384M32D2DS-046.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
MT53E384M32D2DS-046 es adecuado para 6 aplicacións: Automotive ADAS Main Memory, Automotive Infotainment and Cockpit, Telematics and Gateway Modules, Industrial Machine Vision, High-Performance Embedded Computing, Medical Imaging and Diagnostics.
Automotive ADAS Main Memory
The MT53E384M32D2DS-046 provides 12Gbit of main memory for ADAS domain controllers, where camera and radar sensor fusion pipelines demand sustained bandwidth. Its 2.133 GHz clock and 384M x 32 organization supply the read throughput that image-processing SoCs require for object detection and path planning. Because the part is AEC-Q100 qualified and carries Micron's automotive designation, it meets the quality expectations of tier-one automotive programs. It is placed as the SoC's LPDDR4 main memory with fly-by routing to the controller; the -046 speed bin ensures timing margin at full controller frequency, while the 1.1V rail keeps memory subsystem power within the thermal budget of sealed automotive enclosures.
Recomendado
Automotive Infotainment and Cockpit
Digital cockpit and infotainment head units run multiple displays, navigation, and audio streams concurrently, making 12Gbit of LPDDR4 a common main-memory sizing. The MT53E384M32D2DS-046 fits these designs with its 4266 MT/s class bandwidth for GPU frame buffers and its 200-WFBGA (10 x 14.5 mm) outline that fits dense PCB regions near the SoC. AEC-Q100 qualification covers the elevated in-cabin temperature environment. In a typical implementation, the LPDDR4 sits on the SoC memory bus with 1.1V supplied from the PMIC; frame-buffer workloads benefit from the -046 speed bin, and the DDP construction delivers the density without increasing PCB footprint relative to single-die options.
Recomendado
Telematics and Gateway Modules
Telematics control units and vehicle network gateways aggregate CAN, Ethernet, and cellular traffic, requiring memory that can buffer bursts from multiple interfaces. The MT53E384M32D2DS-046 provides 12Gbit capacity for protocol stacks, OTA update staging, and V2X application data, while its automotive qualification satisfies OEM component approval processes. Its LPDDR4 interface offers far higher bandwidth than legacy LPDDR2/LPDDR3 at lower per-bit power, which matters for always-on telematics that draw power in parked vehicles. Designers typically pair it with an automotive SoC's memory controller and provision the -046 bin so firmware can raise memory frequency in high-load conditions without a redesign.
Recomendado
Industrial Machine Vision
Industrial vision systems stream multi-megapixel sensor frames into memory for defect inspection and robot guidance. The MT53E384M32D2DS-046's 2.133 GHz clock and 12Gbit capacity allow several frames to be buffered while the processing pipeline works, preventing frame drops in continuous inspection lines. The WT:E grade variant of the same die covers extended industrial temperature requirements, letting one PCB design serve both automotive-adjacent and industrial builds. On the board, the LPDDR4 is placed close to the vision-processing SoC with length-matched traces; the 1.1V supply and LPDDR4 power-down modes reduce idle power between inspection cycles in duty-cycled production equipment.
Recomendado
High-Performance Embedded Computing
Embedded computing modules and SOMs (system-on-modules) for edge AI inference require dense, fast volatile memory within a small footprint. The MT53E384M32D2DS-046 delivers 12Gbit in a 10 x 14.5 mm 200-ball package, one of the densest LPDDR4 footprints in its class, making it a standard fit for edge inference accelerators processing neural network workloads. The -046 speed bin supplies the bandwidth that keeps NPUs and image signal processors fed with feature maps and weights. Module designers mount the device on the SOM underside or adjacent to the processor; the DDP configuration achieves 12Gbit with a single footprint, and :E die revision firmware support should be validated across the module's production lifetime.
Recomendado
Medical Imaging and Diagnostics
Portable medical imaging devices such as ultrasound and handheld diagnostics need high-bandwidth memory to acquire, buffer, and process scan data in real time. The MT53E384M32D2DS-046 provides 12Gbit for frame buffering and beamforming pipelines, and its 1.1V LPDDR4 rail extends battery-operated run time compared to older DDR generations. The compact 200-WFBGA package suits handheld probe electronics where board area is constrained by ergonomics. Designs use the LPDDR4 controller integrated in the imaging SoC; the -046 speed bin supports real-time Doppler and 3D reconstruction workloads. Note that this part's automotive designation does not replace the manufacturer's medical qualification process - verify program-specific quality requirements separately.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MT53E384M32D2DS-046 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MT53E384M32D2DS-046 AIT:E | MT53E384M32D2DS-053 WT:E | MT53E256M32D2DS-046 |
|---|---|---|---|---|
| Package | 200-WFBGA (10 x 14.5 mm) | 200-WFBGA (10 x 14.5 mm) - same | 200-WFBGA (10 x 14.5 mm) - same | 200-WFBGA (10 x 14.5 mm) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Density | 12 Gbit | 12 Gbit | 12 Gbit | 8 Gbit |
| Organization | 384M x 32 | 384M x 32 | 384M x 32 | 256M x 32 |
| Speed Grade | -046 | -046 | -053 | -046 |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Typical Application | Automotive ADAS / infotainment main memory | Automotive ADAS main memory | Industrial embedded computing | Cost-optimized mobile/embedded memory |
Diferenciadores clave
- Highest common LPDDR4 speed bin in same footprint (frente a MT53E384M32D2DS-053 WT:E)
- Automotive designation with AEC-Q100 qualification (frente a MT53E256M32D2DS-046)
- 12Gbit in a compact 10 x 14.5 mm footprint (frente a MT53E1G32D2FW-046)
Notas de diseño
LPDDR4 routing in the 200-ball WFBGA (10 x 14.5 mm) footprint demands strict length matching: keep DQS-to-DM/DQ skew within the controller specification (typically a few picoseconds of intra-byte skew budget), and route address/command in fly-by topology with balanced stubs. Place the MT53E384M32D2DS-046 within a few centimeters of the SoC, avoid crossing plane splits under data groups, and use solid adjacent ground planes. Follow Micron's LPDDR4 layout application guidance in the 200-ball datasheet for exact trace impedance (typically 50 ohm single-ended / 100 ohm differential for DQS pairs).
The device operates from a 1.1V LPDDR4 supply. Provide separate, low-impedance VDD and VDDQ decoupling networks close to the package balls: bulk capacitance near the PMIC plus an array of small ceramic capacitors at each supply ball group. Verify your PMIC LPDDR4 rail supports the peak IDD of the -046 speed bin at 2.133 GHz, including simultaneous read/write bursts. Estimated: even at modest utilization, memory subsystem current on this die class can reach the hundreds-of-mA range, so copper thickness and via stitching on power planes should be sized accordingly before thermal sign-off.
Verify die-revision and speed-bin support in your SoC memory controller firmware before substitution: the -046 (2.133 GHz) and -053 parts are pin-compatible but require different timing register sets, and the :E die revision may require updated initialization sequences versus earlier revisions. Automotive suffixes (AUT, AIT, AAT) and industrial suffixes (WT) denote qualification tiers of the same die - do not substitute across qualification tiers in automotive builds without OEM approval. Finally, Micron's datasheet disclaimer warns against using non-automotive-designated parts in automotive applications; this part's AUT designation is what permits automotive use.
Información de cumplimiento
AEC-Q100 qualification confirmed via distributor listings (Microchip USA, DigiKey) and Micron automotive designation (AUT suffix). RoHS/REACH/lead-free status not confirmed in reviewed data - verify via Micron Material Declaration for the exact ordering PN.
