RS512M16Z2DD-62DT - 8Gbit DDR4 SDRAM 512Mx16 | Rayson
Teilenummer: RS512M16Z2DD-62DT ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $42.44 | $42,44 |
| 10 | $38.2 | $382,00 |
| 100 | $34.2 | $3.420,00 |
| 500 | $32.5 | $16.250,00 |
| 1.000 | $30.8 | $30.800,00 |
RS512M16Z2DD-62DT Übersicht
DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, succeeding DDR3. It achieves higher speed and lower power consumption through a prefetch of 8n, a lower operating voltage of 1.2V, and improved signal integrity features such as on-die termination (ODT) and write leveling. DDR4 is a key component in modern computing systems, serving as the main memory for processors, and is also used in networking equipment, servers, and high-performance embedded designs.
Key features of the RS512M16Z2DD-62DT include an operating temperature range of 0°C to +95°C, a supply voltage of 1.14V to 1.26V for VDD and 2.375V to 2.75V for VDDQ, and a clock frequency of 1.6GHz. It supports auto self-refresh, auto precharge, asynchronous reset, data mask, CRC, dynamic on-chip termination, ZQ calibration, and write leveling functions. These features ensure reliable operation and data integrity in demanding environments.
The device utilizes advanced DDR4 architecture with a 16-bit I/O interface, enabling high-bandwidth data transfer. The FBGA-96 package provides excellent thermal and electrical performance, with a ball pitch that supports high-density PCB routing. The 512Mx16 organization is ideal for applications requiring large memory capacity with a moderate bus width, balancing density and pin count.
Typical applications include industrial automation controllers, telecommunications infrastructure, edge computing gateways, and embedded systems that require high-speed, reliable memory. The wide temperature range and robust feature set make it suitable for harsh environments where standard commercial memory might fail.
When designing with this DDR4 device, ensure proper termination and signal integrity practices are followed, including controlled impedance traces and appropriate on-die termination settings. The ZQ calibration pin must be connected to a 240-ohm resistor to ground for proper calibration.
Drop-in-Alternativen für RS512M16Z2DD-62DT – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MT40A512M16TB-062E
✓ Auf Lager
$60 / Stück
Datenblatt ansehen →K4A8G165WC-BCRC
✓ Auf Lager
$23 / Stück
Datenblatt ansehen →H5AN8G6NCJR-VKC
✓ Auf Lager
$60 / Stück
Datenblatt ansehen →MT40A512M16JY-075E
✓ Auf Lager
$30.5 / Stück
Datenblatt ansehen →K4A8G165WB-BCWE
✓ Auf Lager
$6.55 / Stück
Datenblatt ansehen →RS512M16Z2DD-62DT Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR4 SDRAM |
| Speicherorganisation | 512M x 16 |
| Total Density | 8 Gbit |
| Datenrate | 3200 Mb/s/pin |
| CAS-Latenz | 22 |
| tRCD (min) | 13.75 ns |
| tRP (min) | 13.75 ns |
| tRAS (min) | 32 ns |
| tRC (min) | 45.75 ns |
| tCK (min) | 0.625 ns |
| Betriebstemperaturbereich | 0°C to +95°C |
| Supply Voltage (VDD) | 1.14V to 1.26V |
| Supply Voltage (VDDQ) | 2.375V to 2.75V |
| Clock Frequency | 1.6 GHz |
| Gehäuse | FBGA-96 (7.5x13 mm) |
| RoHS-Status | Compliant |
RS512M16Z2DD-62DT Pin-Konfiguration
| Pin A1 | VDD — Power supply |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin A5 | DQ2 — Data input/output 2 |
| Pin A6 | DQ3 — Data input/output 3 |
| Pin A7 | VDD — Power supply |
| Pin A8 | DQ4 — Data input/output 4 |
| Pin A9 | DQ5 — Data input/output 5 |
| Pin A10 | VSS — Ground |
| Pin A11 | DQ6 — Data input/output 6 |
| Pin A12 | DQ7 — Data input/output 7 |
| Pin B1 | VDDQ — Power supply for output buffers |
| Pin B2 | DQ8 — Data input/output 8 |
| Pin B3 | DQ9 — Data input/output 9 |
| Pin B4 | VSSQ — Ground for output buffers |
| Pin B5 | DQ10 — Data input/output 10 |
| Pin B6 | DQ11 — Data input/output 11 |
| Pin B7 | VDDQ — Power supply for output buffers |
| Pin B8 | DQ12 — Data input/output 12 |
| Pin B9 | DQ13 — Data input/output 13 |
| Pin B10 | VSSQ — Ground for output buffers |
| Pin B11 | DQ14 — Data input/output 14 |
| Pin B12 | DQ15 — Data input/output 15 |
Typische Anwendungen
RS512M16Z2DD-62DT ist geeignet für 6 Anwendungs: Industrial Automation, Telecommunications, Edge Computing, Embedded Systems, Networking Equipment, Server and Storage.
Industrial Automation
The RS512M16Z2DD-62DT provides high-density, high-speed memory for industrial controllers and PLCs. Its 8Gbit capacity and DDR4-3200 speed enable fast data processing and real-time control. The 0°C to +95°C temperature range ensures reliable operation in factory environments. With features like CRC and write leveling, it maintains data integrity in noisy industrial settings. It can be paired with industrial-grade microcontrollers like STM32F767BGT6 for control logic.
Empfohlen
Telecommunications
In telecommunications infrastructure, the RS512M16Z2DD-62DT offers the bandwidth and reliability needed for network processing. Its 3200 Mb/s/pin data rate supports high-throughput packet processing and buffering. The auto self-refresh and dynamic on-chip termination features help maintain signal integrity in high-speed systems. It is suitable for use in routers, switches, and base stations, where consistent performance is critical. Companion devices like the XC7Z020 FPGA can manage data flow.
Empfohlen
Edge Computing
Edge computing devices require high-capacity, low-latency memory to process data locally. The RS512M16Z2DD-62DT's 8Gbit density and DDR4-3200 speed enable efficient handling of AI inference and data analytics at the edge. Its wide temperature range supports deployment in outdoor or remote locations. The device's low power consumption (1.2V VDD) is beneficial for power-constrained edge nodes. It can be paired with processors like the STM32MP1 series for compute-intensive tasks.
Empfohlen
Embedded Systems
For embedded systems requiring large memory footprints, the RS512M16Z2DD-62DT provides 8Gbit of DDR4 in a compact FBGA-96 package. Its 512Mx16 organization is ideal for applications needing high density with a moderate bus width. The device supports features like data mask and asynchronous reset, which are useful in embedded designs. It operates reliably over 0°C to +95°C, making it suitable for various embedded applications. It can be used with MCUs like the STM32F429IIT6 for high-performance embedded designs.
Empfohlen
Networking Equipment
Networking equipment such as routers and switches require high-speed memory for packet buffering and forwarding tables. The RS512M16Z2DD-62DT's 3200 Mb/s/pin data rate and 8Gbit capacity provide ample bandwidth and storage. Its CRC and write leveling features ensure data integrity in high-speed data paths. The FBGA-96 package allows for compact board designs. It can be paired with network processors or FPGAs like the XC7A100T for data plane processing.
Empfohlen
Server and Storage
In server and storage applications, the RS512M16Z2DD-62DT provides high-density, high-speed memory for caching and buffering. Its 8Gbit capacity and DDR4-3200 speed enable fast data access and improved system performance. The device's low power consumption helps reduce overall system power. It is suitable for use in entry-level servers, network attached storage (NAS), and storage arrays. It can be used with server-class processors or high-performance MCUs like the STM32H743BGT6.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für RS512M16Z2DD-62DT – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MT40A512M16TB-062E | K4A8G165WC-BCRC | H5AN8G6NCJR-VKC |
|---|---|---|---|---|
| Package | FBGA-96 (7.5x13) | FBGA-96 (7.5x13) | FBGA-96 (7.5x13) | FBGA-96 (7.5x13) |
| Brand | Rayson | Micron | Samsung | SK Hynix |
| Memory Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mb/s/pin | 3200 Mb/s/pin | 3200 Mb/s/pin | 3200 Mb/s/pin |
| CAS Latency | 22 | 22 | 22 | 22 |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| Supply Voltage (VDD) | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V | 1.14V to 1.26V |
Wichtigste Unterscheidungsmerkmale
- Higher data rate than some alternatives (vs. MT40A512M16JY-075E)
- Wide temperature range (vs. K4A8G165WB-BCWE)
- Cost-effective alternative to major brands (vs. MT40A512M16TB-062E)
Designhinweise
For DDR4 routing, maintain controlled impedance of 40-50 ohms for single-ended signals and 80-100 ohms differential for DQS and clock pairs. Keep trace lengths matched within +/- 0.5mm for data and address/command groups. Use ground planes beneath the memory area to minimize noise and ensure signal integrity.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed as close as possible to each power pin. Use a 10uF bulk capacitor near the memory power input. Ensure the power supply can handle transient currents during refresh and active operations. Follow the datasheet's power-up sequence requirements.
The RS512M16Z2DD-62DT operates up to +95°C, but ensure adequate airflow or heatsinking in high-temperature environments. The FBGA-96 package has a thermal resistance that benefits from a solid ground plane and thermal vias. Monitor junction temperature to avoid exceeding the maximum rating.
Compliance-Informationen
RoHS compliant per LCSC and JLCPCB listings. No AEC-Q100 qualification for this memory component.
