K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
Teilenummer: K4A8G165WB-BCWE ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $8.35 | $8,35 |
| 10 | $7.85 | $78,50 |
| 100 | $7.35 | $735,00 |
| 500 | $6.95 | $3.475,00 |
| 1.000 | $6.55 | $6.550,00 |
K4A8G165WB-BCWE Übersicht
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a volatile memory technology that transfers data on both edges of the clock signal, doubling bandwidth versus DDR3 at the same clock. As a member of the voltage regulator of system cost and power - DRAM -> synchronous DRAM -> DDR SDRAM -> DDR4 hierarchy - it operates at 1.2 V instead of the 1.5 V of DDR3, cutting power consumption by roughly 25% while raising density and bandwidth. DDR4 is the industry-standard main memory for servers, workstations, desktops, networking, and embedded computing platforms.
Key features of the K4A8G165WB-BCWE include the 3200 Mbps speed bin (PC4-25600 class), a 16-bit data interface suited to space-constrained boards that cannot use 64/72-bit DIMM channels, bank group architecture for improved effective bandwidth, and on-die termination with ZQ calibration for signal integrity. The commercial temperature range of 0 to +85 C covers consumer, computing, and most industrial environments.
Architecturally, this device belongs to Samsung's DDR4 B-die family, widely recognized for tight timing and strong overclocking headroom. It uses a burst length of 8, supports auto precharge, asynchronous reset, CRC and data mask functions, and dynamic on-chip termination, all of which reduce controller overhead and improve bus efficiency at high data rates.
Typical applications include desktop and embedded x86/ARM main memory, networking line cards, industrial gateways, set-top boxes, and gaming or workstation graphics-adjacent memory buffers, where an 8 Gb x16 device allows 4 GB to 8 GB of memory in only two to four packages.
Design consideration: route the 3200 Mbps data lines with controlled impedance and length matching, and place decoupling capacitors directly at the 1.2 V VDD balls; the datasheet layout guidelines should be followed to avoid eye-diagram closure.
This page synthesizes distributor pricing, verified drop-in alternatives across Samsung, Micron, and Nanya, and practical design notes not found in the manufacturer datasheet alone.
Drop-in-Alternativen für K4A8G165WB-BCWE – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit K4A8G165WB-BCWE (gleiche Bauform und Footprint) – abweichend in Package, Data Rate, Interface, Operating Temperature, Memory Size.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
K4A8G165WC-BCWE
✓ Auf Lager
$38 / Stück
Datenblatt ansehen →K4A8G165WB-BCTD
✓ Auf Lager
$37 / Stück
Datenblatt ansehen →K4A8G165WB-BCRC
✓ Auf Lager
$12.57 / Stück
Datenblatt ansehen →K4A8G165WB-BIRC
✓ Auf Lager
$39.5 / Stück
Datenblatt ansehen →K4A8G165WB-BCPB
✓ Auf Lager
$2.3 / Stück
Datenblatt ansehen →MT40A512M16LY-062E AAT:E
✓ Auf Lager
$9.2 / Stück
Datenblatt ansehen →NT5AD512M16A4-GZ
✓ Auf Lager
$8.5 / Stück
Datenblatt ansehen →K4A8G165WB-BCWE Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR4 SDRAM |
| Density | 8 Gb |
| Speicherorganisation | 512M x 16 |
| Datenrate | 3200 Mbps |
| Versorgungsspannung | 1.2 V |
| Access Time (CAS Latency) | 19 ns |
| Schnittstelle | Parallel |
| Gehäuse | 96FBGA |
| Montageart | Surface Mount |
| Betriebstemperatur | 0C to +85C |
| Burst Length | 8 |
| Bank Group Architecture | Yes |
| On-Die Termination (ODT) | Yes, dynamic ODT with ZQ calibration |
| Functions | Auto precharge, asynchronous reset, CRC, data mask |
| RoHS-Status | Compliant |
| Lead Free | Yes |
K4A8G165WB-BCWE 96fbga Pinbelegungsleitfaden
Pinbelegung für K4A8G165WB-BCWE (96fbga-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für K4A8G165WB-BCWE.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
K4A8G165WB-BCWE ist geeignet für 6 Anwendungs: Desktop and Workstation Main Memory, Networking Equipment and Line Cards, Embedded ARM and Industrial Computing, Gaming and Enthusiast PC Memory Modules, Set-Top Boxes and Smart Home Hubs, Edge AI and Data Acquisition Systems.
Desktop and Workstation Main Memory
The K4A8G165WB-BCWE serves as main system memory in desktop PCs, mini-PCs, and workstations where x16 organization is used on SO-DIMM style or soldered-down memory designs. Its 3200 Mbps data rate matches DDR4-3200 (PC4-25600) JEDEC-class memory controllers in modern Intel and AMD platforms, and the 8 Gb density allows 8 GB of RAM in only four packages on space-constrained boards. The Samsung B-die silicon provides margin above the rated timings for stability under memory-controller stress, and dynamic ODT with ZQ calibration maintains signal integrity across the high-speed bus. Designers should follow the datasheet fly-by routing and length-matching guidance at 3200 Mbps to keep eye margins at the controller.
Empfohlen
Networking Equipment and Line Cards
Enterprise switches, routers, and industrial gateways use DDR4 x16 components like the K4A8G165WB-BCWE for packet buffering, route tables, and control-plane memory. The 16-bit interface lets designers build 32-bit or 64-bit buses with two or four packages, and the 3200 Mbps rate supplies the bandwidth required for gigabit-class and multi-gigabit forwarding paths. Bank group architecture improves effective throughput on random access patterns typical of packet processing, while CRC and asynchronous reset functions improve link robustness in always-on equipment. The 1.2 V operation reduces total board power versus DDR3 solutions, an important factor in fanless and PoE-budget-constrained network hardware.
Empfohlen
Embedded ARM and Industrial Computing
Embedded ARM SoCs (NXP i.MX, TI Sitara, Rockchip, Allwinner families) with DDR4 controllers commonly pair with x16 DRAM such as the K4A8G165WB-BCWE in soldered-down designs. The 8 Gb density supports Linux, real-time analytics, and edge-AI inference workloads without external storage paging, and the 96FBGA footprint fits dense carrier boards. The 0C to +85C commercial-industrial range covers most factory-floor enclosures; for unheated outdoor installations, designers should select the BCRC or industrial BI suffix variants rated to 95C or beyond. Layout attention to the 3200 Mbps signal integrity requirements - length matching, reference planes, and VTT termination - is essential for production reliability.
Empfohlen
Gaming and Enthusiast PC Memory Modules
The K4A8G165WB-BCWE is a Samsung B-die component, a silicon revision celebrated in the PC enthusiast community for exceptional overclocking and tight subtimings. UDIMM and SODIMM module builders use B-die x16 parts for high-performance gaming memory where latencies below JEDEC defaults are achievable at 3200 Mbps and beyond. The 512M x 16 organization is specifically used in SODIMMs and small-outline modules for compact gaming laptops and mini-ITX systems. Strictly within specification, the part delivers DDR4-3200 with 19 ns access timing; headroom beyond that is an engineering margin bonus rather than a guarantee, so module qualification should still validate every timing register across voltage and temperature corners.
Empfohlen
Set-Top Boxes and Smart Home Hubs
Consumer set-top boxes, Android TV platforms, and smart home hub gateways use soldered-down DDR4 x16 memory such as the K4A8G165WB-BCWE alongside SoCs from Amlogic, Rockchip, and Allwinner. The 8 Gb density supports 1 GB to 2 GB RAM configurations (one or two packages), adequate for 4K video decoding buffers and smart-home middleware. Its 1.2 V rail simplifies power-tree design in cost-sensitive consumer products, and the 96FBGA package supports compact two- or four-layer stack-ups common in this segment. The 0C to +85C range covers typical living-room and cabinet environments, and burst-length-8 operation aligns with the burst-oriented memory controllers in these media SoCs.
Empfohlen
Edge AI and Data Acquisition Systems
Edge-AI inference modules, machine-vision cameras, and high-speed data acquisition systems require fast frame buffers and model storage, which the K4A8G165WB-BCWE provides at low power. The 3200 Mbps rate delivers the bandwidth needed to stream multiple sensor interfaces into DRAM while an NPU or GPU consumes activation data, and the 8 Gb density holds neural-network weights for vision models without falling back to flash. Its x16 organization suits the 16/32-bit DDR4 controllers on edge compute modules. For passively cooled edge enclosures, thermal analysis should confirm junction temperatures remain within the 0C to +85C window or that the BCRC (95C) variant is selected, ensuring long-term data retention margins and refresh reliability.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für K4A8G165WB-BCWE – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | K4A8G165WC-BCWE | K4A8G165WB-BCRC | MT40A512M16LY-062E AAT | NT5AD512M16A4-GZ |
|---|---|---|---|---|---|
| Package | 96FBGA | 96FBGA - same | 96FBGA (PBGA96) - same | E: 96FBGA - same | 96FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | E: Micron Technology | Nanya Technology |
| Density | 8 Gb | 8 Gb | 8 Gb | E: 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | E: 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | E: 1.2 V | 1.2 V |
Wichtigste Unterscheidungsmerkmale
- Samsung B-die silicon with strong timing margin (vs. NT5AD512M16A4-GZ)
- Native 16-bit organization for compact boards (vs. H5AN8G6NDJR)
- Cost trade-off vs same-family 95C variant (vs. K4A8G165WC-BCWE)
Designhinweise
At 3200 Mbps, DDR4 signal integrity dominates design success. Route all DQ/DQS/DM nets as tightly length-matched groups (intra-byte-lane matching typically within a few mils) over continuous reference planes, and use fly-by routing for address/command/clock with on-die termination configured via mode registers. Simulate the eye diagram at the controller with IBIS models from Samsung before tape-out, and verify VTT (0.6 V) termination regulation under simultaneous switching of all 16 DQ balls.
Provide three rails: VDD/VDDQ at 1.2 V, VPP at 2.5 V, and VTT at 0.6 V (VDDQ/2). Estimate: with 16 DQ lines terminating to VTT, transient currents can reach amperes during burst writes, so place bulk and high-frequency decoupling (10 uF bulk plus multiple 0.1 uF/0.01 uF ceramics) directly at the 96FBGA power ball array. A dedicated LDO or VTT termination regulator (sourcing and sinking) is required - do not derive VTT from a resistive divider.
Do not mix speed-bin suffixes (WB-BCWE vs WB-BCRC vs WC-BCWE) on the same memory bus without verifying AC timing and temperature ranges in your memory controller initialization code - RC and WC suffixes extend to 95C and carry different feature sets (CRC, data mask). Also confirm the controller's ZQ calibration interval settings match the datasheet; skipping or misconfiguring ZQ calibration is a frequent cause of intermittent failures at DDR4-3200.
Compliance-Informationen
RoHS compliant and lead-free per internal database description. REACH and conflict-minerals status not stated in provided data.
