1ED3122MC12HXUMA1 vs 1EDI60H12AHXUMA1 Comparación
Comparación detallada lado a lado de 1ED3122MC12HXUMA1 por Infineon y 1EDI60H12AHXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
1EDI60H12AHXUMA1 - 1200V Isolated Gate Driver, 10A Source | Infineon
1EDI60H12AHXUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | 1ED3122MC12HXUMA1 | 1EDI60H12AHXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,92 | $2,18 |
| Product Type | Isolated Gate Driver (single-channel) | Single-channel high-side gate driver IC |
| Isolation Technology | Coreless Transformer (CT) | Galvanic isolation via coreless transformer |
| Isolation Voltage (Vrms) | 5.7 kVrms | — |
| Maximum Transient Isolation (Vpk) | 8 kVpk | — |
| Output Current (source / sink) | 10 A / 9 A | — |
| Configuration | High-side, non-inverting | — |
| Number of Channels | 1 | 1 |
| Supply Voltage (VCC / VBS) | 8 V to 35 V | — |
| Propagation Delay (typ.) | 30 ns | — |
| Rise Time / Fall Time (typ.) | 15 ns / 30 ns | — |
| Miller Clamp | Active (integrated) | — |
| Short-Circuit Clamping | Yes | — |
| UVLO | Primary and secondary side | — |
| Temperatura de funcionamiento | -40 C to +125 C | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| Encapsulado | PG-DSO-8-66 (300-mil DSO-8) | PG-DSO-8-59 (DSO-8 with 8 mm creepage) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 2 | 2 (1 year floor life) |
| Estado RoHS | Compliant | Compliant |
| Isolation Voltage Rating | — | 1200 V |
| Peak Source Current (typ.) | — | 10.0 A |
| Peak Sink Current (typ.) | — | 9.4 A |
| Configuración de salida | — | Separate source and sink (SEP) outputs |
| Input Compatibility | — | CMOS / TTL logic |
| Driven Device | — | IGBT (and MOSFET / SiC compatible) |
| Creepage Distance | — | 8 mm |
| Short-Circuit Protection | — | Short-circuit clamping |