1ED3122MC12HXUMA1 vs 1EDI60H12AHXUMA1 Comparison

Detailed side-by-side comparison of 1ED3122MC12HXUMA1 by Infineon and 1EDI60H12AHXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 1ED3122MC12HXUMA1 1EDI60H12AHXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Product Type Isolated Gate Driver (single-channel) Single-channel high-side gate driver IC
Isolation Technology Coreless Transformer (CT) Galvanic isolation via coreless transformer
Isolation Voltage (Vrms) 5.7 kVrms —
Maximum Transient Isolation (Vpk) 8 kVpk —
Output Current (source / sink) 10 A / 9 A —
Configuration High-side, non-inverting —
Number of Channels 1 1
Supply Voltage (VCC / VBS) 8 V to 35 V —
Propagation Delay (typ.) 30 ns —
Rise Time / Fall Time (typ.) 15 ns / 30 ns —
Miller Clamp Active (integrated) —
Short-Circuit Clamping Yes —
UVLO Primary and secondary side —
Operating Temperature -40 C to +125 C -40C to +125C [DATA_NEEDED: confirm exact range from datasheet]
Package PG-DSO-8-66 (300-mil DSO-8) PG-DSO-8-59 (DSO-8 with 8 mm creepage)
Mounting Type Surface Mount Surface Mount
MSL Level 2 2 (1 year floor life)
RoHS Status Compliant Compliant
Isolation Voltage Rating — 1200 V
Peak Source Current (typ.) — 10.0 A
Peak Sink Current (typ.) — 9.4 A
Output Configuration — Separate source and sink (SEP) outputs
Input Compatibility — CMOS / TTL logic
Driven Device — IGBT (and MOSFET / SiC compatible)
Creepage Distance — 8 mm
Short-Circuit Protection — Short-circuit clamping

Datasheets & Resources

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