1ED3122MC12HXUMA1 vs 1EDI60H12AHXUMA1 对比

详细并排对比 1ED3122MC12HXUMA1 出自 Infineon 和 1EDI60H12AHXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1ED3122MC12HXUMA1 1ED3122MC12HXUMA1 - 10A Isolated Gate Driver, 5.7kV | Infineon

1ED3122MC12HXUMA1 - 10A Isolated Gate Driver, 5.7kV | Infineon

1ED3122MC12HXUMA1 ✓ 量产中

规格对比

参数 1ED3122MC12HXUMA1 1EDI60H12AHXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.92 $2.18
Product Type Isolated Gate Driver (single-channel) Single-channel high-side gate driver IC
Isolation Technology Coreless Transformer (CT) Galvanic isolation via coreless transformer
Isolation Voltage (Vrms) 5.7 kVrms —
Maximum Transient Isolation (Vpk) 8 kVpk —
Output Current (source / sink) 10 A / 9 A —
Configuration High-side, non-inverting —
Number of Channels 1 1
Supply Voltage (VCC / VBS) 8 V to 35 V —
Propagation Delay (typ.) 30 ns —
Rise Time / Fall Time (typ.) 15 ns / 30 ns —
Miller Clamp Active (integrated) —
Short-Circuit Clamping Yes —
UVLO Primary and secondary side —
工作温度 -40 C to +125 C -40C to +125C [DATA_NEEDED: confirm exact range from datasheet]
封装 PG-DSO-8-66 (300-mil DSO-8) PG-DSO-8-59 (DSO-8 with 8 mm creepage)
安装类型 Surface Mount Surface Mount
MSL 等级 2 2 (1 year floor life)
RoHS 状态 Compliant Compliant
Isolation Voltage Rating — 1200 V
Peak Source Current (typ.) — 10.0 A
Peak Sink Current (typ.) — 9.4 A
输出配置 — Separate source and sink (SEP) outputs
Input Compatibility — CMOS / TTL logic
Driven Device — IGBT (and MOSFET / SiC compatible)
Creepage Distance — 8 mm
Short-Circuit Protection — Short-circuit clamping

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