1EDI20I12MFXUMA1 vs 2ED21064S06JXUMA1 Comparación

Comparación detallada lado a lado de 1EDI20I12MFXUMA1 por Infineon y 2ED21064S06JXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Infineon
1EDI20I12MFXUMA1 1EDI20I12MFXUMA1 - 1200V Isolated Gate Driver | Infineon

1EDI20I12MFXUMA1 - 1200V Isolated Gate Driver | Infineon

1EDI20I12MFXUMA1 ✓ Activo

Comparación de especificaciones

Parámetro 1EDI20I12MFXUMA1 2ED21064S06JXUMA1
Marca Infineon Infineon
Categoría Power MOSFET Drivers Power MOSFET Drivers
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $1,84 $0,85
Función Isolated single-channel high-side gate driver High-Side and Low-Side Gate Driver
Isolation Type Galvanic (coreless transformer) —
Number of Channels 1 —
Output Current (Source/Sink) 2 A peak —
Active Miller Clamp Current 2 A —
Maximum Operating Voltage (Switch side) 1200 V —
Propagation Delay (typ.) 300 ns —
Input Logic Inverting / Non-inverting —
Configuración de salida Single high-side driver —
Minimum Creepage 4 mm —
Short Circuit Protection Yes (clamping) —
Encapsulado PG-DSO-8-51 (8-pin DSO, 4 mm creepage) PG-DSO-14 (14-pin SOIC)
Tipo de montaje Surface Mount Surface Mount
Temperatura de funcionamiento [DATA_NEEDED: operating temperature range] -40C to +125C
Supply Voltage (Secondary) [DATA_NEEDED: secondary supply voltage range] —
CMTI [DATA_NEEDED: common-mode transient immunity] —
UVLO Yes (secondary side) —
Estado RoHS Compliant ROHS3 Compliant
Configuration — Half-Bridge (2 outputs, non-inverting)
Topología — High-Side, Low-Side with integrated bootstrap diode
Maximum Offset / Boot Voltage — 650 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.7 A
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
Propagation Delay (typical) — 100 ns
Channel-to-Channel Delay Match — [DATA_NEEDED: channel-to-channel delay match]
Under-Voltage Lockout — Yes (both channels)
Bootstrap Diode — Integrated
Input Logic Compatibility — 3.3 V / 5 V CMOS
Nivel MSL — [DATA_NEEDED: MSL level]
Negative Gate Drive Robustness — -0.7 V

Hojas de datos y recursos

Examinar todos los productos Crear BOM Solicitar cotización