1EDI20I12MFXUMA1 vs 2ED21064S06JXUMA1 Vergleich

Detaillierter Direktvergleich von 1EDI20I12MFXUMA1 von Infineon und 2ED21064S06JXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
1EDI20I12MFXUMA1 1EDI20I12MFXUMA1 - 1200V Isolated Gate Driver | Infineon

1EDI20I12MFXUMA1 - 1200V Isolated Gate Driver | Infineon

1EDI20I12MFXUMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter 1EDI20I12MFXUMA1 2ED21064S06JXUMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,84 $0,85
Funktion Isolated single-channel high-side gate driver High-Side and Low-Side Gate Driver
Isolation Type Galvanic (coreless transformer) —
Number of Channels 1 —
Output Current (Source/Sink) 2 A peak —
Active Miller Clamp Current 2 A —
Maximum Operating Voltage (Switch side) 1200 V —
Propagation Delay (typ.) 300 ns —
Input Logic Inverting / Non-inverting —
Ausgangskonfiguration Single high-side driver —
Minimum Creepage 4 mm —
Short Circuit Protection Yes (clamping) —
Gehäuse PG-DSO-8-51 (8-pin DSO, 4 mm creepage) PG-DSO-14 (14-pin SOIC)
Montageart Surface Mount Surface Mount
Betriebstemperatur [DATA_NEEDED: operating temperature range] -40C to +125C
Supply Voltage (Secondary) [DATA_NEEDED: secondary supply voltage range] —
CMTI [DATA_NEEDED: common-mode transient immunity] —
UVLO Yes (secondary side) —
RoHS-Status Compliant ROHS3 Compliant
Configuration — Half-Bridge (2 outputs, non-inverting)
Topologie — High-Side, Low-Side with integrated bootstrap diode
Maximum Offset / Boot Voltage — 650 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.7 A
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
Propagation Delay (typical) — 100 ns
Channel-to-Channel Delay Match — [DATA_NEEDED: channel-to-channel delay match]
Under-Voltage Lockout — Yes (both channels)
Bootstrap Diode — Integrated
Input Logic Compatibility — 3.3 V / 5 V CMOS
MSL-Level — [DATA_NEEDED: MSL level]
Negative Gate Drive Robustness — -0.7 V

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