1EDI20I12MFXUMA1 vs 2ED21064S06JXUMA1 Comparação

Comparação detalhada lado a lado de 1EDI20I12MFXUMA1 por Infineon e 2ED21064S06JXUMA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Infineon
1EDI20I12MFXUMA1 1EDI20I12MFXUMA1 - 1200V Isolated Gate Driver | Infineon

1EDI20I12MFXUMA1 - 1200V Isolated Gate Driver | Infineon

1EDI20I12MFXUMA1 ✓ Ativo

Comparação de especificações

Parâmetro 1EDI20I12MFXUMA1 2ED21064S06JXUMA1
Marca Infineon Infineon
Categoria Power MOSFET Drivers Power MOSFET Drivers
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $1,84 $0,85
Função Isolated single-channel high-side gate driver High-Side and Low-Side Gate Driver
Isolation Type Galvanic (coreless transformer) —
Number of Channels 1 —
Output Current (Source/Sink) 2 A peak —
Active Miller Clamp Current 2 A —
Maximum Operating Voltage (Switch side) 1200 V —
Propagation Delay (typ.) 300 ns —
Input Logic Inverting / Non-inverting —
Configuração de saída Single high-side driver —
Minimum Creepage 4 mm —
Short Circuit Protection Yes (clamping) —
Encapsulamento PG-DSO-8-51 (8-pin DSO, 4 mm creepage) PG-DSO-14 (14-pin SOIC)
Tipo de montagem Surface Mount Surface Mount
Temperatura de operação [DATA_NEEDED: operating temperature range] -40C to +125C
Supply Voltage (Secondary) [DATA_NEEDED: secondary supply voltage range] —
CMTI [DATA_NEEDED: common-mode transient immunity] —
UVLO Yes (secondary side) —
Status RoHS Compliant ROHS3 Compliant
Configuration — Half-Bridge (2 outputs, non-inverting)
Topologia — High-Side, Low-Side with integrated bootstrap diode
Maximum Offset / Boot Voltage — 650 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.7 A
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
Propagation Delay (typical) — 100 ns
Channel-to-Channel Delay Match — [DATA_NEEDED: channel-to-channel delay match]
Under-Voltage Lockout — Yes (both channels)
Bootstrap Diode — Integrated
Input Logic Compatibility — 3.3 V / 5 V CMOS
Nível MSL — [DATA_NEEDED: MSL level]
Negative Gate Drive Robustness — -0.7 V

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