1EDI20I12MFXUMA1 vs 2ED21064S06JXUMA1 对比
详细并排对比 1EDI20I12MFXUMA1 出自 Infineon 和 2ED21064S06JXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 1EDI20I12MFXUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.84 | $0.85 |
| 功能 | Isolated single-channel high-side gate driver | High-Side and Low-Side Gate Driver |
| Isolation Type | Galvanic (coreless transformer) | — |
| Number of Channels | 1 | — |
| Output Current (Source/Sink) | 2 A peak | — |
| Active Miller Clamp Current | 2 A | — |
| Maximum Operating Voltage (Switch side) | 1200 V | — |
| Propagation Delay (typ.) | 300 ns | — |
| Input Logic | Inverting / Non-inverting | — |
| 输出配置 | Single high-side driver | — |
| Minimum Creepage | 4 mm | — |
| Short Circuit Protection | Yes (clamping) | — |
| 封装 | PG-DSO-8-51 (8-pin DSO, 4 mm creepage) | PG-DSO-14 (14-pin SOIC) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Supply Voltage (Secondary) | [DATA_NEEDED: secondary supply voltage range] | — |
| CMTI | [DATA_NEEDED: common-mode transient immunity] | — |
| UVLO | Yes (secondary side) | — |
| RoHS 状态 | Compliant | ROHS3 Compliant |
| Configuration | — | Half-Bridge (2 outputs, non-inverting) |
| 拓扑 | — | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.29 A |
| Sink Current (typical) | — | 0.7 A |
| Rise Time (typical) | — | [DATA_NEEDED: rise time] |
| Fall Time (typical) | — | [DATA_NEEDED: fall time] |
| Propagation Delay (typical) | — | 100 ns |
| Channel-to-Channel Delay Match | — | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | — | Yes (both channels) |
| Bootstrap Diode | — | Integrated |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS |
| MSL 等级 | — | [DATA_NEEDED: MSL level] |
| Negative Gate Drive Robustness | — | -0.7 V |