1EDI20I12MFXUMA1 vs 2ED21064S06JXUMA1 비교

다음의 상세 나란히 비교: 1EDI20I12MFXUMA1 제조: Infineon 및 2ED21064S06JXUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
1EDI20I12MFXUMA1 1EDI20I12MFXUMA1 - 1200V Isolated Gate Driver | Infineon

1EDI20I12MFXUMA1 - 1200V Isolated Gate Driver | Infineon

1EDI20I12MFXUMA1 ✓ 활성

사양 비교

파라미터 1EDI20I12MFXUMA1 2ED21064S06JXUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.84 $0.85
기능 Isolated single-channel high-side gate driver High-Side and Low-Side Gate Driver
Isolation Type Galvanic (coreless transformer) —
Number of Channels 1 —
Output Current (Source/Sink) 2 A peak —
Active Miller Clamp Current 2 A —
Maximum Operating Voltage (Switch side) 1200 V —
Propagation Delay (typ.) 300 ns —
Input Logic Inverting / Non-inverting —
출력 구성 Single high-side driver —
Minimum Creepage 4 mm —
Short Circuit Protection Yes (clamping) —
패키지 PG-DSO-8-51 (8-pin DSO, 4 mm creepage) PG-DSO-14 (14-pin SOIC)
실장 유형 Surface Mount Surface Mount
동작 온도 [DATA_NEEDED: operating temperature range] -40C to +125C
Supply Voltage (Secondary) [DATA_NEEDED: secondary supply voltage range] —
CMTI [DATA_NEEDED: common-mode transient immunity] —
UVLO Yes (secondary side) —
RoHS 상태 Compliant ROHS3 Compliant
Configuration — Half-Bridge (2 outputs, non-inverting)
토폴로지 — High-Side, Low-Side with integrated bootstrap diode
Maximum Offset / Boot Voltage — 650 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.7 A
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
Propagation Delay (typical) — 100 ns
Channel-to-Channel Delay Match — [DATA_NEEDED: channel-to-channel delay match]
Under-Voltage Lockout — Yes (both channels)
Bootstrap Diode — Integrated
Input Logic Compatibility — 3.3 V / 5 V CMOS
MSL 레벨 — [DATA_NEEDED: MSL level]
Negative Gate Drive Robustness — -0.7 V

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