1EDN7116GXTMA1 vs 1ED3127MU12FXUMA1 Comparación
Comparación detallada lado a lado de 1EDN7116GXTMA1 por Infineon y 1ED3127MU12FXUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 1EDN7116GXTMA1 | 1ED3127MU12FXUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,84 | $0,74 |
| Función | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs | Single-channel isolated gate driver |
| Driver Configuration | Non-inverting, single low-side | — |
| Number of Drivers | 1 | — |
| Peak Source Current | 2 A (typ) | — |
| Peak Sink Current | 4 A (typ) | — |
| Input Type | Truly Differential Input (TDI) | — |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | — |
| Switch-Node Blocking Voltage | 200 V (max) | — |
| Propagation Delay (Typ) | 9 ns | — |
| Rise Time (Typ) | 3 ns | — |
| Fall Time (Typ) | 3 ns | — |
| Quiescent Current (Typ) | 0.6 mA | — |
| Miller Clamp | Integrated, active | — |
| UVLO | Yes (VCC and gate-rail monitored) | — |
| Rango de temperatura de funcionamiento | -40 °C to +125 °C | -40C to +125C |
| Encapsulado | PG-VSON-10-4 (3.0 mm × 3.0 mm) | PG-DSO-8-72 (SOIC-8 wide-body) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL3 | — |
| Estado RoHS | Compliant | Compliant |
| Target Switch Technology | GaN HEMT (CoolGaN) or Si MOSFET | — |
| Número de salidas | — | 1 |
| Configuración de salida | — | High-side / Low-side, Inverting / Non-Inverting |
| Peak Output Current | — | 10 A (source/sink) |
| Continuous Output Current | — | 9 A |
| Supply Voltage (VCC2 secondary) | — | 12 V to 35 V |
| Supply Voltage (VCC1 primary) | — | 3 V to 5.5 V |
| Propagation Delay (typ.) | — | 15 ns |
| Delay Matching (typ.) | — | 30 ns |
| Galvanic Isolation | — | 3000 Vrms (coreless transformer) |
| Protection Features | — | Miller clamp, UVLO, DESAT short-circuit protection |
| Drives | — | IGBT, MOSFET, SiC MOSFET |