1EDN7116GXTMA1 vs 1ED3127MU12FXUMA1 对比
详细并排对比 1EDN7116GXTMA1 出自 Infineon 和 1ED3127MU12FXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 1EDN7116GXTMA1 | 1ED3127MU12FXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.84 | $0.74 |
| 功能 | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs | Single-channel isolated gate driver |
| Driver Configuration | Non-inverting, single low-side | — |
| Number of Drivers | 1 | — |
| Peak Source Current | 2 A (typ) | — |
| Peak Sink Current | 4 A (typ) | — |
| Input Type | Truly Differential Input (TDI) | — |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | — |
| Switch-Node Blocking Voltage | 200 V (max) | — |
| Propagation Delay (Typ) | 9 ns | — |
| Rise Time (Typ) | 3 ns | — |
| Fall Time (Typ) | 3 ns | — |
| Quiescent Current (Typ) | 0.6 mA | — |
| Miller Clamp | Integrated, active | — |
| UVLO | Yes (VCC and gate-rail monitored) | — |
| 工作温度范围 | -40 °C to +125 °C | -40C to +125C |
| 封装 | PG-VSON-10-4 (3.0 mm × 3.0 mm) | PG-DSO-8-72 (SOIC-8 wide-body) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | MSL3 | — |
| RoHS 状态 | Compliant | Compliant |
| Target Switch Technology | GaN HEMT (CoolGaN) or Si MOSFET | — |
| 输出数量 | — | 1 |
| 输出配置 | — | High-side / Low-side, Inverting / Non-Inverting |
| Peak Output Current | — | 10 A (source/sink) |
| Continuous Output Current | — | 9 A |
| Supply Voltage (VCC2 secondary) | — | 12 V to 35 V |
| Supply Voltage (VCC1 primary) | — | 3 V to 5.5 V |
| Propagation Delay (typ.) | — | 15 ns |
| Delay Matching (typ.) | — | 30 ns |
| Galvanic Isolation | — | 3000 Vrms (coreless transformer) |
| Protection Features | — | Miller clamp, UVLO, DESAT short-circuit protection |
| Drives | — | IGBT, MOSFET, SiC MOSFET |