1EDN7116GXTMA1 vs 1ED3127MU12FXUMA1 Comparison
Detailed side-by-side comparison of 1EDN7116GXTMA1 by Infineon and 1ED3127MU12FXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1EDN7116GXTMA1
1EDN7116GXTMA1 - 200V Single-Channel GaN Gate Driver IC | Infineon
1EDN7116GXTMA1 β Active
Specification Comparison
| Parameter | 1EDN7116GXTMA1 | 1ED3127MU12FXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.84 | $0.74 |
| Function | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs | Single-channel isolated gate driver |
| Driver Configuration | Non-inverting, single low-side | β |
| Number of Drivers | 1 | β |
| Peak Source Current | 2 A (typ) | β |
| Peak Sink Current | 4 A (typ) | β |
| Input Type | Truly Differential Input (TDI) | β |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | β |
| Switch-Node Blocking Voltage | 200 V (max) | β |
| Propagation Delay (Typ) | 9 ns | β |
| Rise Time (Typ) | 3 ns | β |
| Fall Time (Typ) | 3 ns | β |
| Quiescent Current (Typ) | 0.6 mA | β |
| Miller Clamp | Integrated, active | β |
| UVLO | Yes (VCC and gate-rail monitored) | β |
| Operating Temperature Range | -40 Β°C to +125 Β°C | -40C to +125C |
| Package | PG-VSON-10-4 (3.0 mm Γ 3.0 mm) | PG-DSO-8-72 (SOIC-8 wide-body) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL3 | β |
| RoHS Status | Compliant | Compliant |
| Target Switch Technology | GaN HEMT (CoolGaN) or Si MOSFET | β |
| Number of Outputs | β | 1 |
| Output Configuration | β | High-side / Low-side, Inverting / Non-Inverting |
| Peak Output Current | β | 10 A (source/sink) |
| Continuous Output Current | β | 9 A |
| Supply Voltage (VCC2 secondary) | β | 12 V to 35 V |
| Supply Voltage (VCC1 primary) | β | 3 V to 5.5 V |
| Propagation Delay (typ.) | β | 15 ns |
| Delay Matching (typ.) | β | 30 ns |
| Galvanic Isolation | β | 3000 Vrms (coreless transformer) |
| Protection Features | β | Miller clamp, UVLO, DESAT short-circuit protection |
| Drives | β | IGBT, MOSFET, SiC MOSFET |