BAT41-TAP vs BAT43 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BAT41-TAP sa pamamagitan ng Vishay Intertechnology at BAT43 sa pamamagitan ng STMicroelectronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Vishay Intertechnology
BAT41-TAP - 100V 100mA Small Signal Schottky Diode | Vishay
BAT41-TAP ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BAT41-TAP | BAT43 |
|---|---|---|
| Brand | Vishay Intertechnology | STMicroelectronics |
| Kategorya | Diodes | Diodes |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Diode Type | Small Signal Schottky Barrier | — |
| Reverse Voltage (VR) | 100 V | — |
| Average Forward Current | 100 mA | — |
| Non-Repetitive Peak Forward Current (IFSM) | 750 mA | — |
| Packhaging | DO-204AH (DO-35) axial through-hole | DO-35 (glass axial, through-hole) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Turn-On Voltage | Low (Schottky barrier) | — |
| Switching Speed | Extremely fast, low forward and reverse recovery times | — |
| ESD Protection | PN junction guard ring | Integrated guard ring against excessive voltage |
| Intended Use | General purpose, switching mode with low IR losses | — |
| Automotive Qualification | AEC-Q101 qualified version available (part number on request) | — |
| Configuration | Single diode | Single diode |
| Forward Voltage (VF) | [DATA_NEEDED: Forward Voltage (VF)] | — |
| Reverse Leakage Current (IR) | [DATA_NEEDED: Reverse Leakage Current (IR)] | — |
| Junction Capacitance (CJ) | [DATA_NEEDED: Junction Capacitance (CJ)] | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: Operating Temperature Range] | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Device Type | — | Small Signal Schottky Diode |
| Repetitive Peak Reverse Voltage (VRRM) | — | 30 V |
| Forward Continuous Current (IF) | — | 200 mA at Ta = 25 C |
| Repetitive Peak Forward Current (IFRM) | — | 500 mA (tp <= 1 s, delta <= 0.5) |
| Non-Repetitive Surge Current (IFSM) | — | 4 A (tp = 10 ms) |
| Pwersang Pinahihigpit (Ptot) | — | 200 mW at Tl = 65 C |
| Technology | — | Metal-to-silicon Schottky barrier |
| Forward Voltage | — | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Leakage Current | — | [DATA_NEEDED: reverse leakage current] |
| Case Style | — | Hermetically sealed glass body |
| Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range] |