BAT41-TAP vs BAT43 तुलना

विस्तृत दोनों ओर की तुलना BAT41-TAP द्वारा Vishay Intertechnology और BAT43 द्वारा STMicroelectronics. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。

Vishay Intertechnology
BAT41-TAP BAT41-TAP - 100V 100mA Small Signal Schottky Diode | Vishay

BAT41-TAP - 100V 100mA Small Signal Schottky Diode | Vishay

BAT41-TAP ✓ सक्रिय
STMicroelectronics
BAT43 BAT43 - 30V 200mA Schottky Diode DO-35 | STMicroelectronics

BAT43 - 30V 200mA Schottky Diode DO-35 | STMicroelectronics

BAT43 ✓ सक्रिय

विशेषता तुलना

पैरामीटर BAT41-TAP BAT43
ब्रांड Vishay Intertechnology STMicroelectronics
श्रेणी Diodes Diodes
लाइफसाइकिल स्थिति सक्रिय सक्रिय
Diode Type Small Signal Schottky Barrier —
Reverse Voltage (VR) 100 V —
Average Forward Current 100 mA —
Non-Repetitive Peak Forward Current (IFSM) 750 mA —
पैकेज DO-204AH (DO-35) axial through-hole DO-35 (glass axial, through-hole)
माउंटिंग प्रकार Through Hole Through Hole
Turn-On Voltage Low (Schottky barrier) —
Switching Speed Extremely fast, low forward and reverse recovery times —
ESD Protection PN junction guard ring Integrated guard ring against excessive voltage
Intended Use General purpose, switching mode with low IR losses —
Automotive Qualification AEC-Q101 qualified version available (part number on request) —
Configuration Single diode Single diode
Forward Voltage (VF) [DATA_NEEDED: Forward Voltage (VF)] —
Reverse Leakage Current (IR) [DATA_NEEDED: Reverse Leakage Current (IR)] —
Junction Capacitance (CJ) [DATA_NEEDED: Junction Capacitance (CJ)] —
ऑपरेटिंग तापमान रेंज [DATA_NEEDED: Operating Temperature Range] —
RoHS स्थिति Compliant [DATA_NEEDED: RoHS status]
Device Type — Small Signal Schottky Diode
Repetitive Peak Reverse Voltage (VRRM) — 30 V
Forward Continuous Current (IF) — 200 mA at Ta = 25 C
Repetitive Peak Forward Current (IFRM) — 500 mA (tp <= 1 s, delta <= 0.5)
Non-Repetitive Surge Current (IFSM) — 4 A (tp = 10 ms)
पावर डिसिपेशन (Ptot) — 200 mW at Tl = 65 C
Technology — Metal-to-silicon Schottky barrier
Forward Voltage — [DATA_NEEDED: forward voltage at rated current]
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current]
Case Style — Hermetically sealed glass body
ऑपरेटिंग तापमान — [DATA_NEEDED: operating temperature range]

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