BAT42-TAP vs BAT43 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BAT42-TAP sa pamamagitan ng Vishay Intertechnology at BAT43 sa pamamagitan ng STMicroelectronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Vishay Intertechnology
BAT42-TAP BAT42-TAP - 30V 200mA Schottky Diode DO-35 | Vishay

BAT42-TAP - 30V 200mA Schottky Diode DO-35 | Vishay

BAT42-TAP ✓ Nakahanda
STMicroelectronics
BAT43 BAT43 - 30V 200mA Schottky Diode DO-35 | STMicroelectronics

BAT43 - 30V 200mA Schottky Diode DO-35 | STMicroelectronics

BAT43 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BAT42-TAP BAT43
Brand Vishay Intertechnology STMicroelectronics
Kategorya Diodes Diodes
Katayuan ng Lifecycle Aktibo Aktibo
Diode Type Small-Signal Schottky Barrier —
Repetitive Peak Reverse Voltage (VRRM) 30 V 30 V
Average Forward Current (IF(AV)) 200 mA —
Non-Repetitive Surge Current (IFSM) 4.0 A 4 A (tp = 10 ms)
Forward Voltage (VF) [DATA_NEEDED: forward voltage at rated current] —
Reverse Recovery Fast switching (Schottky, no stored charge) —
Junction Capacitance [DATA_NEEDED: diode capacitance] —
Reverse Leakage Current (IR) [DATA_NEEDED: reverse leakage at rated VR] —
Packhaging DO-204AH (DO-35) glass axial DO-35 (glass axial, through-hole)
Uri ng Pagpapasok Through Hole Through Hole
Termination Style Axial Leads —
Packaging Suffix -TAP (Ammo tape packing) —
Configuration Single Diode Single diode
Protection Feature PN junction guard ring against ESD / excessive voltage —
Temperature na Operasyon [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
AEC-Q101 Option Qualified version available on request —
Tindminan RoHS Compliant [DATA_NEEDED: RoHS status]
Mounting Technology Wave solder / hand solder —
Device Type — Small Signal Schottky Diode
Forward Continuous Current (IF) — 200 mA at Ta = 25 C
Repetitive Peak Forward Current (IFRM) — 500 mA (tp <= 1 s, delta <= 0.5)
Pwersang Pinahihigpit (Ptot) — 200 mW at Tl = 65 C
Technology — Metal-to-silicon Schottky barrier
ESD Protection — Integrated guard ring against excessive voltage
Forward Voltage — [DATA_NEEDED: forward voltage at rated current]
Reverse Leakage Current — [DATA_NEEDED: reverse leakage current]
Case Style — Hermetically sealed glass body

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