EP3SE110F780C4L vs EP3SE50F780C4L Comparación
Comparación detallada lado a lado de EP3SE110F780C4L por Intel y EP3SE50F780C4L por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP3SE110F780C4L | EP3SE50F780C4L |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | NRND |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1.550,00 | $1.320,00 |
| Series | Stratix III E | Stratix III E |
| Number of Logic Elements (LE) | 107,500 | — |
| Number of Logic Array Blocks (LAB) | [DATA_NEEDED: number of LABs] | — |
| Total Memory Bits | 8,936,448 bits | — |
| Number of 18x18 Multipliers | 488 | — |
| Number of PLLs | [DATA_NEEDED: PLL count] | — |
| User I/O Pins | 488 | — |
| Speed Grade | -4 (commercial) | C4 (commercial, speed 4) |
| Process Variant | L (low-leakage) | — |
| Temperatura de funcionamiento | 0C to +85C (commercial) | [DATA_NEEDED: full industrial/commercial grade] |
| Supply Voltage (Core) | [DATA_NEEDED: core voltage] | — |
| Package Type | 780-Ball FCBGA | — |
| Ball Pitch | 1.0 mm | — |
| Tipo de montaje | Surface Mount | — |
| Process Technology | 65 nm CMOS | — |
| Estado RoHS | Compliant | Compliant (lead-free) |
| Nivel MSL | 3 (per JEDEC J-STD-020) | — |
| Family | — | Stratix III |
| Logic Elements (LE) | — | 47,500 |
| Embedded Memory | — | 5,760,000 bits |
| User I/Os | — | 488 |
| DSP Blocks (18x18 multipliers) | — | 304 (19x16) |
| Encapsulado | — | 780-ball FCBGA (Flip-Chip BGA) |
| Process Node | — | 40 nm |
| Core Voltage | — | 1.1 V |
| Lead-Free (L suffix) | — | Yes |
| Configuration Method | — | Passive Serial / Fast Passive Parallel / JTAG / Enhanced |
| Transceivers | — | [DATA_NEEDED: per Stratix III E variant] |
| PLLs | — | [DATA_NEEDED: PLL count] |