IAUCN08S7N024TATMA1 vs IAUCN10S5L110TATMA1 Comparación
Comparación detallada lado a lado de IAUCN08S7N024TATMA1 por Infineon y IAUCN10S5L110TATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUCN08S7N024TATMA1 - 80V 2.44mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN08S7N024TATMA1 ✓ ActivoInfineon
IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon
IAUCN10S5L110TATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN08S7N024TATMA1 | IAUCN10S5L110TATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,45 | $2,08 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | OptiMOS 5 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide Semiconductor) | N-Channel MOSFET, Trench, Logic Level |
| Drain-Source Voltage (Vds) | 80 V | — |
| Continuous Drain Current (Id) at Tj | 165 A | — |
| Power Dissipation (Pd) at Tc | 157 W | — |
| Rds(on) Max at Vgs=10V | 2.44 mOhm | — |
| Encapsulado / Carcasa | PG-LHDSO-10-1 (SSO10T, 5x7 mm²) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Cooling | Top-side cooled | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 Extended Qualification |
| Estado RoHS | Compliant | Compliant |
| Gate Threshold (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ] | — |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tj | — | 61 A |
| On-Resistance RDS(on) max at VGS=10V | — | 11.3 mΩ |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: gate-source voltage rating] |
| Power Dissipation (PD) at Tc | — | 88 W |
| Temperatura de unión de funcionamiento | — | -55 °C to +175 °C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| Encapsulado | — | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled |
| Nivel MSL | — | MSL1 (260°C peak reflow) |
| Avalanche Rated | — | 100% Avalanche Tested |