IAUCN08S7N024TATMA1 vs IAUCN10S5L110TATMA1 对比
详细并排对比 IAUCN08S7N024TATMA1 出自 Infineon 和 IAUCN10S5L110TATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IAUCN08S7N024TATMA1 - 80V 2.44mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN08S7N024TATMA1 ✓ 量产中规格对比
| 参数 | IAUCN08S7N024TATMA1 | IAUCN10S5L110TATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.45 | $2.08 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | OptiMOS 5 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide Semiconductor) | N-Channel MOSFET, Trench, Logic Level |
| Drain-Source Voltage (Vds) | 80 V | — |
| Continuous Drain Current (Id) at Tj | 165 A | — |
| Power Dissipation (Pd) at Tc | 157 W | — |
| Rds(on) Max at Vgs=10V | 2.44 mOhm | — |
| 封装 / 外壳 | PG-LHDSO-10-1 (SSO10T, 5x7 mm²) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Cooling | Top-side cooled | — |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 Extended Qualification |
| RoHS 状态 | Compliant | Compliant |
| Gate Threshold (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ] | — |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tj | — | 61 A |
| On-Resistance RDS(on) max at VGS=10V | — | 11.3 mΩ |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: gate-source voltage rating] |
| Power Dissipation (PD) at Tc | — | 88 W |
| 工作结温 | — | -55 °C to +175 °C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| 封装 | — | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled |
| MSL 等级 | — | MSL1 (260°C peak reflow) |
| Avalanche Rated | — | 100% Avalanche Tested |