IAUCN10S5L280DATMA1 vs IAUTN12S5N017ATMA1 Comparación
Comparación detallada lado a lado de IAUCN10S5L280DATMA1 por Infineon y IAUTN12S5N017ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
IAUCN10S5L280DATMA1 ✓ ActivoInfineon
IAUTN12S5N017ATMA1 - 120V 1.7mΩ N-Channel OptiMOS 5 MOSFET | Infineon
IAUTN12S5N017ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN10S5L280DATMA1 | IAUTN12S5N017ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,62 | $4,83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Configuration | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) at Tj | 23 A | — |
| Power Dissipation (Pd) at Tc | 38 W | — |
| Encapsulado | PG-TDSON-8-61 (SSO8) | PG-HSOF-8-1 (HSOF-8, surface mount) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualified | Yes (AEC-Q101, IAU prefix) | — |
| Technology | OptiMOS 5 Trench MOSFET | OptiMOS 5 trench MOSFET |
| Rango de temperatura de funcionamiento | -55C to +175C (junction) | -55 °C to +175 °C (junction) |
| Recuento de pines | 8 | — |
| Nivel MSL | 1 | 1 (per JEDEC J-STD-020, by package) |
| Estado RoHS | Compliant | Compliant (per distributor listings) |
| Packing | Tape & Reel (T&R) | — |
| Series | — | OptiMOS™ 5 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 120 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 314 A |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | — | 1.7 mΩ |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | 2.5 V typical (range per datasheet) |
| Gate Charge (Q<sub>g</sub>) | — | per datasheet curve (typ. ~150 nC class) |
| Maximum Junction Temperature | — | 175 °C |
| Mounting Position | — | Kelvin source pin (pin 2) for high-frequency layouts |
| Qualification | — | Automotive grade (per Infineon part page, AEC-Q101 expected for the family) |