IAUCN10S5L280DATMA1 vs IAUTN12S5N017ATMA1 Comparison

Detailed side-by-side comparison of IAUCN10S5L280DATMA1 by Infineon and IAUTN12S5N017ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUCN10S5L280DATMA1 IAUTN12S5N017ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Configuration Dual N-Channel MOSFET Array —
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) at Tj 23 A —
Power Dissipation (Pd) at Tc 38 W —
Package PG-TDSON-8-61 (SSO8) PG-HSOF-8-1 (HSOF-8, surface mount)
Mounting Type Surface Mount Surface Mount
Automotive Qualified Yes (AEC-Q101, IAU prefix) —
Technology OptiMOS 5 Trench MOSFET OptiMOS 5 trench MOSFET
Operating Temperature Range -55C to +175C (junction) -55 °C to +175 °C (junction)
Pin Count 8 —
MSL Level 1 1 (per JEDEC J-STD-020, by package)
RoHS Status Compliant Compliant (per distributor listings)
Packing Tape & Reel (T&R) —
Series — OptiMOS™ 5
FET Type — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 120 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) — 314 A
On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) — 1.7 mΩ
Gate Threshold Voltage (V<sub>GS(th)</sub>) — 2.5 V typical (range per datasheet)
Gate Charge (Q<sub>g</sub>) — per datasheet curve (typ. ~150 nC class)
Maximum Junction Temperature — 175 °C
Mounting Position — Kelvin source pin (pin 2) for high-frequency layouts
Qualification — Automotive grade (per Infineon part page, AEC-Q101 expected for the family)

Datasheets & Resources

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