IAUCN10S5L280DATMA1 vs IAUTN12S5N017ATMA1 비교
다음의 상세 나란히 비교: IAUCN10S5L280DATMA1 제조: Infineon 및 IAUTN12S5N017ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IAUTN12S5N017ATMA1 - 120V 1.7mΩ N-Channel OptiMOS 5 MOSFET | Infineon
IAUTN12S5N017ATMA1 ✓ 활성사양 비교
| 파라미터 | IAUCN10S5L280DATMA1 | IAUTN12S5N017ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.62 | $4.83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Configuration | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) at Tj | 23 A | — |
| Power Dissipation (Pd) at Tc | 38 W | — |
| 패키지 | PG-TDSON-8-61 (SSO8) | PG-HSOF-8-1 (HSOF-8, surface mount) |
| 실장 유형 | Surface Mount | Surface Mount |
| Automotive Qualified | Yes (AEC-Q101, IAU prefix) | — |
| Technology | OptiMOS 5 Trench MOSFET | OptiMOS 5 trench MOSFET |
| 동작 온도 범위 | -55C to +175C (junction) | -55 °C to +175 °C (junction) |
| 핀 수 | 8 | — |
| MSL 레벨 | 1 | 1 (per JEDEC J-STD-020, by package) |
| RoHS 상태 | Compliant | Compliant (per distributor listings) |
| Packing | Tape & Reel (T&R) | — |
| Series | — | OptiMOS™ 5 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 120 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 314 A |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | — | 1.7 mΩ |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | 2.5 V typical (range per datasheet) |
| Gate Charge (Q<sub>g</sub>) | — | per datasheet curve (typ. ~150 nC class) |
| Maximum Junction Temperature | — | 175 °C |
| Mounting Position | — | Kelvin source pin (pin 2) for high-frequency layouts |
| Qualification | — | Automotive grade (per Infineon part page, AEC-Q101 expected for the family) |