IPG20N10S436AATMA1 vs IPT015N10N5ATMA1 Comparación
Comparación detallada lado a lado de IPG20N10S436AATMA1 por Infineon y IPT015N10N5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPG20N10S436AATMA1 - Dual N-CH 100V 20A MOSFET Array | Infineon
IPG20N10S436AATMA1 ✓ ActivoInfineon
IPT015N10N5ATMA1 - 100V 300A 1.5mΩ OptiMOS 5 Power MOSFET | Infineon
IPT015N10N5ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPG20N10S436AATMA1 | IPT015N10N5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,68 | $2,78 |
| Configuration | Dual N-Channel (2 Elements with Built-in Diode) | Single |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 20 A (per channel) | — |
| Total Power Dissipation (PD) | 43 W | — |
| Operating Mode | Enhancement Mode | — |
| Encapsulado | PG-TDSON-8-10 (Wettable Flank) | PG-HSOF-8-1 (TOLL) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Operating Temperature (TJ max) | +175 C | — |
| JESD-609 Code | e3 | — |
| Nivel MSL | MSL1 (260 C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Tested | 100% | — |
| AOI Compatible | Yes (Wettable Flank) | — |
| Estado RoHS | Compliant (Green Product) | Compliant |
| Channel Type | N-Channel Normal Level | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPT015N10N5ATMA1 |
| Technology | — | OptiMOS™ 5 |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 300 A |
| On-Resistance RDS(on) Max | — | 1.5 mΩ |
| Power Dissipation (PD, Tc) | — | 375 W |
| Temperatura de funcionamiento | — | -55°C to +175°C |
| Gate Threshold VGS(th) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg at VGS=10V] |
| Output Capacitance (Coss) | — | Reduced up to 44% vs prior generation (per manufacturer claim) |
| RDS(on) Improvement vs Prior Generation | — | Up to 43% reduction |
| Packaging | — | Tape & Reel |