IPG20N10S436AATMA1 vs IPT015N10N5ATMA1 Comparison

Detailed side-by-side comparison of IPG20N10S436AATMA1 by Infineon and IPT015N10N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPG20N10S436AATMA1 IPT015N10N5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Configuration Dual N-Channel (2 Elements with Built-in Diode) Single
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 20 A (per channel) —
Total Power Dissipation (PD) 43 W —
Operating Mode Enhancement Mode —
Package PG-TDSON-8-10 (Wettable Flank) PG-HSOF-8-1 (TOLL)
Mounting Type Surface Mount Surface Mount
Operating Temperature (TJ max) +175 C —
JESD-609 Code e3 —
MSL Level MSL1 (260 C peak reflow) —
Automotive Qualification AEC-Q101 —
Avalanche Tested 100% —
AOI Compatible Yes (Wettable Flank) —
RoHS Status Compliant (Green Product) Compliant
Channel Type N-Channel Normal Level —
Manufacturer — Infineon Technologies
Part Number — IPT015N10N5ATMA1
Technology — OptiMOS™ 5
Transistor Type — N-Channel MOSFET
Drain-Source Voltage (VDS) Max — 100 V
Continuous Drain Current (ID, Tc) — 300 A
On-Resistance RDS(on) Max — 1.5 mΩ
Power Dissipation (PD, Tc) — 375 W
Operating Temperature — -55°C to +175°C
Gate Threshold VGS(th) — [DATA_NEEDED: VGS(th) typical and min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg at VGS=10V]
Output Capacitance (Coss) — Reduced up to 44% vs prior generation (per manufacturer claim)
RDS(on) Improvement vs Prior Generation — Up to 43% reduction
Packaging — Tape & Reel

Datasheets & Resources

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