IPG20N10S436AATMA1 vs IPT015N10N5ATMA1 비교
다음의 상세 나란히 비교: IPG20N10S436AATMA1 제조: Infineon 및 IPT015N10N5ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPG20N10S436AATMA1 | IPT015N10N5ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.68 | $2.78 |
| Configuration | Dual N-Channel (2 Elements with Built-in Diode) | Single |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 20 A (per channel) | — |
| Total Power Dissipation (PD) | 43 W | — |
| Operating Mode | Enhancement Mode | — |
| 패키지 | PG-TDSON-8-10 (Wettable Flank) | PG-HSOF-8-1 (TOLL) |
| 실장 유형 | Surface Mount | Surface Mount |
| Operating Temperature (TJ max) | +175 C | — |
| JESD-609 Code | e3 | — |
| MSL 레벨 | MSL1 (260 C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Tested | 100% | — |
| AOI Compatible | Yes (Wettable Flank) | — |
| RoHS 상태 | Compliant (Green Product) | Compliant |
| Channel Type | N-Channel Normal Level | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPT015N10N5ATMA1 |
| Technology | — | OptiMOS™ 5 |
| 트랜지스터 유형 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 300 A |
| On-Resistance RDS(on) Max | — | 1.5 mΩ |
| Power Dissipation (PD, Tc) | — | 375 W |
| 동작 온도 | — | -55°C to +175°C |
| Gate Threshold VGS(th) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg at VGS=10V] |
| Output Capacitance (Coss) | — | Reduced up to 44% vs prior generation (per manufacturer claim) |
| RDS(on) Improvement vs Prior Generation | — | Up to 43% reduction |
| Packaging | — | Tape & Reel |