IRF1018EPBF vs IRFS7430TRL7PP Comparación
Comparación detallada lado a lado de IRF1018EPBF por Infineon y IRFS7430TRL7PP por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF1018EPBF | IRFS7430TRL7PP |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,38 | $3,15 |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (Power MOSFET) | — |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) at Tc=25C | 79 A | — |
| Rds(on) max at Vgs=10V | 8.4 mOhm | — |
| Total Gate Charge (Qg) | 46 nC | — |
| Gate Drive Voltage (Vgs) | 10 V (optimized; +/-20 V max) | — |
| Power Dissipation (Pd) at Tc=25C | 110 W | — |
| Rango de temperatura de funcionamiento | -55 C to +175 C (Tj) | — |
| Encapsulado | TO-220AB (through-hole, 3-lead) | D2PAK (TO-263-7), 7 leads + tab |
| Tipo de montaje | Through Hole | Surface Mount |
| Qualification | JEDEC (Industrial market) | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free (PBF suffix) | Yes | — |
| Recuento de pines | 3 (Gate, Drain, Source) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | StrongIRFET |
| Series | — | HEXFET |
| Drain-to-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D, Tc=25°C) | — | 240 A |
| Continuous Drain Current (I_D, Tc=100°C) | — | [DATA_NEEDED: ID at Tc=100°C] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: IDM pulse spec] |
| R_DS(on) max (V_GS=10V) | — | 1.2 mΩ (per family datasheet); 0.75 mΩ typical |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | — | 2.0 V to 3.5 V |
| Total Gate Charge (Q_g) | — | 305 nC |
| Power Dissipation (P_D, Tc=25°C) | — | 375 W |
| Temperatura de unión de funcionamiento | — | -55°C to +175°C |
| Single Pulse Avalanche Energy (E_AS) | — | 1454 mJ (per cross-reference test L=1mH) |
| Nivel MSL | — | MSL1 (per PartGenie) |