IRF1018EPBF vs IRFS7430TRL7PP 비교
다음의 상세 나란히 비교: IRF1018EPBF 제조: Infineon 및 IRFS7430TRL7PP 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF1018EPBF | IRFS7430TRL7PP |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.38 | $3.15 |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (Power MOSFET) | — |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) at Tc=25C | 79 A | — |
| Rds(on) max at Vgs=10V | 8.4 mOhm | — |
| Total Gate Charge (Qg) | 46 nC | — |
| Gate Drive Voltage (Vgs) | 10 V (optimized; +/-20 V max) | — |
| Power Dissipation (Pd) at Tc=25C | 110 W | — |
| 동작 온도 범위 | -55 C to +175 C (Tj) | — |
| 패키지 | TO-220AB (through-hole, 3-lead) | D2PAK (TO-263-7), 7 leads + tab |
| 실장 유형 | Through Hole | Surface Mount |
| Qualification | JEDEC (Industrial market) | — |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free (PBF suffix) | Yes | — |
| 핀 수 | 3 (Gate, Drain, Source) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | StrongIRFET |
| Series | — | HEXFET |
| Drain-to-Source Voltage (V_DSS) | — | 40 V |
| Continuous Drain Current (I_D, Tc=25°C) | — | 240 A |
| Continuous Drain Current (I_D, Tc=100°C) | — | [DATA_NEEDED: ID at Tc=100°C] |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: IDM pulse spec] |
| R_DS(on) max (V_GS=10V) | — | 1.2 mΩ (per family datasheet); 0.75 mΩ typical |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | — | 2.0 V to 3.5 V |
| Total Gate Charge (Q_g) | — | 305 nC |
| Power Dissipation (P_D, Tc=25°C) | — | 375 W |
| 동작 접합 온도 | — | -55°C to +175°C |
| Single Pulse Avalanche Energy (E_AS) | — | 1454 mJ (per cross-reference test L=1mH) |
| MSL 레벨 | — | MSL1 (per PartGenie) |