IRF1018EPBF vs IRFS7430TRL7PP Comparison
Detailed side-by-side comparison of IRF1018EPBF by Infineon and IRFS7430TRL7PP by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFS7430TRL7PP - 40V 240A StrongIRFET N-Channel MOSFET | Infineon
IRFS7430TRL7PP β ActiveSpecification Comparison
| Parameter | IRF1018EPBF | IRFS7430TRL7PP |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $3.15 |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (Power MOSFET) | β |
| Drain-Source Voltage (Vdss) | 60 V | β |
| Continuous Drain Current (Id) at Tc=25C | 79 A | β |
| Rds(on) max at Vgs=10V | 8.4 mOhm | β |
| Total Gate Charge (Qg) | 46 nC | β |
| Gate Drive Voltage (Vgs) | 10 V (optimized; +/-20 V max) | β |
| Power Dissipation (Pd) at Tc=25C | 110 W | β |
| Operating Temperature Range | -55 C to +175 C (Tj) | β |
| Package | TO-220AB (through-hole, 3-lead) | D2PAK (TO-263-7), 7 leads + tab |
| Mounting Type | Through Hole | Surface Mount |
| Qualification | JEDEC (Industrial market) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free (PBF suffix) | Yes | β |
| Pin Count | 3 (Gate, Drain, Source) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | StrongIRFET |
| Series | β | HEXFET |
| Drain-to-Source Voltage (V_DSS) | β | 40 V |
| Continuous Drain Current (I_D, Tc=25Β°C) | β | 240 A |
| Continuous Drain Current (I_D, Tc=100Β°C) | β | [DATA_NEEDED: ID at Tc=100Β°C] |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: IDM pulse spec] |
| R_DS(on) max (V_GS=10V) | β | 1.2 mΞ© (per family datasheet); 0.75 mΞ© typical |
| Gate-Source Voltage (V_GS) max | β | Β±20 V |
| Gate Threshold Voltage (V_GS(th)) | β | 2.0 V to 3.5 V |
| Total Gate Charge (Q_g) | β | 305 nC |
| Power Dissipation (P_D, Tc=25Β°C) | β | 375 W |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| Single Pulse Avalanche Energy (E_AS) | β | 1454 mJ (per cross-reference test L=1mH) |
| MSL Level | β | MSL1 (per PartGenie) |