IRF7309TRPBF vs IRF7319TRPBF Comparación
Comparación detallada lado a lado de IRF7309TRPBF por Infineon y IRF7319TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF7309TRPBF | IRF7319TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,35 | $0,62 |
| Configuration | Dual N-Channel + P-Channel (Complementary) | N-Channel + P-Channel (complementary half-bridge) |
| Polarity | N+P | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (N-channel, TA=25C) | 4 A | — |
| Continuous Drain Current (P-channel, TA=25C) | 3 A | — |
| On-Resistance (N-channel, max) | 50 mOhm | — |
| On-Resistance (P-channel, max) | [DATA_NEEDED: RDS(on) P-channel value] | — |
| Power Dissipation (TA=25C) | 1.4 W | — |
| Technology | IR HEXFET Generation V | IR MOSFET / Fifth Generation HEXFET |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | [DATA_NEEDED: VGS(th) typ/min/max] |
| Rango de temperatura de funcionamiento | -55C to +150C (TJ) | -55C to +150C (junction) |
| Encapsulado | 8-SO (SOIC-8) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL-1 (unlimited floor life per JEDEC J-STD-020) | — |
| Lead-Free Status | Yes (TRPBF suffix = Pb-free) | — |
| Estado RoHS | Compliant | — |
| Packaging | Tape & Reel | Tape & Reel (TR suffix) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Product Type | — | Dual MOSFET Array (N-channel + P-channel) |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current N-channel (ID) | — | 6.5 A |
| Continuous Drain Current P-channel (ID) | — | 4.9 A |
| RDS(on) Max N-channel | — | 29 mOhm (per Infineon product page) |
| RDS(on) Max P-channel | — | [DATA_NEEDED: P-channel RDS(on) max] |
| Total Power Dissipation (PD) | — | 2 W |
| Thermal Resistance Junction-to-Ambient N-ch | — | 120 C/W (steady state) |
| Thermal Resistance Junction-to-Ambient P-ch | — | 110 C/W (steady state) |
| Package Type | — | 8-SOIC (SO-8) |
| Lead-Free / RoHS | — | Yes (PBF suffix = Pb-free) |