IRF7309TRPBF vs IRF7319TRPBF 比較

詳細な並列比較: IRF7309TRPBF メーカー: Infineon および IRF7319TRPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

仕様比較

パラメータ IRF7309TRPBF IRF7319TRPBF
ブランド Infineon Infineon
カテゴリ MOSFETs MOSFETs
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $0.35 $0.62
Configuration Dual N-Channel + P-Channel (Complementary) N-Channel + P-Channel (complementary half-bridge)
Polarity N+P —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (N-channel, TA=25C) 4 A —
Continuous Drain Current (P-channel, TA=25C) 3 A —
On-Resistance (N-channel, max) 50 mOhm —
On-Resistance (P-channel, max) [DATA_NEEDED: RDS(on) P-channel value] —
Power Dissipation (TA=25C) 1.4 W —
Technology IR HEXFET Generation V IR MOSFET / Fifth Generation HEXFET
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] [DATA_NEEDED: VGS(th) typ/min/max]
動作温度範囲 -55C to +150C (TJ) -55C to +150C (junction)
パッケージ 8-SO (SOIC-8) —
実装タイプ Surface Mount Surface Mount
MSLレベル MSL-1 (unlimited floor life per JEDEC J-STD-020) —
Lead-Free Status Yes (TRPBF suffix = Pb-free) —
RoHS ステータス Compliant —
Packaging Tape & Reel Tape & Reel (TR suffix)
Manufacturer — Infineon Technologies (formerly International Rectifier)
Product Type — Dual MOSFET Array (N-channel + P-channel)
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current N-channel (ID) — 6.5 A
Continuous Drain Current P-channel (ID) — 4.9 A
RDS(on) Max N-channel — 29 mOhm (per Infineon product page)
RDS(on) Max P-channel — [DATA_NEEDED: P-channel RDS(on) max]
Total Power Dissipation (PD) — 2 W
Thermal Resistance Junction-to-Ambient N-ch — 120 C/W (steady state)
Thermal Resistance Junction-to-Ambient P-ch — 110 C/W (steady state)
Package Type — 8-SOIC (SO-8)
Lead-Free / RoHS — Yes (PBF suffix = Pb-free)

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