IRF7309TRPBF vs IRF7319TRPBF Comparaison
Comparaison détaillée côte à côte de IRF7309TRPBF par Infineon et IRF7319TRPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRF7309TRPBF | IRF7319TRPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,35 | $0,62 |
| Configuration | Dual N-Channel + P-Channel (Complementary) | N-Channel + P-Channel (complementary half-bridge) |
| Polarity | N+P | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (N-channel, TA=25C) | 4 A | — |
| Continuous Drain Current (P-channel, TA=25C) | 3 A | — |
| On-Resistance (N-channel, max) | 50 mOhm | — |
| On-Resistance (P-channel, max) | [DATA_NEEDED: RDS(on) P-channel value] | — |
| Power Dissipation (TA=25C) | 1.4 W | — |
| Technology | IR HEXFET Generation V | IR MOSFET / Fifth Generation HEXFET |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | [DATA_NEEDED: VGS(th) typ/min/max] |
| Plage de température de fonctionnement | -55C to +150C (TJ) | -55C to +150C (junction) |
| Boîtier | 8-SO (SOIC-8) | — |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | MSL-1 (unlimited floor life per JEDEC J-STD-020) | — |
| Lead-Free Status | Yes (TRPBF suffix = Pb-free) | — |
| Statut RoHS | Compliant | — |
| Packaging | Tape & Reel | Tape & Reel (TR suffix) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Product Type | — | Dual MOSFET Array (N-channel + P-channel) |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current N-channel (ID) | — | 6.5 A |
| Continuous Drain Current P-channel (ID) | — | 4.9 A |
| RDS(on) Max N-channel | — | 29 mOhm (per Infineon product page) |
| RDS(on) Max P-channel | — | [DATA_NEEDED: P-channel RDS(on) max] |
| Total Power Dissipation (PD) | — | 2 W |
| Thermal Resistance Junction-to-Ambient N-ch | — | 120 C/W (steady state) |
| Thermal Resistance Junction-to-Ambient P-ch | — | 110 C/W (steady state) |
| Package Type | — | 8-SOIC (SO-8) |
| Lead-Free / RoHS | — | Yes (PBF suffix = Pb-free) |