IRF7309TRPBF vs IRF7319TRPBF Comparison
Detailed side-by-side comparison of IRF7309TRPBF by Infineon and IRF7319TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF7309TRPBF | IRF7319TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.35 | $0.62 |
| Configuration | Dual N-Channel + P-Channel (Complementary) | N-Channel + P-Channel (complementary half-bridge) |
| Polarity | N+P | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (N-channel, TA=25C) | 4 A | β |
| Continuous Drain Current (P-channel, TA=25C) | 3 A | β |
| On-Resistance (N-channel, max) | 50 mOhm | β |
| On-Resistance (P-channel, max) | [DATA_NEEDED: RDS(on) P-channel value] | β |
| Power Dissipation (TA=25C) | 1.4 W | β |
| Technology | IR HEXFET Generation V | IR MOSFET / Fifth Generation HEXFET |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | [DATA_NEEDED: VGS(th) typ/min/max] |
| Operating Temperature Range | -55C to +150C (TJ) | -55C to +150C (junction) |
| Package | 8-SO (SOIC-8) | β |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL-1 (unlimited floor life per JEDEC J-STD-020) | β |
| Lead-Free Status | Yes (TRPBF suffix = Pb-free) | β |
| RoHS Status | Compliant | β |
| Packaging | Tape & Reel | Tape & Reel (TR suffix) |
| Manufacturer | β | Infineon Technologies (formerly International Rectifier) |
| Product Type | β | Dual MOSFET Array (N-channel + P-channel) |
| Drain-to-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current N-channel (ID) | β | 6.5 A |
| Continuous Drain Current P-channel (ID) | β | 4.9 A |
| RDS(on) Max N-channel | β | 29 mOhm (per Infineon product page) |
| RDS(on) Max P-channel | β | [DATA_NEEDED: P-channel RDS(on) max] |
| Total Power Dissipation (PD) | β | 2 W |
| Thermal Resistance Junction-to-Ambient N-ch | β | 120 C/W (steady state) |
| Thermal Resistance Junction-to-Ambient P-ch | β | 110 C/W (steady state) |
| Package Type | β | 8-SOIC (SO-8) |
| Lead-Free / RoHS | β | Yes (PBF suffix = Pb-free) |