IRF7309TRPBF vs IRF7319TRPBF 비교

다음의 상세 나란히 비교: IRF7309TRPBF 제조: Infineon 및 IRF7319TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRF7309TRPBF IRF7319TRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.35 $0.62
Configuration Dual N-Channel + P-Channel (Complementary) N-Channel + P-Channel (complementary half-bridge)
Polarity N+P —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (N-channel, TA=25C) 4 A —
Continuous Drain Current (P-channel, TA=25C) 3 A —
On-Resistance (N-channel, max) 50 mOhm —
On-Resistance (P-channel, max) [DATA_NEEDED: RDS(on) P-channel value] —
Power Dissipation (TA=25C) 1.4 W —
Technology IR HEXFET Generation V IR MOSFET / Fifth Generation HEXFET
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] [DATA_NEEDED: VGS(th) typ/min/max]
동작 온도 범위 -55C to +150C (TJ) -55C to +150C (junction)
패키지 8-SO (SOIC-8) —
실장 유형 Surface Mount Surface Mount
MSL 레벨 MSL-1 (unlimited floor life per JEDEC J-STD-020) —
Lead-Free Status Yes (TRPBF suffix = Pb-free) —
RoHS 상태 Compliant —
Packaging Tape & Reel Tape & Reel (TR suffix)
Manufacturer — Infineon Technologies (formerly International Rectifier)
Product Type — Dual MOSFET Array (N-channel + P-channel)
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current N-channel (ID) — 6.5 A
Continuous Drain Current P-channel (ID) — 4.9 A
RDS(on) Max N-channel — 29 mOhm (per Infineon product page)
RDS(on) Max P-channel — [DATA_NEEDED: P-channel RDS(on) max]
Total Power Dissipation (PD) — 2 W
Thermal Resistance Junction-to-Ambient N-ch — 120 C/W (steady state)
Thermal Resistance Junction-to-Ambient P-ch — 110 C/W (steady state)
Package Type — 8-SOIC (SO-8)
Lead-Free / RoHS — Yes (PBF suffix = Pb-free)

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